3N60Z Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 3N60Z  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 34 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm

Encapsulados: TO-220F

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3N60Z datasheet

 ..1. Size:362K  utc
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3N60Z

UNISONIC TECHNOLOGIES CO., LTD 3N60Z Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-220F The UTC 3N60Z is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed

 0.1. Size:162K  onsemi
 ndf03n60z ndp03n60z ndd03n60z.pdf pdf_icon

3N60Z

NDF03N60Z, NDP03N60Z, NDD03N60Z N-Channel Power MOSFET 600 V, 3.3 W Features http //onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche Tested VDSS RDS(on) (TYP) @ 1.2 A These Devices are Pb-Free and are RoHS Compliant 600 V 3.3 W ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) Rating Symbol NDF NDP NDD Unit N-Channel D (2) Drain-to-Source V

 0.2. Size:164K  ssdi
 sff23n60m sff23n60z.pdf pdf_icon

3N60Z

SFF23N60M Solid State Devices, Inc. SFF23N60Z 14701 Firestone Blvd * La Mirada, Ca 90638 Phone (562) 404-4474 * Fax (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER S DATA SHEET 15 AMP, 600 Volts, 320 m Avalanche Rated N-channel TO-254 TO-254Z MOSFET Features Advanced low gate charge process Lowest ON-resistance in the industry Av

Otros transistores... 1N60, 1N60P, 1N60Z, 2N60L, 2N60, 2N60K, 3N60, 3N60A, IRFP460, 3N60K, 4N60, 4N60Z, 4N60K, 8N50H, 9N50, 10N50, 11N50