PN4303 Todos los transistores

 

PN4303 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PN4303

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.625 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 6 V

|Id|ⓘ - Corriente continua de drenaje: 0.01 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Encapsulados: TO-92

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PN4303 datasheet

 ..1. Size:27K  fairchild semi
pn4303.pdf pdf_icon

PN4303

PN4303 N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from process 52. TO-92 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IG

 9.1. Size:27K  fairchild semi
pn4302.pdf pdf_icon

PN4303

PN4302 N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from process 52. TO-92 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IG

 9.2. Size:48K  fairchild semi
fpn430.pdf pdf_icon

PN4303

FPN430 FPN430A TO-226 C B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 2.0 A continuous. Sourced from Process PB. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 35 V VEBO Emitter-Base

Otros transistores... P1087 , STP11NB40 , STP11NB40FP , STP9NB50 , STP9NB50FP , PF5102 , PF5103 , PN4302 , IRFP250 , PN4861 , PN5432 , PN5433 , PN5434 , TIS73 , TIS74 , TIS75 , U1898 .

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History: PN4302

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