All MOSFET. 1N80 Datasheet

 

1N80 MOSFET. Datasheet pdf. Equivalent

Type Designator: 1N80

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 39 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 1 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 20 pF

Maximum Drain-Source On-State Resistance (Rds): 11 Ohm

Package: TO-220_TO-251_TO-252_TO-220F_TO-220F1

1N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

1N80 Datasheet (PDF)

1.1. mcu01n80.pdf Size:549K _update

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1N80



1.2. sff11n80b.pdf Size:151K _upd-mosfet

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 1.3. sff11n80m sff11n80z.pdf Size:144K _upd-mosfet

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SFF11N80 Series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 11 AMP / 800 Volts Part Number / Ordering Information 1/ 0.95 Ω SFF11N80 __ __ __ N-Channel MOSFET │ │ └ Screening 2/ __ = Not Screen │ │ TX = TX Level │

1.4. sff11n80n sff11n80p.pdf Size:164K _upd-mosfet

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1N80



 1.5. cs1n80a4h.pdf Size:523K _update_mosfet

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1N80

Silicon N-Channel Power MOSFET R ○ CS1N80 A4H General Description: VDSS 800 V CS1N80 A4H, the silicon N-channel Enhanced ID 1 A PD (TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.6. cs1n80.pdf Size:101K _update_mosfet

1N80

CS1N80 型 N 沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 2.1 W 线性降低系数 0.02 W/℃ ID (VGS=10V,TC=25℃) 0.2 A 极 限 ID (VGS=10V,TC=100℃) 0.12 A 值 VGS ±30 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 60 ℃/W 性 BVDSS VGS=0V,ID=0.25mA 800 V RDS on) VGS=10V,ID=0.1A 15.5 20 Ω (

1.7. wvm11n80.pdf Size:22K _update_mosfet

1N80

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM11N80 Power MOSFET(N-channel) Transistor Features: 1. It’s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source co

1.8. tsm1n80cw tsm1n80sct.pdf Size:289K _update_mosfet

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 TSM1N80 800V N-Channel MOSFET TO-92 SOT-223 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(Ω) ID (A) 2. Drain 3. Source 21.6 @ VGS =10V 0.15 800 General Description The TSM1N80 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to with

1.9. cs1n80a1h.pdf Size:536K _update_mosfet

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Silicon N-Channel Power MOSFET R ○ CS1N80 A1H General Description: VDSS 800 V CS1N80 A1H, the silicon N-channel Enhanced ID 1 A PD (TC=25℃) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

1.10. cs1n80a3h.pdf Size:410K _update_mosfet

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1N80

Silicon N-Channel Power MOSFET R ○ CS1N80 A3H General Description: VDSS 800 V CS1N80 A3H, the silicon N-channel Enhanced ID 1 A PD (TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

1.11. mtd1n80erev1a.pdf Size:269K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD1N80E/D Designer's? Data Sheet MTD1N80E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 1.0 AMPERES 800 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 12 OHM scheme to provide enhanced voltageblock

1.12. mtd1n80e.pdf Size:231K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD1N80E/D Designer's? Data Sheet MTD1N80E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 1.0 AMPERES 800 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 12 OHM scheme to provide enhanced voltageblock

1.13. mtp1n80erev0ax.pdf Size:221K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1N80E/D Designer's? Data Sheet MTP1N80E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 1.0 AMPERES scheme to provide enhanced voltageblocking capability without 800 VOLTS degrading performa

1.14. mtp1n80e.pdf Size:191K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1N80E/D Designer's? Data Sheet MTP1N80E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 1.0 AMPERES scheme to provide enhanced voltageblocking capability without 800 VOLTS degrading performa

1.15. fqu1n80.pdf Size:1270K _fairchild_semi

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January 2014 FQD1N80 / FQU1N80 N-Channel QFET® MOSFET 800 V, 1.0 A, 20 Ω Description Features This N-Channel enhancement mode power MOSFET is • 1.0 A, 800 V, RDS(on) = 2̀0 Ω (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary planar ID = 0.5 A stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 5.5 nC) technology has been espe

1.16. fqu1n80tu.pdf Size:731K _fairchild_semi

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January 2009 QFET® FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.0A, 800V, RDS(on) = 20Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.5nC) planar stripe, DMOS technology. • Low Crss ( typical 2.7pF) This advanced technology has been especially

1.17. fqd1n80tf fqd1n80tm.pdf Size:731K _fairchild_semi

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January 2009 QFET® FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.0A, 800V, RDS(on) = 20Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.5nC) planar stripe, DMOS technology. • Low Crss ( typical 2.7pF) This advanced technology has been especially

1.18. fqt1n80tf ws.pdf Size:807K _fairchild_semi

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November 2007 ® QFET FQT1N80 N-Channel MOSFET 800V, 0.2A, 20Ω Features Description • RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 5.5nC) stripe, DMOS technology. • Low Crss ( Typ. 2.7pF) This advanced technology has been especiall

1.19. fqt1n80.pdf Size:807K _fairchild_semi

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1N80

November 2007 ® QFET FQT1N80 N-Channel MOSFET 800V, 0.2A, 20Ω Features Description • RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 5.5nC) stripe, DMOS technology. • Low Crss ( Typ. 2.7pF) This advanced technology has been especiall

1.20. fqd1n80 fqu1n80.pdf Size:731K _fairchild_semi

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January 2009 QFET FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.0A, 800V, RDS(on) = 20? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.5nC) planar stripe, DMOS technology. Low Crss ( typical 2.7pF) This advanced technology has been especially tailored to

1.21. spa11n80c3 rev2.91 a.pdf Size:408K _infineon

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SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25C 0.45 ? DS(on)max Extreme dv/dt rated Q 64 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances Fully iso

1.22. spp11n80c3 rev2.91.pdf Size:488K _infineon

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SPP11N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25C 0.45 ? DS(on)max Extreme dv/dt rated Q 64 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances

1.23. spw11n80c3 rev2.91.pdf Size:506K _infineon

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SPW11N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25C 0.45 ? DS(on)max Extreme dv/dt rated Q 64 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO247-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances

1.24. ixtu01n80 ixty01n80.pdf Size:66K _ixys

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IXTU 01N80 VDSS = 800 V High Voltage MOSFET IXTY 01N80 ID25 = 100mA N-Channel, Enhancement Mode ? RDS(on) = 50 ? ? ? ? Symbol Test Conditions Maximum Ratings TO-251 AA (IXTU) 01N100 VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V G VGS Continuous 20 V D D (TAB) S VGSM Transient 30 V ID25 TC = 25C; TJ = 25C to 150C 100 mA IDM TC = 25C, pulse width

1.25. ixth11n80 ixtm11n80 ixth13n80 ixtm13n80.pdf Size:98K _ixys

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VDSS ID25 RDS(on) Ω IXTH / IXTM 11N80 800 V 11 A 0.95 Ω Ω Ω Ω MegaMOSTMFET Ω IXTH / IXTM 13N80 800 V 13 A 0.80 Ω Ω Ω Ω N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V D (TAB) VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 11N80 11

1.26. ixta1n80p ixtp1n80p ixtu1n80p ixty1n80p.pdf Size:161K _ixys

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Preliminary Technical Information VDSS = 800V IXTA1N80P PolarTM Power ID25 = 1A IXTP1N80P MOSFET ? ? RDS(on) ? ? ? 14? ? ? ? ? IXTU1N80P IXTY1N80P N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU) G G (TAB) (TAB) (TAB) S G D D S S Symbol Test Conditions Maximum Ratings TO-252 (IXTY) VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150

1.27. ixfh11n80 ixfh13n80 ixfm11n80 ixfm13n80.pdf Size:95K _ixys

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VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 11 N80 800 V 11 A 0.95 W Power MOSFETs IXFH/IXFM 13 N80 800 V 13 A 0.80 W trr ? 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 MW 800 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 25C 11N80

1.28. ixta1n80 ixtp1n80 ixty1n80.pdf Size:60K _ixys

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IXTA 1N80 VDSS = 800 V High Voltage MOSFET IXTP 1N80 ID25 = 750 mA IXTY 1N80 N-Channel Enhancement Mode ? RDS(on) = 11 ? ? ? ? Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V D (TAB) VGS Continuous 20 V G D S VGSM Transient 30 V ID25 TC = 25C 750 mA TO-2

1.29. 1n80.pdf Size:250K _utc

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UNISONIC TECHNOLOGIES CO., LTD 1N80 Power MOSFET 1A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse

1.30. apt31n80jc3.pdf Size:173K _apt

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APT31N80JC3 Ω 800V 31A 0.145Ω Ω Ω Ω Super Junction MOSFET COOLMOS Power Semiconductors • Ultra low RDS(ON) "UL Recognized" • Low Miller Capacitance ISOTOP® • Ultra Low Gate Charge, Qg D • Avalanche Energy Rated G • N-Channel Enhancement Mode • Popular SOT-227 Package S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Paramete

1.31. apt11n80bc3.pdf Size:157K _apt

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APT11N80BC3 Ω 800V 11A 0.45Ω Ω Ω Ω Super Junction MOSFET TO-247 COOLMOS Power Semiconductors • Ultra low RDS(ON) • Low Miller Capacitance D • Ultra Low Gate Charge, Qg • Avalanche Energy Rated G • TO-247 Package S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT11N80BC3 UNIT VDSS Drain-Source Voltage 800 Volts ID

1.32. apt11n80kc3.pdf Size:157K _apt

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APT11N80KC3 Ω 800V 11A 0.450Ω Ω Ω Ω Super Junction MOSFET TO-220 COOLMOS Power Semiconductors • Ultra low RDS(ON) G D S • Low Miller Capacitance D • Ultra Low Gate Charge, Qg • Avalanche Energy Rated G • TO-220 Package S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT11N80KC3 UNIT VDSS Drain-Source Voltage 800

1.33. ssf1n80d.pdf Size:400K _silikron

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 SSF1N80D  Main Product Characteristics: VDSS 800V RDS(on) 13Ω (typ.) ID 1A Marking and pin TO-252 Schematic diagram  Assignment  Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

1.34. ssf1n80g5.pdf Size:360K _silikron

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 SSF1N80G5  Main Product Characteristics: VDSS 800V RDS(on) 13Ω (typ.) ID 1A Marking and pin SOT223 Schematic diagram  Assignment  Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

1.35. brs1n80.pdf Size:249K _blue-rocket-elect

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BRS1N80(CS1N80S) N-CHANNEL MOSFET/N 沟道 MOS 晶体管 用途: 用于高功率 DC/DC 转换和功率开关。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 特点: 低栅电荷,低反馈电容,开关速度快。 Features: Low gate charge, low crss, fast switching. 极限参数/Absolute maximum ratings(Ta=25℃

1.36. cs1n80 a3h.pdf Size:410K _crhj

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1N80

Silicon N-Channel Power MOSFET R ○ CS1N80 A3H General Description: VDSS 800 V CS1N80 A3H, the silicon N-channel Enhanced ID 1 A PD (TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

1.37. cs1n80 a4h.pdf Size:523K _crhj

1N80
1N80

Silicon N-Channel Power MOSFET R ○ CS1N80 A4H General Description: VDSS 800 V CS1N80 A4H, the silicon N-channel Enhanced ID 1 A PD (TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.38. cs1n80 a1h.pdf Size:536K _crhj

1N80
1N80

Silicon N-Channel Power MOSFET R ○ CS1N80 A1H General Description: VDSS 800 V CS1N80 A1H, the silicon N-channel Enhanced ID 1 A PD (TC=25℃) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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