KSK595H Datasheet and Replacement
Type Designator: KSK595H
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 1.5 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Package: SOT-23
KSK595H substitution
KSK595H Datasheet (PDF)
ksk595h.pdf

KSK595HCapacitor Microphone Applications Especially Suited for use in Audio, Telephone Capacitor Microphones3 Excellent Voltage Characteristic Excellent Transient Characteristic2SOT-231 1.Drain 2. Source 3. GateSi N-channel Junction FETAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVGDO Gate-Drain Voltage -20 VIG Gate
ksk596.pdf

KSK596Capacitor Microphone Applications Especially Suited for use in Audio, Telephone Capacitor Microphones Excellent Voltage Characteristic Excellent Transient CharacteristicTO-92S11.Source 2. Gate 3. DrainSi N-channel Junction FETAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVGDO Gate-Drain Voltage -20 VIG Gate Current
Datasheet: MMBFJ210 , MMBFJ211 , MMBFJ212 , J270 , J271 , J304 , J305 , KSK30 , 10N60 , KSK596 , LS4117 , LS4118 , LS4119 , MMBF4091 , MMBF4092 , MMBF4093 , PN4091 .
History: FDBL0120N40 | MMBF5458 | 2N7002WT1 | FCU850N80Z | RF1S45N06LESM | CS4N65 | MMBF5434
Keywords - KSK595H MOSFET datasheet
KSK595H cross reference
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History: FDBL0120N40 | MMBF5458 | 2N7002WT1 | FCU850N80Z | RF1S45N06LESM | CS4N65 | MMBF5434



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