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18N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 18N65

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 390 W

Tensión drenaje-fuente (Vds): 650 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 18 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 60 nS

Conductancia de drenaje-sustrato (Cd): 280 pF

Resistencia drenaje-fuente RDS(on): 0.36 Ohm

Empaquetado / Estuche: TO-3P_TO-247_TO-230

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18N65 Datasheet (PDF)

1.1. 18n65.pdf Size:176K _utc

18N65
18N65

UNISONIC TECHNOLOGIES CO., LTD 18N65 Power MOSFET 18A, 650V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 18N65 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ? FEATURES * RDS(ON) ? 0.5? @VGS = 10 V * Ul

1.2. aotf18n65l.pdf Size:359K _aosemi

18N65
18N65

AOTF18N65 650V,18A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOTF18N65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.39Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanch

1.3. aok18n65l.pdf Size:443K _aosemi

18N65
18N65

AOK18N65 650V,18A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOK18N65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.39Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

1.4. aok18n65.pdf Size:443K _aosemi

18N65
18N65

AOK18N65 650V,18A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOK18N65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.39Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

1.5. aotf18n65.pdf Size:359K _aosemi

18N65
18N65

AOTF18N65 650V,18A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOTF18N65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.39Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanch

1.6. sif18n65c.pdf Size:253K _sisemi

18N65
18N65

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF18N65C N- MOS / N-CHANNEL POWER MOSFET SIF18N65C N- MOS / N-CHA

Otros transistores... 7N65Z , 7N65K , 8N65 , 9N65 , 10N65 , 10N65Z , 10N65K , 15N65 , IRF460 , 20N65 , 22N65 , 1N65A , 1N65 , 2N65 , 2N65L , 2N65Z , 2N65K .

 


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