SUN0550F Todos los transistores

 

SUN0550F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SUN0550F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 29 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 26 nS

Cossⓘ - Capacitancia de salida: 65 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm

Encapsulados: TO-220F

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SUN0550F datasheet

 ..1. Size:371K  auk
sun0550f.pdf pdf_icon

SUN0550F

SUN0550F Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance RDS(on)=1.23 (Typ.) Low gate charge Qg=10.5nC (Typ.) Low reverse transfer capacitance Crss=2pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN0550F SUN0550 TO-220F

 7.1. Size:304K  auk
sun0550d.pdf pdf_icon

SUN0550F

SUN0550D Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance RDS(on)=1.23 (Typ.) Low gate charge Qg=10.5nC (Typ.) D Low reverse transfer capacitance Crss=2pF (Typ.) Halogen free device and RoHS compliant device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252

 9.1. Size:680K  auk
sun05a25f.pdf pdf_icon

SUN0550F

SUN05A25F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance R =0.92 (Typ.) DS(on) Low gate charge Q =6nC (Typ.) g Low reverse transfer capacitance C =5pF (Typ.) rss RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN05A25F SU

 9.2. Size:603K  auk
sun05a50zd.pdf pdf_icon

SUN0550F

SUN05A50ZD New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance R =1.23 (Typ.) DS(on) D Low gate charge Q =17.5nC (Typ.) g Low reverse transfer capacitance C =5pF (Typ.) rss Built-in ESD Diode 100% avalanche tested G S Ordering Information TO-252 Part Number Marking Package SUN05A50ZD

Otros transistores... SUN0260D , SUN0260F , SUN0460D , SUN0460F , SUN0460I2 , SUN0465F , SUN0465I2 , SUN0550D , AO3400A , SUN0760F , SUN0760I2 , SUN0765F , SUN0765I2 , SUN1060F , SUN1060I2 , 2N7002B , 2N7002KU .

History: 2SK1014 | BRFL24N50 | SUD50N04-05L | 4N60L-TND-R | AOTF7S65 | JMH70R430AK | YTF830

 

 

 

 

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