PN4303 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PN4303
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.625 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 6 V
|Id|ⓘ - Corriente continua de drenaje: 0.01 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Encapsulados: TO-92
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PN4303 datasheet
pn4303.pdf
PN4303 N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from process 52. TO-92 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IG
pn4302.pdf
PN4302 N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from process 52. TO-92 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IG
fpn430.pdf
FPN430 FPN430A TO-226 C B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 2.0 A continuous. Sourced from Process PB. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 35 V VEBO Emitter-Base
Otros transistores... P1087 , STP11NB40 , STP11NB40FP , STP9NB50 , STP9NB50FP , PF5102 , PF5103 , PN4302 , IRFP250 , PN4861 , PN5432 , PN5433 , PN5434 , TIS73 , TIS74 , TIS75 , U1898 .
History: PN4302
History: PN4302
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