All MOSFET. 3N70 Datasheet

 

3N70 MOSFET. Datasheet pdf. Equivalent

Type Designator: 3N70

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 50 pF

Maximum Drain-Source On-State Resistance (Rds): 3.1 Ohm

Package: TO-251_TO-252_TO-220F

3N70 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

3N70 Datasheet (PDF)

1.1. ssm03n70gp-h.pdf Size:571K _upd-mosfet

3N70
3N70

SSM03N70GP-H N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM03N70GP-H achieves fast switching performance BVDSS 700V with low gate charge without a complex drive circuit. It RDS(ON) 4.4Ω is suitable for high voltage applications such as AC/DC converters, SMPS and general off-line switching circuits. I 2.5A D Pb-free; RoHS-compliant TO-220 The SSM03N70G

1.2. ssm03n70gh ssm03n70gj.pdf Size:181K _upd-mosfet

3N70
3N70

SSM03N70GH/GJ N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY BVDSS 600V D RDS(ON) 3.6Ω Repetitive Avalanche Rated ID 3.3A Fast Switching Speed G Simple Drive Requirement S DESCRIPTION G D S TO-252(H) The TO-252 package is universally preferred for all commercial- Industrial surface mount applications and suited for AC/DC converters. The through-hole version

 1.3. cs3n70a3h-g.pdf Size:351K _update_mosfet

3N70
3N70

Silicon N-Channel Power MOSFET R ○ CS3N70 A3H-G General Description: VDSS 700 V CS3N70 A3H-G the silicon N-channel Enhanced ID 3 A PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.4. 3n70k.pdf Size:265K _utc

3N70
3N70

UNISONIC TECHNOLOGIES CO., LTD 3N70K Power MOSFET 3A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N70K is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

 1.5. 3n70.pdf Size:248K _utc

3N70
3N70

UNISONIC TECHNOLOGIES CO., LTD 3N70 Power MOSFET 3A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applic

1.6. 3n70a.pdf Size:260K _utc

3N70
3N70

UNISONIC TECHNOLOGIES CO., LTD 3N70A Power MOSFET 700V, 3A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N70A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applicat

1.7. ap03n70j.pdf Size:202K _a-power

3N70
3N70

AP03N70H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 600V D ▼ Fast Switching Speed RDS(ON) 3.6Ω ▼ Simple Drive Requirement ID 3.3A G ▼ RoHS Compliant S Description AP03N70 series are from Advanced Power innovated design and silicon G D process technology to achieve the lowest possible on-r

1.8. ap03n70h-a-hf.pdf Size:97K _a-power

3N70
3N70

AP03N70H/J-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test BVDSS 650V D Ў Fast Switching Characteristic RDS(ON) 3.6? Ў Simple Drive Requirement ID 3.3A G Ў RoHS Compliant & Halogen-Free S Description G The TO-252 package is widely preferred for all commercial-industrial D TO-252(H) S surface mount applica

1.9. ap03n70j-h.pdf Size:171K _a-power

3N70
3N70

AP03N70H/J-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Rated BVDSS 700V D ▼ Fast Switching Speed RDS(ON) 4.4Ω ▼ Simple Drive Requirement ID 2.5A G ▼ RoHS Compliant S Description AP03N70 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resi

1.10. ap03n70i-h.pdf Size:45K _a-power

3N70
3N70

AP03N70I-H Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Repetitive Avalanche Rated BVDSS 700V D Ў Fast Switching Speed RDS(ON) 4.4? Ў Simple Drive Requirement ID 2.5A G Ў RoHS Compliant S Description AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.

1.11. ap03n70h-h-hf ap03n70j-h-hf.pdf Size:64K _a-power

3N70
3N70

AP03N70H/J-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Rated BVDSS 700V D ▼ Fast Switching Speed RDS(ON) 4.4Ω ▼ Simple Drive Requirement ID 2.5A G ▼ RoHS Compliant S Description The TO-252 package is widely preferred for all commercial- industrial surface mount applications and suited for AC/DC G con

1.12. ap03n70p-a.pdf Size:61K _a-power

3N70
3N70

AP03N70P-A Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Repetitive Avalanche Rated BVDSS 650V D Ў Fast Switching Speed RDS(ON) 3.6? Ў Simple Drive Requirement ID 3.3A G Ў RoHS Compliant S Description AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.TO-

1.13. ap03n70j-a-hf.pdf Size:97K _a-power

3N70
3N70

AP03N70H/J-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test BVDSS 650V D Ў Fast Switching Characteristic RDS(ON) 3.6? Ў Simple Drive Requirement ID 3.3A G Ў RoHS Compliant & Halogen-Free S Description G The TO-252 package is widely preferred for all commercial-industrial D TO-252(H) S surface mount applica

1.14. ap03n70h-h.pdf Size:40K _a-power

3N70
3N70

AP03N70H/J-H Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Repetitive Avalanche Rated BVDSS 700V D Ў Fast Switching Speed RDS(ON) 4.4? Ў Simple Drive Requirement ID 2.5A G Ў RoHS Compliant S Description The TO-252 package is universally preferred for all commercial- industrial surface mount applications and suited for AC/DC G

1.15. ap03n70i-a-hf.pdf Size:59K _a-power

3N70
3N70

AP03N70I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test BVDSS 650V D Ў Fast Switching RDS(ON) 3.6? Ў Simple Drive Requirement ID 3.3A G Ў RoHS Compliant S Description AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. G D S TO-22

1.16. ap03n70i-h-hf.pdf Size:60K _a-power

3N70
3N70

AP03N70I-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 700V D ▼ Fast Switching Speed RDS(ON) 4.4Ω ▼ Simple Drive Requirement ID 2.5A G ▼ RoHS Compliant & Halogen-Free S Description AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter

1.17. ap03n70p-h.pdf Size:41K _a-power

3N70
3N70

AP03N70P-H Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Repetitive Avalanche Rated BVDSS 700V D Ў Fast Switching Speed RDS(ON) 4.4? Ў Simple Drive Requirement ID 2.5A G Ў RoHS Compliant S Description AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.TO-

1.18. ap03n70hj-h.pdf Size:103K _a-power

3N70
3N70

AP03N70H/J-H RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test BVDSS 700V D Ў Fast Switching Speed RDS(ON) 4.4? Ў Simple Drive Requirement ID 2.5A G Ў RoHS Compliant S Description The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The G

1.19. ap03n70hj-hf.pdf Size:94K _a-power

3N70
3N70

AP03N70H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test BVDSS 600V D Ў Fast Switching Speed RDS(ON) 3.6? Ў Simple Drive Requirement ID 3.3A G Ў RoHS Compliant S Description G The TO-252 package is widely preferred for all commercial-industrial D TO-252(H) S surface mount applications and suited for AC/DC

1.20. ap03n70h.pdf Size:237K _a-power

3N70
3N70

AP03N70H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 600V D ▼ Fast Switching Speed RDS(ON) 3.6Ω ▼ Simple Drive Requirement ID 3.3A G ▼ RoHS Compliant S Description AP03N70 series are from Advanced Power innovated design and silicon G D process technology to achieve the lowest possible on-r

1.21. ap03n70i.pdf Size:175K _a-power

3N70
3N70

AP03N70I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 600V D ▼ Fast Switching RDS(ON) 3.6Ω ▼ Simple Drive Requirement ID4 3.3A G ▼ RoHS Compliant S Description AP03N70 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance a

1.22. ap03n70i-hf.pdf Size:63K _a-power

3N70
3N70

AP03N70I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test BVDSS 600V D Ў Fast Switching RDS(ON) 3.6? Ў Simple Drive Requirement ID 3.3A G Ў RoHS Compliant S Description AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. It provide G hi

1.23. sdu03n70 sdd03n70.pdf Size:133K _samhop

3N70
3N70

Green Product SDU/D03N70 SamHop Microelectronics corp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (Ω) Typ Rugged and reliable. 700V 3A 3.9 @VGS=10V Suface Mount Package. D G S SDU SERIES SDD SERIES SDD SERIES TO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK) ORDERING INF

1.24. cs3n70 a3h-g.pdf Size:351K _crhj

3N70
3N70

Silicon N-Channel Power MOSFET R ○ CS3N70 A3H-G General Description: VDSS 700 V CS3N70 A3H-G the silicon N-channel Enhanced ID 3 A PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Datasheet: 9N80 , 10N80 , 12N80 , 1N70Z , 2N70 , 2N70Z , 2N70ZL , 2N70K , J111 , 3N70A , 3N70K , 4N70 , 4N70K , 5N70K , 6N70 , 7N70 , 8N70 .

 
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