3N70 Todos los transistores

 

3N70 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 3N70
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.1 Ohm
   Paquete / Cubierta: TO-251 TO-252 TO-220F

 Búsqueda de reemplazo de MOSFET 3N70

 

3N70 Datasheet (PDF)

 ..1. Size:248K  utc
3n70.pdf

3N70
3N70

UNISONIC TECHNOLOGIES CO., LTD 3N70 Power MOSFET 3A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app

 0.1. Size:305K  1
ssh3n70 ssp3n70.pdf

3N70
3N70

 0.2. Size:248K  utc
3n70l-tf3-t 3n70g-tf3-t 3n70l-tm3-t 3n70g-tm3-t 3n70l-tn3-t 3n70g-tn3-t 3n70l-tn3-r 3n70g-tn3-r.pdf

3N70
3N70

UNISONIC TECHNOLOGIES CO., LTD 3N70 Power MOSFET 3A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app

 0.3. Size:260K  utc
3n70a.pdf

3N70
3N70

UNISONIC TECHNOLOGIES CO., LTD 3N70A Power MOSFET 700V, 3A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N70A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching appli

 0.4. Size:265K  utc
3n70k.pdf

3N70
3N70

UNISONIC TECHNOLOGIES CO., LTD 3N70K Power MOSFET 3A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N70K is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a

 0.5. Size:63K  ape
ap03n70i-hf.pdf

3N70
3N70

AP03N70I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching RDS(ON) 3.6 Simple Drive Requirement ID 3.3AG RoHS CompliantSDescriptionAP03N70 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applications. It provid

 0.6. Size:40K  ape
ap03n70h-h.pdf

3N70
3N70

AP03N70H/J-HPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Repetitive Avalanche Rated BVDSS 700VD Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5AG RoHS CompliantSDescriptionThe TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for AC

 0.7. Size:175K  ape
ap03n70i.pdf

3N70
3N70

AP03N70I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching RDS(ON) 3.6 Simple Drive Requirement ID4 3.3AG RoHS CompliantSDescriptionAP03N70 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-resistance a

 0.8. Size:171K  ape
ap03n70j-h.pdf

3N70
3N70

AP03N70H/J-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 700VD Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5AG RoHS CompliantSDescriptionAP03N70 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-resi

 0.9. Size:94K  ape
ap03n70hj-hf.pdf

3N70
3N70

AP03N70H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Speed RDS(ON) 3.6 Simple Drive Requirement ID 3.3AG RoHS CompliantSDescriptionGThe TO-252 package is widely preferred for all commercial-industrialDTO-252(H)Ssurface mount applications and suited f

 0.10. Size:103K  ape
ap03n70hj-h.pdf

3N70
3N70

AP03N70H/J-HRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5AG RoHS CompliantSDescriptionThe TO-252 package is widely preferred for all commercial-industrialsurface mount applications and suited for AC/DC converters

 0.11. Size:45K  ape
ap03n70i-h.pdf

3N70
3N70

AP03N70I-HPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Repetitive Avalanche Rated BVDSS 700VD Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5AG RoHS CompliantSDescriptionAP03N70 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applicat

 0.12. Size:61K  ape
ap03n70p-a.pdf

3N70
3N70

AP03N70P-APb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Repetitive Avalanche Rated BVDSS 650VD Fast Switching Speed RDS(ON) 3.6 Simple Drive Requirement ID 3.3AG RoHS CompliantSDescriptionAP03N70 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applicat

 0.13. Size:41K  ape
ap03n70p-h.pdf

3N70
3N70

AP03N70P-HPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Repetitive Avalanche Rated BVDSS 700VD Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5AG RoHS CompliantSDescriptionAP03N70 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applicat

 0.14. Size:60K  ape
ap03n70i-h-hf.pdf

3N70
3N70

AP03N70I-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5AG RoHS Compliant & Halogen-FreeSDescriptionAP03N70 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter

 0.15. Size:237K  ape
ap03n70h.pdf

3N70
3N70

AP03N70H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Speed RDS(ON) 3.6 Simple Drive Requirement ID 3.3AG RoHS CompliantSDescriptionAP03N70 series are from Advanced Power innovated design and siliconGDprocess technology to achieve the lowest possible on-r

 0.16. Size:97K  ape
ap03n70h-a-hf ap03n70j-a-hf.pdf

3N70
3N70

AP03N70H/J-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 3.6 Simple Drive Requirement ID 3.3AG RoHS Compliant & Halogen-FreeSDescriptionGThe TO-252 package is widely preferred for all commercial-industrialDTO-252(H)Ssurface mount

 0.17. Size:59K  ape
ap03n70i-a-hf.pdf

3N70
3N70

AP03N70I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching RDS(ON) 3.6 Simple Drive Requirement ID 3.3AG RoHS CompliantSDescriptionAP03N70 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applications.GD

 0.18. Size:64K  ape
ap03n70h-h-hf ap03n70j-h-hf.pdf

3N70
3N70

AP03N70H/J-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 700VD Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5AG RoHS CompliantSDescriptionThe TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DCGcon

 0.19. Size:202K  ape
ap03n70j.pdf

3N70
3N70

AP03N70H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Speed RDS(ON) 3.6 Simple Drive Requirement ID 3.3AG RoHS CompliantSDescriptionAP03N70 series are from Advanced Power innovated design and siliconGDprocess technology to achieve the lowest possible on-r

 0.20. Size:133K  samhop
sdu03n70 sdd03n70.pdf

3N70
3N70

GreenProduct SDU/D03N70SamHop Microelectronics corp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.700V 3A 3.9 @VGS=10V Suface Mount Package.DGSSDU SERIES SDD SERIES SDD SERIESTO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK)ORDERING INF

 0.21. Size:351K  crhj
cs3n70 a3h-g.pdf

3N70
3N70

Silicon N-Channel Power MOSFET R CS3N70 A3H-G General Description VDSS 700 V CS3N70 A3H-G the silicon N-channel Enhanced ID 3 A PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.22. Size:592K  samwin
swf13n70d.pdf

3N70
3N70

SW13N70D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 700V High ruggedness Low RDS(ON) (Typ 0.7)@VGS=10V ID : 13A Low Gate Charge (Typ 52nC) RDS(ON) : 0.7 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application: LED, TV-Power, Charger 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This pow

 0.23. Size:571K  silicon standard
ssm03n70gp-h.pdf

3N70
3N70

SSM03N70GP-HN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM03N70GP-H achieves fast switching performanceBVDSS 700Vwith low gate charge without a complex drive circuit. ItRDS(ON) 4.4is suitable for high voltage applications such as AC/DCconverters, SMPS and general off-line switching circuits.I 2.5AD Pb-free; RoHS-compliant TO-220The SSM03N70G

 0.24. Size:181K  silicon standard
ssm03n70gh ssm03n70gj.pdf

3N70
3N70

SSM03N70GH/GJN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY BVDSS 600VDRDS(ON) 3.6Repetitive Avalanche Rated ID 3.3AFast Switching Speed GSimple Drive Requirement SDESCRIPTION GDS TO-252(H)The TO-252 package is universally preferred for all commercial- Industrial surface mount applications and suited for AC/DC converters. The through-hole version

 0.25. Size:658K  way-on
wml13n70em wmk13n70em wmm13n70em wmn13n70em wmp13n70em wmo13n70em.pdf

3N70
3N70

WML13 WMK13N73N70EM, W 70EM, WMM13N70EM WMN13 WMP13N73N70EM, W 70EM, WMO13N70EM 700V n Power MOSFETV 0.35 Super JunctionDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate ch

 0.26. Size:351K  wuxi china
cs3n70a3h-g.pdf

3N70
3N70

Silicon N-Channel Power MOSFET R CS3N70 A3H-G General Description VDSS 700 V CS3N70 A3H-G the silicon N-channel Enhanced ID 3 A PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.27. Size:709K  convert
cs3n70f cs3n70p cs3n70u cs3n70d.pdf

3N70
3N70

nvertSuzhou Convert Semiconductor Co ., Ltd.CS3N70F,CS3N70P,CS3N70U,CS3N70D700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS3N70F TO-220F

 0.28. Size:711K  convert
cs3n70hf cs3n70hp cs3n70hu cs3n70hd.pdf

3N70
3N70

CS3N70HF, CS3N70HP nvertSuzhou Convert Semiconductor Co ., Ltd.CS3N70HU, CS3N70HD700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS3N70H

 0.29. Size:358K  cn hmsemi
hm3n70.pdf

3N70
3N70

N- MOS / N-CHANNEL POWER MOSFETN- MOS / N-CHANNEL POWER MOSFET N- MOS / N-CHANNEL POWER MOSFETN- MOS / N-CHANNEL POWER MOSFETRoHSRoHS RoHSRoHSFEATURESFEATURESFEATURESFEATURESLOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE

 0.30. Size:611K  cn scilicon
sfp065n70c3 sfb063n70c3.pdf

3N70
3N70

SFP065N70C3,SFB063N70C3 N-MOSFET 70V, 5.4m, 100AFeatures Product Summary Low on resistanceV 70V DS Low gate chargeR 5.4m DS(on) typ. Fast switchingI 100A D High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and

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