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18N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 18N65

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 390 W

Tensión drenaje-fuente |Vds|: 650 V

Tensión compuerta-fuente |Vgs|: 30 V

Corriente continua de drenaje |Id|: 18 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 60 nS

Conductancia de drenaje-sustrato (Cd): 280 pF

Resistencia drenaje-fuente RDS(on): 0.36 Ohm

Empaquetado / Estuche: TO-3P TO-247 TO-230

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18N65 Datasheet (PDF)

0.1. stl18n65m2.pdf Size:704K _st

18N65
18N65

STL18N65M2N-channel 650 V, 0.290 typ., 8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - preliminary dataFeaturesVDS @ Order codesTJmax RDS(on) max IDSTL18N65M2 715 V 0.365 8 A Extremely low gate charge123 Excellent output capacitance (Coss) profile4 100% avalanche testedPowerFLAT 5x6 HV Zener-protectedApplicatio

0.2. sti18n65m2 stp18n65m2.pdf Size:525K _st

18N65
18N65

STI18N65M2, STP18N65M2N-channel 650 V, 0.275 typ., 12 A MDmesh M2 Power MOSFET in IPAK and TO-220 packagesDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDTABTABSTI18N65M2650V 0.33 12 ASTP18N65M23 32211 Extremely low gate chargeI2PAK TO-220 Excellent output capacitance (Coss) profile 100% avalanche tested Zener-prote

 0.3. stf18n65m5 sti18n65m5 stp18n65m5 stw18n65m5.pdf Size:948K _st

18N65
18N65

STF18N65M5, STI18N65M5, STP18N65M5,STW18N65M5N-channel 650 V, 0.198 typ., 15 A MDmesh V Power MOSFET in TO-220FP, IPAK, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABVDSS @ RDS(on) Order code IDTJmax max3213STF18N65M5 21TO-220FPSTI18N65M5IPAK710 V

0.4. stl18n65m5.pdf Size:1535K _st

18N65
18N65

STL18N65M5N-channel 650 V, 0.215 typ., 15 A MDmesh V Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - preliminary dataFeaturesOrder code VDS RDS(on)max. IDSTL18N65M5 710 V 0.240 15 A(1)1. The value is rated according to Rthj-case and limited by package.1 Outstanding RDS(on)*area23 Extremely large avalanche performance4 Gate charge minimize

 0.5. stb18n65m5 std18n65m5.pdf Size:1015K _st

18N65
18N65

STB18N65M5, STD18N65M5N-channel 650 V, 0.198 typ., 15 A MDmesh V Power MOSFET in DPAK and DPAK packagesDatasheet production dataFeaturesVDSS @ RDS(on) Order codes IDTABTJmax maxTABSTB18N65M5710 V

0.6. stf18n65m2.pdf Size:795K _st

18N65
18N65

STF18N65M2N-channel 650 V, 0.275 typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesRDS(on) Order code VDS IDmaxSTF18N65M2 650 V 0.33 12 A Extremely low gate charge32 Excellent output capacitance (Coss) profile1 100% avalanche testedTO-220FP Zener-protectedApplications Switching applicationsF

0.7. 18n65.pdf Size:176K _utc

18N65
18N65

UNISONIC TECHNOLOGIES CO., LTD 18N65 Power MOSFET 18A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 18N65 uses UTCs advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) 0.5 @VGS =

0.8. aotf18n65l.pdf Size:359K _aosemi

18N65
18N65

AOTF18N65650V,18A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOTF18N65 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

0.9. aok18n65.pdf Size:443K _aosemi

18N65
18N65

AOK18N65650V,18A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOK18N65 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

0.10. aotf18n65.pdf Size:359K _aosemi

18N65
18N65

AOTF18N65650V,18A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOTF18N65 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

0.11. aok18n65l.pdf Size:443K _aosemi

18N65
18N65

AOK18N65650V,18A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOK18N65 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

0.12. sif18n65c.pdf Size:253K _sisemi

18N65
18N65

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF18N65CN- MOS / N-CHANNEL POWER MOSFET SIF18N65CN- MOS / N-CHA

0.13. aok18n65.pdf Size:378K _inchange_semiconductor

18N65
18N65

isc N-Channel MOSFET Transistor AOK18N65FEATURESDrain Current I = 18A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =0.39(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

0.14. stf18n65m5.pdf Size:185K _inchange_semiconductor

18N65
18N65

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STF18N65M5FEATURESHigher V ratingDSSExcellent switching performance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

0.15. std18n65m5.pdf Size:208K _inchange_semiconductor

18N65
18N65

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STD18N65M5FEATURESHigher V ratingDSSExcellent switching performance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

0.16. aotf18n65.pdf Size:252K _inchange_semiconductor

18N65
18N65

isc N-Channel MOSFET Transistor AOTF18N65FEATURESDrain Current I = 18A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =0.39(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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