12N80 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 12N80
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 390 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 315 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
Paquete / Cubierta: TO-3P TO-247 TO-230 TO-220F2
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12N80 Datasheet (PDF)
12n80.pdf

UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withs
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UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withsta
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JFPC2N80C JFFM12N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURESLOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER S
Otros transistores... 3N80 , 4N80 , 5N80 , 6N80 , 7N80 , 8N80 , 9N80 , 10N80 , 5N60 , 1N70Z , 2N70 , 2N70Z , 2N70ZL , 2N70K , 3N70 , 3N70A , 3N70K .
History: NCEP055N30GU | NCEP082N10AS | IRF250P224 | VS3P07C | AP3N9R5H | HM4402B | SPB07N60C2
History: NCEP055N30GU | NCEP082N10AS | IRF250P224 | VS3P07C | AP3N9R5H | HM4402B | SPB07N60C2



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