All MOSFET. 12N70 Datasheet

 

12N70 MOSFET. Datasheet pdf. Equivalent

Type Designator: 12N70

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 225 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 115 nS

Drain-Source Capacitance (Cd): 200 pF

Maximum Drain-Source On-State Resistance (Rds): 0.7 Ohm

Package: TO-220_TO-220F_TO-220F1_TO-220F2

12N70 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

12N70 Datasheet (PDF)

1.1. wff12n70s.pdf Size:580K _update_mosfet

12N70
12N70

WFF12N70S WFF12N70S WFF12N70S WFF12N70S 700V Super-Junction Power MOSFET 700V Super-Junction Power MOSFET 700V Super-Junction Power MOSFET 700V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg = 34nC) � 100% UIS tested � RoHS compliant � Maximum Junction Temperature Range(150℃) General Description Power MOSFET is fabricated using

1.2. qm12n70f.pdf Size:322K _update_mosfet

12N70
12N70

QM12N70F 機密 第 1 頁 2011-09-09 - 1 - N-Ch 700V Fast Switching MOSFETs General Description Product Summery The QM12N70F is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 700V 1Ω 12A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM12N70F meet

 1.3. 12n70.pdf Size:225K _utc

12N70
12N70

UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, a

1.4. cs12n70 a8h.pdf Size:222K _crhj

12N70
12N70

Silicon N-Channel Power MOSFET R ○ CS12N70 A8H VDSS 700 V General Description: ID 12 A CS12N70 A8H, the silicon N-channel Enhanced PD (TC=25℃) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.64 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 
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