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12N70 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 12N70


Polaridad de transistor: N


Disipación total del dispositivo (Pd): 225 W

Tensión drenaje-fuente (Vds): 700 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 12 A

Temperatura operativa máxima (Tj): 150 °C


Tiempo de elevación (tr): 115 nS

Conductancia de drenaje-sustrato (Cd): 200 pF

Resistencia drenaje-fuente RDS(on): 0.7 Ohm

Empaquetado / Estuche: TO-220, TO-220F, TO-220F1, TO-220F2

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12N70 Datasheet (PDF)

1.1. wff12n70s.pdf Size:580K _update_mosfet


WFF12N70S WFF12N70S WFF12N70S WFF12N70S 700V Super-Junction Power MOSFET 700V Super-Junction Power MOSFET 700V Super-Junction Power MOSFET 700V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg = 34nC) � 100% UIS tested � RoHS compliant � Maximum Junction Temperature Range(150℃) General Description Power MOSFET is fabricated using

1.2. qm12n70f.pdf Size:322K _update_mosfet


QM12N70F 機密 第 1 頁 2011-09-09 - 1 - N-Ch 700V Fast Switching MOSFETs General Description Product Summery The QM12N70F is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 700V 1Ω 12A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM12N70F meet

 1.3. ixta12n70x2 ixtp12n70x2 ixth12n70x2.pdf Size:344K _update-mosfet


Preliminary Technical Information X2-Class VDSS = 700V IXTA12N70X2 Power MOSFET ID25 = 12A IXTP12N70X2   RDS(on)    300m     IXTH12N70X2 N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25C to 150C 700 V VDGR TJ = 25C to 150C, RGS = 1M 700 V VGSS Continuous 30 V

1.4. 12n70.pdf Size:225K _utc


UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, a

 1.5. ixta12n70x2.pdf Size:257K _inchange_semiconductor


Isc N-Channel MOSFET Transistor IXTA12N70X2 ·FEATURES ·With TO-263(D2PAK) packaging ·Low gate charge ·High speed switching ·Low on-resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

1.6. cs12n70 a8h.pdf Size:222K _crhj


Silicon N-Channel Power MOSFET R ○ CS12N70 A8H VDSS 700 V General Description: ID 12 A CS12N70 A8H, the silicon N-channel Enhanced PD (TC=25℃) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.64 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

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