3N70
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 3N70
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 50
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 3
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 30
ns
Cossⓘ - Выходная емкость: 50
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3.1
Ohm
Тип корпуса:
TO-251
TO-252
TO-220F
- подбор MOSFET транзистора по параметрам
3N70
Datasheet (PDF)
..1. Size:248K utc
3n70.pdf 

UNISONIC TECHNOLOGIES CO., LTD 3N70 Power MOSFET 3A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app
0.2. Size:248K utc
3n70l-tf3-t 3n70g-tf3-t 3n70l-tm3-t 3n70g-tm3-t 3n70l-tn3-t 3n70g-tn3-t 3n70l-tn3-r 3n70g-tn3-r.pdf 

UNISONIC TECHNOLOGIES CO., LTD 3N70 Power MOSFET 3A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app
0.3. Size:260K utc
3n70a.pdf 

UNISONIC TECHNOLOGIES CO., LTD 3N70A Power MOSFET 700V, 3A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N70A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching appli
0.4. Size:265K utc
3n70k.pdf 

UNISONIC TECHNOLOGIES CO., LTD 3N70K Power MOSFET 3A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N70K is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a
0.5. Size:63K ape
ap03n70i-hf.pdf 

AP03N70I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching RDS(ON) 3.6 Simple Drive Requirement ID 3.3AG RoHS CompliantSDescriptionAP03N70 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applications. It provid
0.6. Size:40K ape
ap03n70h-h.pdf 

AP03N70H/J-HPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Repetitive Avalanche Rated BVDSS 700VD Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5AG RoHS CompliantSDescriptionThe TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for AC
0.7. Size:175K ape
ap03n70i.pdf 

AP03N70I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching RDS(ON) 3.6 Simple Drive Requirement ID4 3.3AG RoHS CompliantSDescriptionAP03N70 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-resistance a
0.8. Size:171K ape
ap03n70j-h.pdf 

AP03N70H/J-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 700VD Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5AG RoHS CompliantSDescriptionAP03N70 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-resi
0.9. Size:94K ape
ap03n70hj-hf.pdf 

AP03N70H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Speed RDS(ON) 3.6 Simple Drive Requirement ID 3.3AG RoHS CompliantSDescriptionGThe TO-252 package is widely preferred for all commercial-industrialDTO-252(H)Ssurface mount applications and suited f
0.10. Size:103K ape
ap03n70hj-h.pdf 

AP03N70H/J-HRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5AG RoHS CompliantSDescriptionThe TO-252 package is widely preferred for all commercial-industrialsurface mount applications and suited for AC/DC converters
0.11. Size:45K ape
ap03n70i-h.pdf 

AP03N70I-HPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Repetitive Avalanche Rated BVDSS 700VD Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5AG RoHS CompliantSDescriptionAP03N70 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applicat
0.12. Size:61K ape
ap03n70p-a.pdf 

AP03N70P-APb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Repetitive Avalanche Rated BVDSS 650VD Fast Switching Speed RDS(ON) 3.6 Simple Drive Requirement ID 3.3AG RoHS CompliantSDescriptionAP03N70 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applicat
0.13. Size:41K ape
ap03n70p-h.pdf 

AP03N70P-HPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Repetitive Avalanche Rated BVDSS 700VD Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5AG RoHS CompliantSDescriptionAP03N70 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applicat
0.14. Size:60K ape
ap03n70i-h-hf.pdf 

AP03N70I-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5AG RoHS Compliant & Halogen-FreeSDescriptionAP03N70 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter
0.15. Size:237K ape
ap03n70h.pdf 

AP03N70H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Speed RDS(ON) 3.6 Simple Drive Requirement ID 3.3AG RoHS CompliantSDescriptionAP03N70 series are from Advanced Power innovated design and siliconGDprocess technology to achieve the lowest possible on-r
0.16. Size:97K ape
ap03n70h-a-hf ap03n70j-a-hf.pdf 

AP03N70H/J-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 3.6 Simple Drive Requirement ID 3.3AG RoHS Compliant & Halogen-FreeSDescriptionGThe TO-252 package is widely preferred for all commercial-industrialDTO-252(H)Ssurface mount
0.17. Size:59K ape
ap03n70i-a-hf.pdf 

AP03N70I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching RDS(ON) 3.6 Simple Drive Requirement ID 3.3AG RoHS CompliantSDescriptionAP03N70 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applications.GD
0.18. Size:64K ape
ap03n70h-h-hf ap03n70j-h-hf.pdf 

AP03N70H/J-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 700VD Fast Switching Speed RDS(ON) 4.4 Simple Drive Requirement ID 2.5AG RoHS CompliantSDescriptionThe TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DCGcon
0.19. Size:202K ape
ap03n70j.pdf 

AP03N70H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Speed RDS(ON) 3.6 Simple Drive Requirement ID 3.3AG RoHS CompliantSDescriptionAP03N70 series are from Advanced Power innovated design and siliconGDprocess technology to achieve the lowest possible on-r
0.20. Size:133K samhop
sdu03n70 sdd03n70.pdf 

GreenProduct SDU/D03N70SamHop Microelectronics corp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.700V 3A 3.9 @VGS=10V Suface Mount Package.DGSSDU SERIES SDD SERIES SDD SERIESTO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK)ORDERING INF
0.21. Size:351K crhj
cs3n70 a3h-g.pdf 

Silicon N-Channel Power MOSFET R CS3N70 A3H-G General Description VDSS 700 V CS3N70 A3H-G the silicon N-channel Enhanced ID 3 A PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
0.22. Size:592K samwin
swf13n70d.pdf 

SW13N70D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 700V High ruggedness Low RDS(ON) (Typ 0.7)@VGS=10V ID : 13A Low Gate Charge (Typ 52nC) RDS(ON) : 0.7 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application: LED, TV-Power, Charger 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This pow
0.23. Size:571K silicon standard
ssm03n70gp-h.pdf 

SSM03N70GP-HN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM03N70GP-H achieves fast switching performanceBVDSS 700Vwith low gate charge without a complex drive circuit. ItRDS(ON) 4.4is suitable for high voltage applications such as AC/DCconverters, SMPS and general off-line switching circuits.I 2.5AD Pb-free; RoHS-compliant TO-220The SSM03N70G
0.24. Size:181K silicon standard
ssm03n70gh ssm03n70gj.pdf 

SSM03N70GH/GJN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY BVDSS 600VDRDS(ON) 3.6Repetitive Avalanche Rated ID 3.3AFast Switching Speed GSimple Drive Requirement SDESCRIPTION GDS TO-252(H)The TO-252 package is universally preferred for all commercial- Industrial surface mount applications and suited for AC/DC converters. The through-hole version
0.25. Size:658K way-on
wml13n70em wmk13n70em wmm13n70em wmn13n70em wmp13n70em wmo13n70em.pdf 

WML13 WMK13N73N70EM, W 70EM, WMM13N70EM WMN13 WMP13N73N70EM, W 70EM, WMO13N70EM 700V n Power MOSFETV 0.35 Super JunctionDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate ch
0.26. Size:351K wuxi china
cs3n70a3h-g.pdf 

Silicon N-Channel Power MOSFET R CS3N70 A3H-G General Description VDSS 700 V CS3N70 A3H-G the silicon N-channel Enhanced ID 3 A PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
0.27. Size:709K convert
cs3n70f cs3n70p cs3n70u cs3n70d.pdf 

nvertSuzhou Convert Semiconductor Co ., Ltd.CS3N70F,CS3N70P,CS3N70U,CS3N70D700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS3N70F TO-220F
0.28. Size:711K convert
cs3n70hf cs3n70hp cs3n70hu cs3n70hd.pdf 

CS3N70HF, CS3N70HP nvertSuzhou Convert Semiconductor Co ., Ltd.CS3N70HU, CS3N70HD700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS3N70H
0.29. Size:358K cn hmsemi
hm3n70.pdf 

N- MOS / N-CHANNEL POWER MOSFETN- MOS / N-CHANNEL POWER MOSFET N- MOS / N-CHANNEL POWER MOSFETN- MOS / N-CHANNEL POWER MOSFETRoHSRoHS RoHSRoHSFEATURESFEATURESFEATURESFEATURESLOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE
0.30. Size:611K cn scilicon
sfp065n70c3 sfb063n70c3.pdf 

SFP065N70C3,SFB063N70C3 N-MOSFET 70V, 5.4m, 100AFeatures Product Summary Low on resistanceV 70V DS Low gate chargeR 5.4m DS(on) typ. Fast switchingI 100A D High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and
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History: IRF241
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