PN4303
MOSFET. Datasheet pdf. Equivalent
Type Designator: PN4303
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.625
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 6
V
|Id|ⓘ - Maximum Drain Current: 0.01
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Package:
TO-92
PN4303
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PN4303
Datasheet (PDF)
..1. Size:27K fairchild semi
pn4303.pdf 
PN4303N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from process 52.TO-9211. Drain 2. Source 3. GateAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIG
9.1. Size:27K fairchild semi
pn4302.pdf
PN4302N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from process 52.TO-9211. Drain 2. Source 3. GateAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIG
9.2. Size:48K fairchild semi
fpn430.pdf
FPN430FPN430ATO-226CBEPNP Low Saturation TransistorThese devices are designed for high current gain and lowsaturation voltage with collector currents up to 2.0 A continuous.Sourced from Process PB.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 35 VVEBO Emitter-Base
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