SUN0550F
MOSFET. Datasheet pdf. Equivalent
Type Designator: SUN0550F
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 29
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 4.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10.5
nC
trⓘ - Rise Time: 26
nS
Cossⓘ -
Output Capacitance: 65
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5
Ohm
Package:
TO-220F
SUN0550F
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SUN0550F
Datasheet (PDF)
..1. Size:371K auk
sun0550f.pdf 
SUN0550F Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=1.23 (Typ.) Low gate charge: Qg=10.5nC (Typ.) Low reverse transfer capacitance: Crss=2pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN0550F SUN0550 TO-220F
7.1. Size:304K auk
sun0550d.pdf
SUN0550D Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=1.23 (Typ.) Low gate charge: Qg=10.5nC (Typ.) D Low reverse transfer capacitance: Crss=2pF (Typ.) Halogen free device and RoHS compliant device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252
9.1. Size:680K auk
sun05a25f.pdf
SUN05A25F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =0.92 (Typ.) DS(on) Low gate charge: Q =6nC (Typ.) g Low reverse transfer capacitance: C =5pF (Typ.) rss RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN05A25F SU
9.2. Size:603K auk
sun05a50zd.pdf
SUN05A50ZD New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =1.23 (Typ.) DS(on)D Low gate charge: Q =17.5nC (Typ.) g Low reverse transfer capacitance: C =5pF (Typ.) rss Built-in ESD Diode 100% avalanche tested G S Ordering Information TO-252 Part Number Marking Package SUN05A50ZD
9.3. Size:640K auk
sun05a50zf.pdf
SUN05A50ZF New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =1.23 (Typ.) DS(on) Low gate charge: Q =17.5nC (Typ.) g Low reverse transfer capacitance: C =5pF (Typ.) rss Built-in ESD Diode 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN05A50ZF
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