MPF102 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MPF102
Тип транзистора: JFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.35 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 7.5 V
|Vgs(off)|ⓘ - Минимальное напряжение отсечки: 8 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.02 A
Tjⓘ - Максимальная температура канала: 155 °C
Тип корпуса: TO-92
MPF102 Datasheet (PDF)
mpf102.pdf
MPF102N-Channel RF Amplifier This device is designed for electronic switching applications such as low ON resistance analog switching. Sourced from process 50.TO-9211. Drain 2. Source 3. GateAbsolute Maximum Ratings * Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 25 VVGS Gate-Source Voltage -25 VIGF Forward Gate Current 10 mATJ
mpf102.pdf
MPF102Preferred DevicesJFET VHF AmplifierN-Channel - DepletionFeatures Pb-Free Package is Available*http://onsemi.com1 DRAINMAXIMUM RATINGSRating Symbol Value Unit3Drain-Source Voltage VDS 25 VdcGATEDrain-Gate Voltage VDG 25 VdcGate-Source Voltage VGS -25 Vdc2 SOURCEGate Current IG 10 mAdcTotal Device Dissipation PD@ TA = 25C 350 mWDerate above 25C 2
mpf102rev0d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPF102/DJFET VHF AmplifierNChannel DepletionMPF1021 DRAIN3GATE2 SOURCEMAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDS 25 Vdc123DrainGate Voltage VDG 25 VdcGateSource Voltage VGS 25 VdcCASE 2904, STYLE 5Gate Current IG 10 mAdc TO92 (TO226AA)Total Device D
tmp10n80 tmpf10n80.pdf
TMP10N80/TMPF10N80 TMP10N80G/TMPF10N80G VDSS = 880 V @Tjmax Features ID = 9.5A Low gate charge RDS(ON) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N80 / TMPF10N80 TO-220 / TO-220F TMP10N80 / TMPF10N80 RoHS TMP10N
tmp10n60a tmpf10n60a.pdf
TMP10N60A(G)/TMPF10N60A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 10A
tmp10n60 tmpf10n60.pdf
TMP10N60/TMPF10N60TMP10N60G/TMPF10N60GVDSS = 660 V @TjmaxFeaturesID = 10A Low gate chargeRDS(on) = 0.75 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP10N60 / TMPF10N60 TO-220 / TO-220F TMP10N60 / TMPF10N60 RoHSTMP10N60G / TMPF10N60G
tmp10n65 tmpf10n65.pdf
TMP10N65/TMPF10N65 TMP10N65G/TMPF10N65G VDSS = 715 V @Tjmax Features ID = 9.5A Low gate charge RDS(on) = 0.98 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N65 / TMPF10N65 TO-220 / TO-220F TMP10N65 / TMPF10N65 RoHS TMP10N
tmp10n65a tmpf10n65a.pdf
TMP10N65A(G)/TMPF10N65A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 9.5A
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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