3N60Z Todos los transistores

UNISONIC TECHNOLOGIES CO., LTD 3N60Z Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-220F The UTC 3N60Z is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed

NDF03N60Z, NDP03N60Z, NDD03N60Z N-Channel Power MOSFET 600 V, 3.3 W Features http //onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche Tested VDSS RDS(on) (TYP) @ 1.2 A These Devices are Pb-Free and are RoHS Compliant 600 V 3.3 W ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) Rating Symbol NDF NDP NDD Unit N-Channel D (2) Drain-to-Source V

SFF23N60M Solid State Devices, Inc. SFF23N60Z 14701 Firestone Blvd * La Mirada, Ca 90638 Phone (562) 404-4474 * Fax (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER S DATA SHEET 15 AMP, 600 Volts, 320 m Avalanche Rated N-channel TO-254 TO-254Z MOSFET Features Advanced low gate charge process Lowest ON-resistance in the industry Av