3N70 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3N70
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 30 nS
Cossⓘ - Capacitancia de salida: 50 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.1 Ohm
Encapsulados: TO-251
TO-252
TO-220F
Búsqueda de reemplazo de 3N70 MOSFET
- Selecciónⓘ de transistores por parámetros
3N70 datasheet
..1. Size:248K utc
3n70.pdf 
UNISONIC TECHNOLOGIES CO., LTD 3N70 Power MOSFET 3A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app
0.2. Size:248K utc
3n70l-tf3-t 3n70g-tf3-t 3n70l-tm3-t 3n70g-tm3-t 3n70l-tn3-t 3n70g-tn3-t 3n70l-tn3-r 3n70g-tn3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 3N70 Power MOSFET 3A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app
0.3. Size:260K utc
3n70a.pdf
UNISONIC TECHNOLOGIES CO., LTD 3N70A Power MOSFET 700V, 3A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N70A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching appli
0.4. Size:265K utc
3n70k.pdf
UNISONIC TECHNOLOGIES CO., LTD 3N70K Power MOSFET 3A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N70K is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a
0.5. Size:63K ape
ap03n70i-hf.pdf
AP03N70I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching RDS(ON) 3.6 Simple Drive Requirement ID 3.3A G RoHS Compliant S Description AP03N70 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications. It provid
0.6. Size:40K ape
ap03n70h-h.pdf
AP03N70H/J-H Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Repetitive Avalanche Rated BVDSS 700V D Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5A G RoHS Compliant S Description The TO-252 package is universally preferred for all commercial- industrial surface mount applications and suited for AC
0.7. Size:175K ape
ap03n70i.pdf
AP03N70I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching RDS(ON) 3.6 Simple Drive Requirement ID4 3.3A G RoHS Compliant S Description AP03N70 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance a
0.8. Size:171K ape
ap03n70j-h.pdf
AP03N70H/J-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 700V D Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5A G RoHS Compliant S Description AP03N70 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resi
0.9. Size:94K ape
ap03n70hj-hf.pdf
AP03N70H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Speed RDS(ON) 3.6 Simple Drive Requirement ID 3.3A G RoHS Compliant S Description G The TO-252 package is widely preferred for all commercial-industrial D TO-252(H) S surface mount applications and suited f
0.10. Size:103K ape
ap03n70hj-h.pdf
AP03N70H/J-H RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5A G RoHS Compliant S Description The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters
0.11. Size:45K ape
ap03n70i-h.pdf
AP03N70I-H Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Repetitive Avalanche Rated BVDSS 700V D Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5A G RoHS Compliant S Description AP03N70 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applicat
0.12. Size:61K ape
ap03n70p-a.pdf
AP03N70P-A Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Repetitive Avalanche Rated BVDSS 650V D Fast Switching Speed RDS(ON) 3.6 Simple Drive Requirement ID 3.3A G RoHS Compliant S Description AP03N70 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applicat
0.13. Size:41K ape
ap03n70p-h.pdf
AP03N70P-H Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Repetitive Avalanche Rated BVDSS 700V D Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5A G RoHS Compliant S Description AP03N70 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applicat
0.14. Size:60K ape
ap03n70i-h-hf.pdf
AP03N70I-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5A G RoHS Compliant & Halogen-Free S Description AP03N70 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter
0.15. Size:237K ape
ap03n70h.pdf
AP03N70H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Speed RDS(ON) 3.6 Simple Drive Requirement ID 3.3A G RoHS Compliant S Description AP03N70 series are from Advanced Power innovated design and silicon G D process technology to achieve the lowest possible on-r
0.16. Size:97K ape
ap03n70h-a-hf ap03n70j-a-hf.pdf
AP03N70H/J-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 3.6 Simple Drive Requirement ID 3.3A G RoHS Compliant & Halogen-Free S Description G The TO-252 package is widely preferred for all commercial-industrial D TO-252(H) S surface mount
0.17. Size:59K ape
ap03n70i-a-hf.pdf
AP03N70I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching RDS(ON) 3.6 Simple Drive Requirement ID 3.3A G RoHS Compliant S Description AP03N70 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications. G D
0.18. Size:64K ape
ap03n70h-h-hf ap03n70j-h-hf.pdf
AP03N70H/J-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 700V D Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5A G RoHS Compliant S Description The TO-252 package is widely preferred for all commercial- industrial surface mount applications and suited for AC/DC G con
0.19. Size:202K ape
ap03n70j.pdf
AP03N70H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Speed RDS(ON) 3.6 Simple Drive Requirement ID 3.3A G RoHS Compliant S Description AP03N70 series are from Advanced Power innovated design and silicon G D process technology to achieve the lowest possible on-r
0.20. Size:133K samhop
sdu03n70 sdd03n70.pdf
Green Product SDU/D03N70 SamHop Microelectronics corp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Typ Rugged and reliable. 700V 3A 3.9 @VGS=10V Suface Mount Package. D G S SDU SERIES SDD SERIES SDD SERIES TO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK) ORDERING INF
0.21. Size:351K crhj
cs3n70 a3h-g.pdf
Silicon N-Channel Power MOSFET R CS3N70 A3H-G General Description VDSS 700 V CS3N70 A3H-G the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
0.22. Size:592K samwin
swf13n70d.pdf
SW13N70D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS 700V High ruggedness Low RDS(ON) (Typ 0.7 )@VGS=10V ID 13A Low Gate Charge (Typ 52nC) RDS(ON) 0.7 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application LED, TV-Power, Charger 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This pow
0.23. Size:571K silicon standard
ssm03n70gp-h.pdf
SSM03N70GP-H N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM03N70GP-H achieves fast switching performance BVDSS 700V with low gate charge without a complex drive circuit. It RDS(ON) 4.4 is suitable for high voltage applications such as AC/DC converters, SMPS and general off-line switching circuits. I 2.5A D Pb-free; RoHS-compliant TO-220 The SSM03N70G
0.24. Size:181K silicon standard
ssm03n70gh ssm03n70gj.pdf
SSM03N70GH/GJ N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY BVDSS 600V D RDS(ON) 3.6 Repetitive Avalanche Rated ID 3.3A Fast Switching Speed G Simple Drive Requirement S DESCRIPTION G D S TO-252(H) The TO-252 package is universally preferred for all commercial- Industrial surface mount applications and suited for AC/DC converters. The through-hole version
0.25. Size:658K way-on
wml13n70em wmk13n70em wmm13n70em wmn13n70em wmp13n70em wmo13n70em.pdf
WML13 WMK13N7 3N70EM, W 70EM, WMM13N70EM WMN13 WMP13N7 3N70EM, W 70EM, WMO13N70EM 700V n Power MOSFET V 0.35 Super Junction Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is ate ch
0.26. Size:351K wuxi china
cs3n70a3h-g.pdf
Silicon N-Channel Power MOSFET R CS3N70 A3H-G General Description VDSS 700 V CS3N70 A3H-G the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
0.27. Size:709K convert
cs3n70f cs3n70p cs3n70u cs3n70d.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. CS3N70F,CS3N70P,CS3N70U,CS3N70D 700V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS3N70F TO-220F
0.28. Size:711K convert
cs3n70hf cs3n70hp cs3n70hu cs3n70hd.pdf
CS3N70HF, CS3N70HP nvert Suzhou Convert Semiconductor Co ., Ltd. CS3N70HU, CS3N70HD 700V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS3N70H
0.30. Size:611K cn scilicon
sfp065n70c3 sfb063n70c3.pdf
SFP065N70C3,SFB063N70C3 N-MOSFET 70V, 5.4m , 100A Features Product Summary Low on resistance V 70V DS Low gate charge R 5.4m DS(on) typ. Fast switching I 100A D High avalanche current Low reverse transfer capacitances 100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and
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