1N80 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 1N80

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 39 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 25 nS

Conductancia de drenaje-sustrato (Cd): 20 pF

Resistencia drenaje-fuente RDS(on): 11 Ohm

Empaquetado / Estuche: TO-220, TO-251, TO-252, TO-220F, TO-220F1

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1N80 Datasheet (PDF)

1.1. mcu01n80.pdf Size:549K _update

1.2. sff11n80b.pdf Size:151K _upd-mosfet

1.3. sff11n80m sff11n80z.pdf Size:144K _upd-mosfet

SFF11N80 Series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 11 AMP / 800 Volts Part Number / Ordering Information 1/ 0.95 Ω SFF11N80 __ __ __ N-Channel MOSFET │ │ └ Screening 2/ __ = Not Screen │ │ TX = TX Level │ �

1.4. sff11n80n sff11n80p.pdf Size:164K _upd-mosfet

1.5. cs1n80a3h.pdf Size:410K _update_mosfet

Silicon N-Channel Power MOSFET R ○ CS1N80 A3H General Description： VDSS 800 V CS1N80 A3H, the silicon N-channel Enhanced ID 1 A PD (TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

1.6. cs1n80.pdf Size:101K _update_mosfet

CS1N80 型 N 沟道场效应晶体管参数符号测试条件最小值典型值最大值单位 PD TC=25℃ 2.1 W 线性降低系数 0.02 W/℃ ID （VGS=10V,TC=25℃） 0.2 A 极限 ID （VGS=10V,TC=100℃） 0.12 A 值 VGS ±30 V Tjm +150 ℃ Tstg -55 +150 ℃ 热特 RthJC 60 ℃/W 性 BVDSS VGS=0V,ID=0.25mA 800 V RDS on） VGS=10V,ID=0.1A 15.5 20 Ω （

1.7. cs1n80a4h.pdf Size:523K _update_mosfet

Silicon N-Channel Power MOSFET R ○ CS1N80 A4H General Description： VDSS 800 V CS1N80 A4H, the silicon N-channel Enhanced ID 1 A PD (TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.8. wvm11n80.pdf Size:22K _update_mosfet

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM11N80 Power MOSFET(N-channel) Transistor Features: 1. It’s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source co

1.9. tsm1n80cw tsm1n80sct.pdf Size:289K _update_mosfet

TSM1N80 800V N-Channel MOSFET TO-92 SOT-223 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(Ω) ID (A) 2. Drain 3. Source 21.6 @ VGS =10V 0.15 800 General Description The TSM1N80 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to with

1.10. cs1n80a1h.pdf Size:536K _update_mosfet

Silicon N-Channel Power MOSFET R ○ CS1N80 A1H General Description： VDSS 800 V CS1N80 A1H, the silicon N-channel Enhanced ID 1 A PD (TC=25℃) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

1.11. cju01n80.pdf Size:299K _update-mosfet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU01N80 N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION The CJU01N80 is an N-channel mode power MOSFET using advanced technology to provide costomers with planar stripe. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also

1.12. cjd01n80.pdf Size:374K _update-mosfet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate MOSFETS CJD01N80 N-Channel Power MOSFET TO-251-3L GENERAL DESCRIPTION The CJD01N80 is an N-channel mode power MOSFET using advanced technology to provide costomers with planar stripe. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also

1.13. siha11n80e.pdf Size:141K _update-mosfet

SiHA11N80E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Thin-Lead TO-220 FULLPAK • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses G • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance S please see www.vishay.com/doc?99912

1.14. mtp1n80e.pdf Size:141K _update-mosfet

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1N80E/D Designer's Data Sheet MTP1N80E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 1.0 AMPERES scheme to provide enhanced voltage–blocking capability without 800 VOLTS degra

1.15. mtd1n80e.pdf Size:231K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD1N80E/D Designer's? Data Sheet MTD1N80E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET N�Channel Enhancement�Mode Silicon Gate 1.0 AMPERES 800 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 12 OHM scheme to provide enhanced voltage�block

1.16. mtd1n80erev1a.pdf Size:269K _motorola

1.17. mtp1n80erev0ax.pdf Size:221K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1N80E/D Designer's? Data Sheet MTP1N80E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor N�Channel Enhancement�Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 1.0 AMPERES scheme to provide enhanced voltage�blocking capability without 800 VOLTS degrading performa

1.18. mtp1n80e.pdf Size:191K _motorola

1.19. fqt1n80tf ws.pdf Size:807K _fairchild_semi

November 2007 ® QFET FQT1N80 N-Channel MOSFET 800V, 0.2A, 20Ω Features Description • RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 5.5nC) stripe, DMOS technology. • Low Crss ( Typ. 2.7pF) This advanced technology has been especiall

1.20. fqt1n80.pdf Size:807K _fairchild_semi

1.21. fqu1n80.pdf Size:1270K _fairchild_semi

January 2014 FQD1N80 / FQU1N80 N-Channel QFET® MOSFET 800 V, 1.0 A, 20 Ω Description Features This N-Channel enhancement mode power MOSFET is • 1.0 A, 800 V, RDS(on) = 2̀0 Ω (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary planar ID = 0.5 A stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 5.5 nC) technology has been espe

1.22. fqd1n80 fqu1n80.pdf Size:731K _fairchild_semi

January 2009 QFET� FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect � 1.0A, 800V, RDS(on) = 20? @VGS = 10 V transistors are produced using Fairchild�s proprietary, � Low gate charge ( typical 5.5nC) planar stripe, DMOS technology. � Low Crss ( typical 2.7pF) This advanced technology has been especially tailored to �

1.23. fqd1n80tf fqd1n80tm.pdf Size:731K _fairchild_semi

January 2009 QFET® FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.0A, 800V, RDS(on) = 20Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.5nC) planar stripe, DMOS technology. • Low Crss ( typical 2.7pF) This advanced technology has been especially

1.24. fqu1n80tu.pdf Size:731K _fairchild_semi

1.25. spw11n80c3 rev2.91.pdf Size:506K _infineon

SPW11N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS � New revolutionary high voltage technology R @ Tj = 25�C 0.45 ? DS(on)max � Extreme dv/dt rated Q 64 nC g,typ � High peak current capability � Qualified according to JEDEC1) for target applications PG-TO247-3 � Pb-free lead plating; RoHS compliant � Ultra low gate charge � Ultra low effective capacitances

1.26. spa11n80c3 rev2.91 a.pdf Size:408K _infineon

SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS � New revolutionary high voltage technology R @ Tj = 25�C 0.45 ? DS(on)max � Extreme dv/dt rated Q 64 nC g,typ � High peak current capability � Qualified according to JEDEC1) for target applications � Pb-free lead plating; RoHS compliant � Ultra low gate charge � Ultra low effective capacitances � Fully iso

1.27. spp11n80c3 rev2.91.pdf Size:488K _infineon

SPP11N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS � New revolutionary high voltage technology R @ Tj = 25�C 0.45 ? DS(on)max � Extreme dv/dt rated Q 64 nC g,typ � High peak current capability � Qualified according to JEDEC1) for target applications PG-TO220-3 � Pb-free lead plating; RoHS compliant � Ultra low gate charge � Ultra low effective capacitances

1.28. ixth11n80 ixtm11n80 ixth13n80 ixtm13n80.pdf Size:98K _ixys

VDSS ID25 RDS(on) Ω IXTH / IXTM 11N80 800 V 11 A 0.95 Ω Ω Ω Ω MegaMOSTMFET Ω IXTH / IXTM 13N80 800 V 13 A 0.80 Ω Ω Ω Ω N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V D (TAB) VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 11N80 11

1.29. ixta1n80 ixtp1n80 ixty1n80.pdf Size:60K _ixys

IXTA 1N80 VDSS = 800 V High Voltage MOSFET IXTP 1N80 ID25 = 750 mA IXTY 1N80 N-Channel Enhancement Mode ? RDS(on) = 11 ? ? ? ? Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25�C to 150�C 800 V VDGR TJ = 25�C to 150�C; RGS = 1 M? 800 V D (TAB) VGS Continuous �20 V G D S VGSM Transient �30 V ID25 TC = 25�C 750 mA TO-2

1.30. ixta1n80p ixtp1n80p ixtu1n80p ixty1n80p.pdf Size:161K _ixys

Preliminary Technical Information VDSS = 800V IXTA1N80P PolarTM Power ID25 = 1A IXTP1N80P MOSFET ? ? RDS(on) ? ? ? 14? ? ? ? ? IXTU1N80P IXTY1N80P N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU) G G (TAB) (TAB) (TAB) S G D D S S Symbol Test Conditions Maximum Ratings TO-252 (IXTY) VDSS TJ = 25�C to 150�C 800 V VDGR TJ = 25�C to 150�

1.31. ixtu01n80 ixty01n80.pdf Size:66K _ixys

IXTU 01N80 VDSS = 800 V High Voltage MOSFET IXTY 01N80 ID25 = 100mA N-Channel, Enhancement Mode ? RDS(on) = 50 ? ? ? ? Symbol Test Conditions Maximum Ratings TO-251 AA (IXTU) 01N100 VDSS TJ = 25�C to 150�C 800 V VDGR TJ = 25�C to 150�C; RGS = 1 M? 800 V G VGS Continuous �20 V D D (TAB) S VGSM Transient �30 V ID25 TC = 25�C; TJ = 25�C to 150�C 100 mA IDM TC = 25�C, pulse width

1.32. ixfh11n80 ixfh13n80 ixfm11n80 ixfm13n80.pdf Size:95K _ixys

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 11 N80 800 V 11 A 0.95 W Power MOSFETs IXFH/IXFM 13 N80 800 V 13 A 0.80 W trr ? 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25�C to 150�C 800 V VDGR TJ = 25�C to 150�C; RGS = 1 MW 800 V VGS Continuous �20 V (TAB) VGSM Transient �30 V ID25 TC = 25�C 11N80

1.33. 1n80.pdf Size:250K _utc

UNISONIC TECHNOLOGIES CO., LTD 1N80 Power MOSFET 1A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse

1.34. apt11n80kc3.pdf Size:157K _apt

APT11N80KC3 Ω 800V 11A 0.450Ω Ω Ω Ω Super Junction MOSFET TO-220 COOLMOS Power Semiconductors • Ultra low RDS(ON) G D S • Low Miller Capacitance D • Ultra Low Gate Charge, Qg • Avalanche Energy Rated G • TO-220 Package S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT11N80KC3 UNIT VDSS Drain-Source Voltage 800

1.35. apt11n80kc3g.pdf Size:166K _apt

APT11N80KC3 800V 11A 0.450Ω Super Junction MOSFET TO-220 • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg G D • Avalanche Energy Rated S • Extreme dv/dt Rated MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT11N80KC3 UNIT VDSS Drain-Source Voltage 800 Volts ID Continuous Drain Current @ TC = 25°C 1

1.36. apt11n80bc3g.pdf Size:158K _apt

APT11N80BC3 Ω 800V 11A 0.45Ω Ω Ω Ω Super Junction MOSFET TO-247 COOLMOS Power Semiconductors • Ultra low RDS(ON) • Low Miller Capacitance D • Ultra Low Gate Charge, Qg • Avalanche Energy Rated G • TO-247 Package S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT11N80BC3 UNIT VDSS Drain-Source Voltage 800 Volts ID

1.37. apt11n80bc3.pdf Size:157K _apt

1.38. apt31n80jc3.pdf Size:173K _apt

APT31N80JC3 Ω 800V 31A 0.145Ω Ω Ω Ω Super Junction MOSFET COOLMOS Power Semiconductors • Ultra low RDS(ON) "UL Recognized" • Low Miller Capacitance ISOTOP® • Ultra Low Gate Charge, Qg D • Avalanche Energy Rated G • N-Channel Enhancement Mode • Popular SOT-227 Package S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Paramete

1.39. spw11n80c3.pdf Size:243K _inchange_semiconductor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPW11N80C3 ISPW11N80C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤450mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou

1.40. spp11n80c3.pdf Size:205K _inchange_semiconductor

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPP11N80C3 ·FEATURES ·Ultra low effective capacitances ·Low gate charge ·Improved transconductance ·Low gate drive power loss ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PA

1.41. siha11n80e.pdf Size:200K _inchange_semiconductor

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SiHA11N80E ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS

1.42. spa11n80c3.pdf Size:202K _inchange_semiconductor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPA11N80C3 ·FEATURES ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25

1.43. ssf1n80g5.pdf Size:360K _silikron

SSF1N80G5 Main Product Characteristics: VDSS 800V RDS(on) 13Ω (typ.) ID 1A Marking and pin SOT223 Schematic diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery �

1.44. ssf1n80d.pdf Size:400K _silikron

SSF1N80D Main Product Characteristics: VDSS 800V RDS(on) 13Ω (typ.) ID 1A Marking and pin TO-252 Schematic diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery �

1.45. brs1n80.pdf Size:249K _blue-rocket-elect

BRS1N80(CS1N80S) N-CHANNEL MOSFET/N 沟道 MOS 晶体管用途: 用于高功率 DC/DC 转换和功率开关。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 特点: 低栅电荷,低反馈电容,开关速度快。 Features: Low gate charge, low crss, fast switching. 极限参数/Absolute maximum ratings(Ta=25℃

1.46. cs1n80 a1h.pdf Size:536K _crhj