All MOSFET. 12N80 Datasheet

 

12N80 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 12N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 390 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 123 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO-3P TO-247 TO-230 TO-220F2

 12N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

12N80 Datasheet (PDF)

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