All MOSFET. 18N65 Datasheet

 

18N65 MOSFET. Datasheet pdf. Equivalent

Type Designator: 18N65

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 390 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 60 nS

Drain-Source Capacitance (Cd): 280 pF

Maximum Drain-Source On-State Resistance (Rds): 0.36 Ohm

Package: TO-3P_TO-247_TO-230

18N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

18N65 Datasheet (PDF)

1.1. stw18n65m5.pdf Size:948K _update

18N65
18N65

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in TO-220FP, I²PAK, TO-220 and TO-247 packages Datasheet — production data Features TAB VDSS @ RDS(on) Order code ID TJmax max 3 2 1 3 STF18N65M5 2 1 TO-220FP STI18N65M5 I²PAK 710 V < 0.22 Ω 15 A STP18N65M5 TAB STW18N65M5 ■ Worldwide best RDS(on) * area 3

1.2. sti18n65m5.pdf Size:948K _update

18N65
18N65

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in TO-220FP, I²PAK, TO-220 and TO-247 packages Datasheet — production data Features TAB VDSS @ RDS(on) Order code ID TJmax max 3 2 1 3 STF18N65M5 2 1 TO-220FP STI18N65M5 I²PAK 710 V < 0.22 Ω 15 A STP18N65M5 TAB STW18N65M5 ■ Worldwide best RDS(on) * area 3

 1.3. stf18n65m2.pdf Size:795K _update

18N65
18N65

STF18N65M2 N-channel 650 V, 0.275 Ω typ., 12 A MDmesh ™ M2 Power MOSFET in a TO-220FP package Datasheet - production data Features RDS(on) Order code VDS ID max STF18N65M2 650 V 0.33 Ω 12 A • Extremely low gate charge 3 2 • Excellent output capacitance (Coss) profile 1 • 100% avalanche tested TO-220FP • Zener-protected Applications • Switching applications F

1.4. sti18n65m2.pdf Size:525K _update

18N65
18N65

STI18N65M2, STP18N65M2 N-channel 650 V, 0.275 Ω typ., 12 A MDmesh™ M2 Power MOSFET in I²PAK and TO-220 packages Datasheet - production data Features Order code VDS RDS(on) max ID TAB TAB STI18N65M2 650V 0.33Ω 12 A STP18N65M2 3 3 2 2 1 1 • Extremely low gate charge I2PAK TO-220 • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-prote

 1.5. stf18n65m5.pdf Size:948K _update

18N65
18N65

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in TO-220FP, I²PAK, TO-220 and TO-247 packages Datasheet — production data Features TAB VDSS @ RDS(on) Order code ID TJmax max 3 2 1 3 STF18N65M5 2 1 TO-220FP STI18N65M5 I²PAK 710 V < 0.22 Ω 15 A STP18N65M5 TAB STW18N65M5 ■ Worldwide best RDS(on) * area 3

1.6. stl18n65m2.pdf Size:704K _update

18N65
18N65

STL18N65M2 N-channel 650 V, 0.290 Ω typ., 8 A MDmesh™ M2 Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - preliminary data Features VDS @ Order codes TJmax RDS(on) max ID STL18N65M2 715 V 0.365 Ω 8 A • Extremely low gate charge 1 2 3 • Excellent output capacitance (Coss) profile 4 • 100% avalanche tested PowerFLAT™ 5x6 HV • Zener-protected Applicatio

1.7. stl18n65m5.pdf Size:1535K _update

18N65
18N65

STL18N65M5 N-channel 650 V, 0.215 Ω typ., 15 A MDmesh™ V Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - preliminary data Features Order code VDS RDS(on)max. ID STL18N65M5 710 V 0.240 Ω 15 A(1) 1. The value is rated according to Rthj-case and limited by package. 1 • Outstanding RDS(on)*area 2 3 • Extremely large avalanche performance 4 • Gate charge minimize

1.8. std18n65m5.pdf Size:1015K _upd

18N65
18N65

STB18N65M5, STD18N65M5 N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in D²PAK and DPAK packages Datasheet — production data Features VDSS @ RDS(on) Order codes ID TAB TJmax max TAB STB18N65M5 710 V < 0.22 Ω 15 A 2 STD18N65M5 2 3 3 1 1 ■ Worldwide best RDS(on) * area D2PAK DPAK ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching per

1.9. stb18n65m5.pdf Size:1015K _upd

18N65
18N65

STB18N65M5, STD18N65M5 N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in D²PAK and DPAK packages Datasheet — production data Features VDSS @ RDS(on) Order codes ID TAB TJmax max TAB STB18N65M5 710 V < 0.22 Ω 15 A 2 STD18N65M5 2 3 3 1 1 ■ Worldwide best RDS(on) * area D2PAK DPAK ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching per

1.10. stp18n65m2.pdf Size:525K _upd-mosfet

18N65
18N65

STI18N65M2, STP18N65M2 N-channel 650 V, 0.275 Ω typ., 12 A MDmesh™ M2 Power MOSFET in I²PAK and TO-220 packages Datasheet - production data Features Order code VDS RDS(on) max ID TAB TAB STI18N65M2 650V 0.33Ω 12 A STP18N65M2 3 3 2 2 1 1 • Extremely low gate charge I2PAK TO-220 • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-prote

1.11. stp18n65m5.pdf Size:948K _upd-mosfet

18N65
18N65

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in TO-220FP, I²PAK, TO-220 and TO-247 packages Datasheet — production data Features TAB VDSS @ RDS(on) Order code ID TJmax max 3 2 1 3 STF18N65M5 2 1 TO-220FP STI18N65M5 I²PAK 710 V < 0.22 Ω 15 A STP18N65M5 TAB STW18N65M5 ■ Worldwide best RDS(on) * area 3

1.12. 18n65.pdf Size:176K _utc

18N65
18N65

UNISONIC TECHNOLOGIES CO., LTD 18N65 Power MOSFET 18A, 650V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 18N65 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ? FEATURES * RDS(ON) ? 0.5? @VGS = 10 V * Ul

1.13. aotf18n65l.pdf Size:359K _aosemi

18N65
18N65

AOTF18N65 650V,18A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOTF18N65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.39Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanch

1.14. aok18n65l.pdf Size:443K _aosemi

18N65
18N65

AOK18N65 650V,18A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOK18N65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.39Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

1.15. aok18n65.pdf Size:443K _aosemi

18N65
18N65

AOK18N65 650V,18A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOK18N65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.39Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

1.16. aotf18n65.pdf Size:359K _aosemi

18N65
18N65

AOTF18N65 650V,18A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOTF18N65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.39Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanch

1.17. sif18n65c.pdf Size:253K _sisemi

18N65
18N65

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF18N65C N- MOS / N-CHANNEL POWER MOSFET SIF18N65C N- MOS / N-CHA

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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