12N80 MOSFET. Datasheet pdf. Equivalent
Type Designator: 12N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 390 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 315 pF
Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm
Package: TO-3P_TO-247_TO-230_TO-220F2
12N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
12N80 Datasheet (PDF)
1.1. tman12n80az.pdf 
Size:505K _upd-mosfet
TMAN12N80AZ N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 800V 12A < 0.65W 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification Improved ESD performance Device Package Marking Remark TMAN12N80AZ TO-3PN TMAN12N80AZ RoHS Absolute Maximum Ratings Parameter Symbol TMAN12N80AZ Unit Drain-Source Voltage V
1.2. tman12n80z.pdf Size:502K _upd-mosfet
TMAN12N80Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 800V 12A <0.65W 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification Device Package Marking Remark TMAN12N80Z TO-3PN TMAN12N80Z RoHS Absolute Maximum Ratings Parameter Symbol TMAN12N80Z Unit Drain-Source Voltage VDS 800 V Gate-Source Voltage VG
1.3. 12n80.pdf Size:232K _utc
UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
