1N80 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 1N80

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 39 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 25 nS

Conductancia de drenaje-sustrato (Cd): 20 pF

Resistencia drenaje-fuente RDS(on): 11 Ohm

Empaquetado / Estuche: TO-220_TO-251_TO-252_TO-220F_TO-220F1

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1N80 Datasheet (PDF)

1.1. mcu01n80.pdf Size:549K _update

1.2. sff11n80b.pdf Size:151K _upd-mosfet

1.3. sff11n80m sff11n80z.pdf Size:144K _upd-mosfet

SFF11N80 Series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 11 AMP / 800 Volts Part Number / Ordering Information 1/ 0.95 Ω SFF11N80 __ __ __ N-Channel MOSFET │ │ └ Screening 2/ __ = Not Screen │ │ TX = TX Level │ �

1.4. sff11n80n sff11n80p.pdf Size:164K _upd-mosfet

1.5. cs1n80a4h.pdf Size:523K _update_mosfet

Silicon N-Channel Power MOSFET R ○ CS1N80 A4H General Description： VDSS 800 V CS1N80 A4H, the silicon N-channel Enhanced ID 1 A PD (TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.6. cs1n80.pdf Size:101K _update_mosfet

CS1N80 型 N 沟道场效应晶体管参数符号测试条件最小值典型值最大值单位 PD TC=25℃ 2.1 W 线性降低系数 0.02 W/℃ ID （VGS=10V,TC=25℃） 0.2 A 极限 ID （VGS=10V,TC=100℃） 0.12 A 值 VGS ±30 V Tjm +150 ℃ Tstg -55 +150 ℃ 热特 RthJC 60 ℃/W 性 BVDSS VGS=0V,ID=0.25mA 800 V RDS on） VGS=10V,ID=0.1A 15.5 20 Ω （

1.7. wvm11n80.pdf Size:22K _update_mosfet

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM11N80 Power MOSFET(N-channel) Transistor Features: 1. It’s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source co

1.8. tsm1n80cw tsm1n80sct.pdf Size:289K _update_mosfet

TSM1N80 800V N-Channel MOSFET TO-92 SOT-223 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(Ω) ID (A) 2. Drain 3. Source 21.6 @ VGS =10V 0.15 800 General Description The TSM1N80 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to with

1.9. cs1n80a1h.pdf Size:536K _update_mosfet

Silicon N-Channel Power MOSFET R ○ CS1N80 A1H General Description： VDSS 800 V CS1N80 A1H, the silicon N-channel Enhanced ID 1 A PD (TC=25℃) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

1.10. cs1n80a3h.pdf Size:410K _update_mosfet

Silicon N-Channel Power MOSFET R ○ CS1N80 A3H General Description： VDSS 800 V CS1N80 A3H, the silicon N-channel Enhanced ID 1 A PD (TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

1.11. mtd1n80erev1a.pdf Size:269K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD1N80E/D Designer's? Data Sheet MTD1N80E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET N�Channel Enhancement�Mode Silicon Gate 1.0 AMPERES 800 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 12 OHM scheme to provide enhanced voltage�block

1.12. mtd1n80e.pdf Size:231K _motorola

1.13. mtp1n80erev0ax.pdf Size:221K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1N80E/D Designer's? Data Sheet MTP1N80E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor N�Channel Enhancement�Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 1.0 AMPERES scheme to provide enhanced voltage�blocking capability without 800 VOLTS degrading performa

1.14. mtp1n80e.pdf Size:191K _motorola

1.15. fqu1n80.pdf Size:1270K _fairchild_semi

January 2014 FQD1N80 / FQU1N80 N-Channel QFET® MOSFET 800 V, 1.0 A, 20 Ω Description Features This N-Channel enhancement mode power MOSFET is • 1.0 A, 800 V, RDS(on) = 2̀0 Ω (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary planar ID = 0.5 A stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 5.5 nC) technology has been espe

1.16. fqu1n80tu.pdf Size:731K _fairchild_semi

January 2009 QFET® FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.0A, 800V, RDS(on) = 20Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.5nC) planar stripe, DMOS technology. • Low Crss ( typical 2.7pF) This advanced technology has been especially

1.17. fqd1n80tf fqd1n80tm.pdf Size:731K _fairchild_semi

1.18. fqt1n80tf ws.pdf Size:807K _fairchild_semi

November 2007 ® QFET FQT1N80 N-Channel MOSFET 800V, 0.2A, 20Ω Features Description • RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 5.5nC) stripe, DMOS technology. • Low Crss ( Typ. 2.7pF) This advanced technology has been especiall

1.19. fqt1n80.pdf Size:807K _fairchild_semi

1.20. fqd1n80 fqu1n80.pdf Size:731K _fairchild_semi

January 2009 QFET� FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect � 1.0A, 800V, RDS(on) = 20? @VGS = 10 V transistors are produced using Fairchild�s proprietary, � Low gate charge ( typical 5.5nC) planar stripe, DMOS technology. � Low Crss ( typical 2.7pF) This advanced technology has been especially tailored to �

1.21. spa11n80c3 rev2.91 a.pdf Size:408K _infineon

SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS � New revolutionary high voltage technology R @ Tj = 25�C 0.45 ? DS(on)max � Extreme dv/dt rated Q 64 nC g,typ � High peak current capability � Qualified according to JEDEC1) for target applications � Pb-free lead plating; RoHS compliant � Ultra low gate charge � Ultra low effective capacitances � Fully iso

1.22. spp11n80c3 rev2.91.pdf Size:488K _infineon

SPP11N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS � New revolutionary high voltage technology R @ Tj = 25�C 0.45 ? DS(on)max � Extreme dv/dt rated Q 64 nC g,typ � High peak current capability � Qualified according to JEDEC1) for target applications PG-TO220-3 � Pb-free lead plating; RoHS compliant � Ultra low gate charge � Ultra low effective capacitances

1.23. spw11n80c3 rev2.91.pdf Size:506K _infineon

SPW11N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS � New revolutionary high voltage technology R @ Tj = 25�C 0.45 ? DS(on)max � Extreme dv/dt rated Q 64 nC g,typ � High peak current capability � Qualified according to JEDEC1) for target applications PG-TO247-3 � Pb-free lead plating; RoHS compliant � Ultra low gate charge � Ultra low effective capacitances

1.24. ixtu01n80 ixty01n80.pdf Size:66K _ixys

IXTU 01N80 VDSS = 800 V High Voltage MOSFET IXTY 01N80 ID25 = 100mA N-Channel, Enhancement Mode ? RDS(on) = 50 ? ? ? ? Symbol Test Conditions Maximum Ratings TO-251 AA (IXTU) 01N100 VDSS TJ = 25�C to 150�C 800 V VDGR TJ = 25�C to 150�C; RGS = 1 M? 800 V G VGS Continuous �20 V D D (TAB) S VGSM Transient �30 V ID25 TC = 25�C; TJ = 25�C to 150�C 100 mA IDM TC = 25�C, pulse width

1.25. ixth11n80 ixtm11n80 ixth13n80 ixtm13n80.pdf Size:98K _ixys

VDSS ID25 RDS(on) Ω IXTH / IXTM 11N80 800 V 11 A 0.95 Ω Ω Ω Ω MegaMOSTMFET Ω IXTH / IXTM 13N80 800 V 13 A 0.80 Ω Ω Ω Ω N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V D (TAB) VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 11N80 11

1.26. ixta1n80p ixtp1n80p ixtu1n80p ixty1n80p.pdf Size:161K _ixys

Preliminary Technical Information VDSS = 800V IXTA1N80P PolarTM Power ID25 = 1A IXTP1N80P MOSFET ? ? RDS(on) ? ? ? 14? ? ? ? ? IXTU1N80P IXTY1N80P N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU) G G (TAB) (TAB) (TAB) S G D D S S Symbol Test Conditions Maximum Ratings TO-252 (IXTY) VDSS TJ = 25�C to 150�C 800 V VDGR TJ = 25�C to 150�

1.27. ixfh11n80 ixfh13n80 ixfm11n80 ixfm13n80.pdf Size:95K _ixys

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 11 N80 800 V 11 A 0.95 W Power MOSFETs IXFH/IXFM 13 N80 800 V 13 A 0.80 W trr ? 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25�C to 150�C 800 V VDGR TJ = 25�C to 150�C; RGS = 1 MW 800 V VGS Continuous �20 V (TAB) VGSM Transient �30 V ID25 TC = 25�C 11N80

1.28. ixta1n80 ixtp1n80 ixty1n80.pdf Size:60K _ixys

IXTA 1N80 VDSS = 800 V High Voltage MOSFET IXTP 1N80 ID25 = 750 mA IXTY 1N80 N-Channel Enhancement Mode ? RDS(on) = 11 ? ? ? ? Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25�C to 150�C 800 V VDGR TJ = 25�C to 150�C; RGS = 1 M? 800 V D (TAB) VGS Continuous �20 V G D S VGSM Transient �30 V ID25 TC = 25�C 750 mA TO-2

1.29. 1n80.pdf Size:250K _utc

UNISONIC TECHNOLOGIES CO., LTD 1N80 Power MOSFET 1A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse

1.30. apt31n80jc3.pdf Size:173K _apt

APT31N80JC3 Ω 800V 31A 0.145Ω Ω Ω Ω Super Junction MOSFET COOLMOS Power Semiconductors • Ultra low RDS(ON) "UL Recognized" • Low Miller Capacitance ISOTOP® • Ultra Low Gate Charge, Qg D • Avalanche Energy Rated G • N-Channel Enhancement Mode • Popular SOT-227 Package S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Paramete

1.31. apt11n80kc3g.pdf Size:166K _apt

APT11N80KC3 800V 11A 0.450Ω Super Junction MOSFET TO-220 • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg G D • Avalanche Energy Rated S • Extreme dv/dt Rated MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT11N80KC3 UNIT VDSS Drain-Source Voltage 800 Volts ID Continuous Drain Current @ TC = 25°C 1

1.32. apt11n80bc3.pdf Size:157K _apt

APT11N80BC3 Ω 800V 11A 0.45Ω Ω Ω Ω Super Junction MOSFET TO-247 COOLMOS Power Semiconductors • Ultra low RDS(ON) • Low Miller Capacitance D • Ultra Low Gate Charge, Qg • Avalanche Energy Rated G • TO-247 Package S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT11N80BC3 UNIT VDSS Drain-Source Voltage 800 Volts ID

1.33. apt11n80kc3.pdf Size:157K _apt

APT11N80KC3 Ω 800V 11A 0.450Ω Ω Ω Ω Super Junction MOSFET TO-220 COOLMOS Power Semiconductors • Ultra low RDS(ON) G D S • Low Miller Capacitance D • Ultra Low Gate Charge, Qg • Avalanche Energy Rated G • TO-220 Package S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT11N80KC3 UNIT VDSS Drain-Source Voltage 800

1.34. apt11n80bc3g.pdf Size:158K _apt

1.35. ssf1n80d.pdf Size:400K _silikron

SSF1N80D Main Product Characteristics: VDSS 800V RDS(on) 13Ω (typ.) ID 1A Marking and pin TO-252 Schematic diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery �

1.36. ssf1n80g5.pdf Size:360K _silikron

SSF1N80G5 Main Product Characteristics: VDSS 800V RDS(on) 13Ω (typ.) ID 1A Marking and pin SOT223 Schematic diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery �

1.37. brs1n80.pdf Size:249K _blue-rocket-elect

BRS1N80(CS1N80S) N-CHANNEL MOSFET/N 沟道 MOS 晶体管用途: 用于高功率 DC/DC 转换和功率开关。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 特点: 低栅电荷,低反馈电容,开关速度快。 Features: Low gate charge, low crss, fast switching. 极限参数/Absolute maximum ratings(Ta=25℃

1.38. cs1n80 a3h.pdf Size:410K _crhj