MPF102 - описание и поиск аналогов

MPF102 N-Channel RF Amplifier This device is designed for electronic switching applications such as low ON resistance analog switching. Sourced from process 50. TO-92 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * Ta=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V IGF Forward Gate Current 10 mA TJ

MPF102 Preferred Devices JFET VHF Amplifier N-Channel - Depletion Features Pb-Free Package is Available* http //onsemi.com 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain-Source Voltage VDS 25 Vdc GATE Drain-Gate Voltage VDG 25 Vdc Gate-Source Voltage VGS -25 Vdc 2 SOURCE Gate Current IG 10 mAdc Total Device Dissipation PD @ TA = 25 C 350 mW Derate above 25 C 2

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPF102/D JFET VHF Amplifier N Channel Depletion MPF102 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc 1 2 3 Drain Gate Voltage VDG 25 Vdc Gate Source Voltage VGS 25 Vdc CASE 29 04, STYLE 5 Gate Current IG 10 mAdc TO 92 (TO 226AA) Total Device D

TMP10N80/TMPF10N80 TMP10N80G/TMPF10N80G VDSS = 880 V @Tjmax Features ID = 9.5A Low gate charge RDS(ON) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N80 / TMPF10N80 TO-220 / TO-220F TMP10N80 / TMPF10N80 RoHS TMP10N

TMP10N60A(G)/TMPF10N60A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 10A

TMP10N60/TMPF10N60 TMP10N60G/TMPF10N60G VDSS = 660 V @Tjmax Features ID = 10A Low gate charge RDS(on) = 0.75 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N60 / TMPF10N60 TO-220 / TO-220F TMP10N60 / TMPF10N60 RoHS TMP10N60G / TMPF10N60G

TMP10N65/TMPF10N65 TMP10N65G/TMPF10N65G VDSS = 715 V @Tjmax Features ID = 9.5A Low gate charge RDS(on) = 0.98 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N65 / TMPF10N65 TO-220 / TO-220F TMP10N65 / TMPF10N65 RoHS TMP10N

TMP10N65A(G)/TMPF10N65A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 9.5A

JMPF10N65BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 650V, 10A Load Switch RDS(ON)

JMPF10N60BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 600V, 10A Load Switch RDS(ON)

Silicon N-Channel Power MOSFET Description The MPF10N65 uses advanced trench technology and design to provide excellent RDS(ON)with low gate charge. It can be used in a wide variety of applications. General Features VDS=10A ID=650V Schematic diagram RDS(on)(typ)=0.6 @VGS=10V,ID=4.0A Low Crss 18.5pF@25V Fast switching Improved dv/dt capability Application