PN4303 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PN4303
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.625 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 6 V
   |Id|ⓘ - Corriente continua de drenaje: 0.01 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Paquete / Cubierta: TO-92

Búsqueda de reemplazo de MOSFET PN4303

PN4303 Datasheet (PDF)

..1. Size:27K fairchild semi
pn4303.pdf

PN4303N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from process 52.TO-9211. Drain 2. Source 3. GateAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIG

9.1. Size:27K fairchild semi
pn4302.pdf

PN4302N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from process 52.TO-9211. Drain 2. Source 3. GateAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIG

9.2. Size:48K fairchild semi
fpn430.pdf

FPN430FPN430ATO-226CBEPNP Low Saturation TransistorThese devices are designed for high current gain and lowsaturation voltage with collector currents up to 2.0 A continuous.Sourced from Process PB.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 35 VVEBO Emitter-Base

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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