12N80 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withs

UNISONIC TECHNOLOGIES CO., LTD 12N80-FC Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-220 TO-220F The UTC 12N80-FC provide excellent R , low gate charge DS(ON) and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 1 FEATURES * R 0.78 @ V =10V, I =6.0A DS(ON) GS D TO-220F1 TO-3P

UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withsta

JFPC2N80C JFFM12N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURES LOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER S

TMAN12N80Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 800V 12A

TMAN12N80AZ N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 800V 12A

WML12N80M3, W 80M3, WM M3 WMN12N8 MM12N80M WMO1 80M3, WM M3 12N80M3, WMP12N8 MK12N80M 800V 0.53 S T V Super Junction Power MOSFET Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perfo

nvert Suzhou Convert Semiconductor Co ., Ltd. CS12N80F, CS12N80V 800V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS12N80F TO-220F CS12N80F C

FIR12N80FG 800V N-Channel MOSFET PIN Connection TO-220F Features Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge Qg= 45nC (Typ.) BVDSS=800V,ID=12A G D S RDS(on) 1.0 (Max) @VG=10V 100% Avalanche Tested Marking Diagram D G S Y = Year A = Assembly Location WW = Work Week