15N50 Todos los transistores

 

15N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 15N50

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 170 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 150 nS

Conductancia de drenaje-sustrato (Cd): 250 pF

Resistencia drenaje-fuente RDS(on): 0.26 Ohm

Empaquetado / Estuche: TO-220F2

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15N50 Datasheet (PDF)

1.1. tmp15n50 tmpf15n50.pdf Size:343K _update

15N50
15N50

TMP15N50/TMPF15N50 TMP15N50G/TMPF15N50G VDSS = 550 V @Tjmax Features ID = 14A  Low gate charge RDS(on) = 0.44 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP15N50 / TMPF15N50 TO-220 / TO-220F TMP15N50 / TMPF15N50 RoHS TMP15N50G / TMPF15N50G

1.2. fdh15n50.pdf Size:181K _upd-mosfet

15N50
15N50

August 2003 FDH15N50 / FDP15N50 / FDB15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Features • Low Gate Charge Qg results in Simple Drive Switch Mode Power Supplies(SMPS), such as Requirement • PFC Boost • Improved Gate, Avalanche and High Reapplied dv/dt • Two-Switch Forward Converter Ruggedness • Single Switch Forward Converter • Reduced rDS(ON)

 1.3. sihb15n50e.pdf Size:200K _upd-mosfet

15N50
15N50

SiHB15N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.243 • Reduced switching and conduction losses Qg max. (nC) 66 • Low gate charge (Qg) Qgs (nC) 8 • Avalanche energy rated (UIS) Qgd (nC) 14 • Materi

1.4. siha15n50e.pdf Size:164K _upd-mosfet

15N50
15N50

SiHA15N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.243 • Reduced switching and conduction losses Qg max. (nC) 66 • Low gate charge (Qg) Qgs (nC) 8 • Avalanche energy rated (UIS) Qgd (nC) 14 • Materi

 1.5. fdp15n50.pdf Size:181K _upd-mosfet

15N50
15N50

August 2003 FDH15N50 / FDP15N50 / FDB15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Features • Low Gate Charge Qg results in Simple Drive Switch Mode Power Supplies(SMPS), such as Requirement • PFC Boost • Improved Gate, Avalanche and High Reapplied dv/dt • Two-Switch Forward Converter Ruggedness • Single Switch Forward Converter • Reduced rDS(ON)

1.6. tman15n50.pdf Size:485K _upd-mosfet

15N50
15N50

TMAN15N50 N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 500V 14.2A <0.44W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TO-3PN D G S Device Package Marking Remark TMAN15N50 TO-3PN TMAN15N50 RoHS Absolute Maximum Ratings Parameter Symbol TMAN15N50 Unit Drain-Source

1.7. sihp15n50e.pdf Size:158K _upd-mosfet

15N50
15N50

SiHP15N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.243 • Reduced switching and conduction losses Qg max. (nC) 66 • Low gate charge (Qg) Qgs (nC) 8 • Avalanche energy rated (UIS) Qgd (nC) 14 • Materi

1.8. af15n50.pdf Size:246K _upd-mosfet

15N50
15N50

 Data Sheet 50V N-Channel MOSFET AF15N50 Features General Description • Typ RDS(ON)=14.32m @ VGS=10V, ID=15A This N-Channel MOSFET has been designed • Typ RDS(ON)=16.36m @ VGS=4.5V, ID=15A specifically to improve the overall efficiency and to • RoHS Compliant minimize switch node ringing of DC-DC converters using either synchronous or conventional switching PWM

1.9. wvm15n50.pdf Size:23K _update_mosfet

15N50

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N50(MTM15N50) Power MOSFET(N-channel) Transistor Features: 1. It’s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of powe

1.10. tsm15n50ci.pdf Size:401K _update_mosfet

15N50
15N50

 TSM15N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(Ω) ID (A) 2. Drain 3. Source 500 0.44 @ VGS =10V 14 General Description The TSM15N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pro

1.11. kdb15n50.pdf Size:49K _update_mosfet

15N50
15N50

SMD Type MOSFET N-Channel SMPS Power MOSFET KDB15N50(FDB15N50) Features TO-263 Unit: mm Low Gate Charge Qg results in Simple Drive Requirement +0.2 4.57-0.2 +0.1 Improved Gate, Avalanche and High Reapplied dv/dt 1.27-0.1 Ruggedness Reduced rDS(ON) Reduced Miller Capacitance and Low Input Capacitance +0.1 0.1max 1.27-0.1 Improved Switching Speed with Low EMI +0.1 0.81-0.1 2.

1.12. ms15n50.pdf Size:397K _update-mosfet

15N50
15N50

MS15N50 N-Channel Enhancement Mode Power MOSFET Description The MS15N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simpl

1.13. mtm15n45 mtm15n50.pdf Size:200K _update-mosfet

15N50
15N50

 This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

1.14. fdh15n50 fdp15n50 fdb15n50.pdf Size:194K _fairchild_semi

15N50
15N50

August 2003 FDH15N50 / FDP15N50 / FDB15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Features Low Gate Charge Qg results in Simple Drive Switch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward Converter Ruggedness Single Switch Forward Converter Reduced rDS(ON) Flyback Conve

1.15. ixth15n50l2-ixtp15n50l2.pdf Size:133K _ixys

15N50
15N50

Linear L2TM Power VDSS = 500V IXTH15N50L2 MOSFET w/Extended ID25 = 15A IXTP15N50L2 ? ? RDS(on) ? 480m? ? ? ? ? ? ? FBSOA N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V G (TAB) D VDGR TJ = 25C to 150C, RGS = 1M? 500 V S VGSS Continuous 20 V TO-247 (IXTH) VGSM Transient 30 V ID25 TC = 25C15 A I

1.16. ixta15n50l2.pdf Size:167K _ixys

15N50
15N50

Linear L2TM VDSS = 500V IXTA15N50L2 Power MOSFETs ID25 = 15A IXTP15N50L2 ≤ Ω RDS(on) ≤ 480mΩ ≤ Ω ≤ Ω ≤ Ω w/ Extended FBSOA IXTH15N50L2 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS Continuous ±20 V

1.17. ixth15n45a ixth15n50a ixtm15n45a ixtm15n50a.pdf Size:65K _ixys

15N50



1.18. 15n50.pdf Size:232K _utc

15N50
15N50

UNISONIC TECHNOLOGIES CO., LTD 15N50 Power MOSFET 15A, 500V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 15N50 is an N-channel mode power MOSFET using UTC’s 1 advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and TO-220F2 superior switching performance. It also can withstand high energy pulse in

1.19. kf15n50n.pdf Size:63K _kec

15N50
15N50

KF15N50N SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast Q B N O K switching time, low on resistance, low gate charge and excellent DIM MILLIMETERS avalanche characteristics. It is mainly suitable for switching mode _ A + 15.60 0.20 _ B 4.80 + 0.20 power supplies. _

1.20. mtn15n50fp.pdf Size:282K _cystek

15N50
15N50

Spec. No. : C717FP Issued Date : 2013.08.27 CYStech Electronics Corp. Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS : 500V RDS(ON) : 0.38Ω(typ.) MTN15N50FP ID : 15A Description The MTN15N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

1.21. mtn15n50f3.pdf Size:333K _cystek

15N50
15N50

Spec. No. : C717F3 Issued Date : 2010.08.03 CYStech Electronics Corp. Revised Date : Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS : 500V RDS(ON) : 0.38Ω(typ.) MTN15N50F3 ID : 15A Description The MTN15N50F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc

1.22. mtn15n50e3.pdf Size:319K _cystek

15N50
15N50

Spec. No. : C717E3 Issued Date : 2010.08.03 CYStech Electronics Corp. Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS : 500V RDS(ON) : 0.38Ω(typ.) MTN15N50E3 ID : 15A Description The MTN15N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc

1.23. cs15n50 a8r.pdf Size:229K _crhj

15N50
15N50

Silicon N-Channel Power MOSFET R ○ CS15N50 A8R General Description: VDSS 500 V CS15N50 A8R, the silicon N-channel Enhanced ID 15 A PD(TC=25℃) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.3 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.24. cs15n50f a9r.pdf Size:231K _crhj

15N50
15N50

Silicon N-Channel Power MOSFET R ○ CS15N50F A9R General Description: VDSS 500 V CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, ID 15 A PD(TC=25℃) 70 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.3 Ω the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.25. cm15n50.pdf Size:123K _jdsemi

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15N50

R C1N0 M55 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆500V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1 .主要用途 主要用于电子镇流器、节能灯、 跑步机等功率开关电路 2 .主要特点 开关速度快 驱动简单,可并联使用 3 .封装

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