KSK595H Todos los transistores

 

KSK595H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSK595H

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.1 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 1.5 V

Corriente continua de drenaje (Id): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Empaquetado / Estuche: SOT-23

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KSK595H Datasheet (PDF)

1.1. ksk595h.pdf Size:64K _fairchild_semi

KSK595H
KSK595H

KSK595H Capacitor Microphone Applications Especially Suited for use in Audio, Telephone Capacitor Microphones 3 Excellent Voltage Characteristic Excellent Transient Characteristic 2 SOT-23 1 1.Drain 2. Source 3. Gate Si N-channel Junction FET Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VGDO Gate-Drain Voltage -20 V IG Gate Current 10

5.1. ksk596.pdf Size:46K _fairchild_semi

KSK595H
KSK595H

KSK596 Capacitor Microphone Applications Especially Suited for use in Audio, Telephone Capacitor Microphones Excellent Voltage Characteristic Excellent Transient Characteristic TO-92S 1 1.Source 2. Gate 3. Drain Si N-channel Junction FET Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VGDO Gate-Drain Voltage -20 V IG Gate Current 10 mA ID

Otros transistores... IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 
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