Аналог (замена) для 12N80

 

 

12N80 Datasheet (PDF)

1.1. tman12n80az.pdf Size:505K _upd-mosfet

TMAN12N80AZ N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 800V 12A < 0.65W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification  Improved ESD performance Device Package Marking Remark TMAN12N80AZ TO-3PN TMAN12N80AZ RoHS Absolute Maximum Ratings Parameter Symbol TMAN12N80AZ Unit Drain-Source Voltage V

1.2. tman12n80z.pdf Size:502K _upd-mosfet

TMAN12N80Z N-channel MOSFET Features BVDSS ID RDS(on)MAX  Low gate charge 800V 12A <0.65W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification Device Package Marking Remark TMAN12N80Z TO-3PN TMAN12N80Z RoHS Absolute Maximum Ratings Parameter Symbol TMAN12N80Z Unit Drain-Source Voltage VDS 800 V Gate-Source Voltage VG

 1.3. 12n80.pdf Size:232K _utc

UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand

     

 

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Обновления

MOSFET: CMB1405 | CMP1405 | JCS4N60F | JCS4N60C | JCS4N60B | JCS4N60S | JCS4N60R | JCS4N60V | MDU2657 | OSG55R190PF | OSG55R190FF | OSG55R190DF | OSG55R190AF | PTP04N04N | RU7088R3 |