3N60Z Datasheet and Replacement
Type Designator: 3N60Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 10 nC
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 50 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO-220F
3N60Z substitution
3N60Z Datasheet (PDF)
3n60z.pdf

UNISONIC TECHNOLOGIES CO., LTD 3N60Z Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION 1TO-220FThe UTC 3N60Z is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed
ndf03n60z ndp03n60z ndd03n60z.pdf

NDF03N60Z, NDP03N60Z,NDD03N60ZN-Channel Power MOSFET600 V, 3.3 WFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche TestedVDSS RDS(on) (TYP) @ 1.2 A These Devices are Pb-Free and are RoHS Compliant600 V3.3 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol NDF NDP NDD UnitN-ChannelD (2)Drain-to-Source V
sff23n60m sff23n60z.pdf

SFF23N60M Solid State Devices, Inc. SFF23N60Z 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNERS DATA SHEET 15 AMP, 600 Volts, 320 m Avalanche Rated N-channel TO-254 TO-254Z MOSFET Features: Advanced low gate charge process Lowest ON-resistance in the industry Av
Datasheet: 1N60 , 1N60P , 1N60Z , 2N60L , 2N60 , 2N60K , 3N60 , 3N60A , IRFP460 , 3N60K , 4N60 , 4N60Z , 4N60K , 8N50H , 9N50 , 10N50 , 11N50 .
Keywords - 3N60Z MOSFET datasheet
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