MPF102 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MPF102
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 7.5 V
   |Id|ⓘ - Corriente continua de drenaje: 0.02 A
   Tjⓘ - Temperatura máxima de unión: 155 °C

CARACTERÍSTICAS ELÉCTRICAS

Paquete / Cubierta: TO-92

Búsqueda de reemplazo de MOSFET MPF102

MPF102 Datasheet (PDF)

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mpf102.pdf

MPF102N-Channel RF Amplifier This device is designed for electronic switching applications such as low ON resistance analog switching. Sourced from process 50.TO-9211. Drain 2. Source 3. GateAbsolute Maximum Ratings * Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 25 VVGS Gate-Source Voltage -25 VIGF Forward Gate Current 10 mATJ

..2. Size:146K onsemi
mpf102.pdf

MPF102Preferred DevicesJFET VHF AmplifierN-Channel - DepletionFeatures Pb-Free Package is Available*http://onsemi.com1 DRAINMAXIMUM RATINGSRating Symbol Value Unit3Drain-Source Voltage VDS 25 VdcGATEDrain-Gate Voltage VDG 25 VdcGate-Source Voltage VGS -25 Vdc2 SOURCEGate Current IG 10 mAdcTotal Device Dissipation PD@ TA = 25C 350 mWDerate above 25C 2

0.1. Size:270K motorola
mpf102rev0d.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPF102/DJFET VHF AmplifierNChannel DepletionMPF1021 DRAIN3GATE2 SOURCEMAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDS 25 Vdc123DrainGate Voltage VDG 25 VdcGateSource Voltage VGS 25 VdcCASE 2904, STYLE 5Gate Current IG 10 mAdc TO92 (TO226AA)Total Device D

9.1. Size:609K trinnotech
tmp10n80 tmpf10n80.pdf

TMP10N80/TMPF10N80 TMP10N80G/TMPF10N80G VDSS = 880 V @Tjmax Features ID = 9.5A Low gate charge RDS(ON) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N80 / TMPF10N80 TO-220 / TO-220F TMP10N80 / TMPF10N80 RoHS TMP10N

9.2. Size:609K trinnotech
tmp10n60a tmpf10n60a.pdf

TMP10N60A(G)/TMPF10N60A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 10A

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TMP10N60/TMPF10N60TMP10N60G/TMPF10N60GVDSS = 660 V @TjmaxFeaturesID = 10A Low gate chargeRDS(on) = 0.75 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP10N60 / TMPF10N60 TO-220 / TO-220F TMP10N60 / TMPF10N60 RoHSTMP10N60G / TMPF10N60G

9.4. Size:577K trinnotech
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TMP10N65/TMPF10N65 TMP10N65G/TMPF10N65G VDSS = 715 V @Tjmax Features ID = 9.5A Low gate charge RDS(on) = 0.98 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N65 / TMPF10N65 TO-220 / TO-220F TMP10N65 / TMPF10N65 RoHS TMP10N

9.5. Size:607K trinnotech
tmp10n65a tmpf10n65a.pdf