Аналог (замена) для 12N70

 

 

12N70 Datasheet (PDF)

1.1. wff12n70s.pdf Size:580K _update_mosfet

WFF12N70S WFF12N70S WFF12N70S WFF12N70S 700V Super-Junction Power MOSFET 700V Super-Junction Power MOSFET 700V Super-Junction Power MOSFET 700V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg = 34nC) � 100% UIS tested � RoHS compliant � Maximum Junction Temperature Range(150℃) General Description Power MOSFET is fabricated using

1.2. qm12n70f.pdf Size:322K _update_mosfet

QM12N70F 機密 第 1 頁 2011-09-09 - 1 - N-Ch 700V Fast Switching MOSFETs General Description Product Summery The QM12N70F is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 700V 1Ω 12A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM12N70F meet

 1.3. 12n70.pdf Size:225K _utc

UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, a

1.4. cs12n70 a8h.pdf Size:222K _crhj

Silicon N-Channel Power MOSFET R ○ CS12N70 A8H VDSS 700 V General Description： ID 12 A CS12N70 A8H, the silicon N-channel Enhanced PD (TC=25℃) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.64 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

     

 

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