KSK595H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSK595H
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 1.5 V
|Id|ⓘ - Corriente continua de drenaje: 1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de KSK595H MOSFET
KSK595H Datasheet (PDF)
ksk595h.pdf

KSK595HCapacitor Microphone Applications Especially Suited for use in Audio, Telephone Capacitor Microphones3 Excellent Voltage Characteristic Excellent Transient Characteristic2SOT-231 1.Drain 2. Source 3. GateSi N-channel Junction FETAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVGDO Gate-Drain Voltage -20 VIG Gate
ksk596.pdf

KSK596Capacitor Microphone Applications Especially Suited for use in Audio, Telephone Capacitor Microphones Excellent Voltage Characteristic Excellent Transient CharacteristicTO-92S11.Source 2. Gate 3. DrainSi N-channel Junction FETAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVGDO Gate-Drain Voltage -20 VIG Gate Current
Otros transistores... MMBFJ210 , MMBFJ211 , MMBFJ212 , J270 , J271 , J304 , J305 , KSK30 , 10N60 , KSK596 , LS4117 , LS4118 , LS4119 , MMBF4091 , MMBF4092 , MMBF4093 , PN4091 .
History: FXN30S55C | APQ14SN65AH | SIZ300DT | FMP36-015P | IRFI9Z24GPBF | QM3001S
History: FXN30S55C | APQ14SN65AH | SIZ300DT | FMP36-015P | IRFI9Z24GPBF | QM3001S



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