All MOSFET. PN4303 Datasheet

 

PN4303 Datasheet and Replacement


   Type Designator: PN4303
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 6 V
   |Id| ⓘ - Maximum Drain Current: 0.01 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Package: TO-92
 

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PN4303 Datasheet (PDF)

 ..1. Size:27K  fairchild semi
pn4303.pdf pdf_icon

PN4303

PN4303N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from process 52.TO-9211. Drain 2. Source 3. GateAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIG

 9.1. Size:27K  fairchild semi
pn4302.pdf pdf_icon

PN4303

PN4302N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from process 52.TO-9211. Drain 2. Source 3. GateAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIG

 9.2. Size:48K  fairchild semi
fpn430.pdf pdf_icon

PN4303

FPN430FPN430ATO-226CBEPNP Low Saturation TransistorThese devices are designed for high current gain and lowsaturation voltage with collector currents up to 2.0 A continuous.Sourced from Process PB.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 35 VVEBO Emitter-Base

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History: UTT50P10

Keywords - PN4303 MOSFET datasheet

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