Аналог (замена) для 15N50

 

 

15N50 Datasheet (PDF)

1.1. mtm15n45 mtm15n50.pdf Size:200K _motorola

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1.2. fdh15n50 fdp15n50.pdf Size:181K _fairchild_semi

August 2003 FDH15N50 / FDP15N50 / FDB15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Features • Low Gate Charge Qg results in Simple Drive Switch Mode Power Supplies(SMPS), such as Requirement • PFC Boost • Improved Gate, Avalanche and High Reapplied dv/dt • Two-Switch Forward Converter Ruggedness • Single Switch Forward Converter • Reduced rDS(ON)

 1.3. fdh15n50 fdp15n50 fdb15n50.pdf Size:194K _fairchild_semi

August 2003 FDH15N50 / FDP15N50 / FDB15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Features • Low Gate Charge Qg results in Simple Drive Switch Mode Power Supplies(SMPS), such as Requirement • PFC Boost • Improved Gate, Avalanche and High Reapplied dv/dt • Two-Switch Forward Converter Ruggedness • Single Switch Forward Converter • Reduced rDS(ON)

1.4. sihb15n50e.pdf Size:200K _vishay

SiHB15N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.243 • Reduced switching and conduction losses Qg max. (nC) 66 • Low gate charge (Qg) Qgs (nC) 8 • Avalanche energy rated (UIS) Qgd (nC) 14 • Materi

 1.5. siha15n50e.pdf Size:164K _vishay

SiHA15N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.243 • Reduced switching and conduction losses Qg max. (nC) 66 • Low gate charge (Qg) Qgs (nC) 8 • Avalanche energy rated (UIS) Qgd (nC) 14 • Materi

1.6. sihp15n50e.pdf Size:158K _vishay

SiHP15N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.243 • Reduced switching and conduction losses Qg max. (nC) 66 • Low gate charge (Qg) Qgs (nC) 8 • Avalanche energy rated (UIS) Qgd (nC) 14 • Materi

1.7. ixth15n50l2-ixtp15n50l2.pdf Size:133K _ixys

Linear L2TM Power VDSS = 500V IXTH15N50L2 MOSFET w/Extended ID25 = 15A IXTP15N50L2 ≤ Ω RDS(on) ≤ 480mΩ ≤ Ω ≤ Ω ≤ Ω FBSOA N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V G (TAB) D VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V S VGSS Continuous ±20 V TO-247 (IXTH) VGSM Transient ±30

1.8. ixta15n50l2.pdf Size:167K _ixys

Linear L2TM VDSS = 500V IXTA15N50L2 Power MOSFETs ID25 = 15A IXTP15N50L2 ≤ Ω RDS(on) ≤ 480mΩ ≤ Ω ≤ Ω ≤ Ω w/ Extended FBSOA IXTH15N50L2 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS Continuous ±20 V

1.9. ixth15n45a ixth15n50a ixtm15n45a ixtm15n50a.pdf Size:65K _ixys



1.10. 15n50.pdf Size:232K _utc

UNISONIC TECHNOLOGIES CO., LTD 15N50 Power MOSFET 15A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 15N50 is an N-channel mode power MOSFET using UTC’s 1 advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and TO-220F2 superior switching performance. It also can withstand high energy puls

1.11. tsm15n50ci.pdf Size:401K _taiwansemi

 TSM15N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(Ω) ID (A) 2. Drain 3. Source 500 0.44 @ VGS =10V 14 General Description The TSM15N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pro

1.12. kf15n50n.pdf Size:63K _kec

KF15N50N SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast Q B N O K switching time, low on resistance, low gate charge and excellent DIM MILLIMETERS avalanche characteristics. It is mainly suitable for switching mode _ A + 15.60 0.20 _ B 4.80 + 0.20 power supplies. _

1.13. mtn15n50fp.pdf Size:282K _cystek

Spec. No. : C717FP Issued Date : 2013.08.27 CYStech Electronics Corp. Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS : 500V RDS(ON) : 0.38Ω(typ.) MTN15N50FP ID : 15A Description The MTN15N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

1.14. mtn15n50f3.pdf Size:333K _cystek

Spec. No. : C717F3 Issued Date : 2010.08.03 CYStech Electronics Corp. Revised Date : Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS : 500V RDS(ON) : 0.38Ω(typ.) MTN15N50F3 ID : 15A Description The MTN15N50F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc

1.15. mtn15n50e3.pdf Size:319K _cystek

Spec. No. : C717E3 Issued Date : 2010.08.03 CYStech Electronics Corp. Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS : 500V RDS(ON) : 0.38Ω(typ.) MTN15N50E3 ID : 15A Description The MTN15N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc

1.16. cs15n50 a8r.pdf Size:229K _crhj

Silicon N-Channel Power MOSFET R ○ CS15N50 A8R General Description： VDSS 500 V CS15N50 A8R, the silicon N-channel Enhanced ID 15 A PD(TC=25℃) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.3 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.17. cs15n50f a9r.pdf Size:231K _crhj

Silicon N-Channel Power MOSFET R ○ CS15N50F A9R General Description： VDSS 500 V CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, ID 15 A PD(TC=25℃) 70 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.3 Ω the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.18. cm15n50.pdf Size:123K _jdsemi

R C1N0 M55 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆500V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1 ．主要用途 主要用于电子镇流器、节能灯、 跑步机等功率开关电路 2 ．主要特点 开关速度快 驱动简单，可并联使用 3 ．封装

1.19. kdb15n50.pdf Size:49K _kexin

SMD Type MOSFET N-Channel SMPS Power MOSFET KDB15N50(FDB15N50) Features TO-263 Unit: mm Low Gate Charge Qg results in Simple Drive Requirement +0.2 4.57-0.2 +0.1 Improved Gate, Avalanche and High Reapplied dv/dt 1.27-0.1 Ruggedness Reduced rDS(ON) Reduced Miller Capacitance and Low Input Capacitance +0.1 0.1max 1.27-0.1 Improved Switching Speed with Low EMI +0.1 0.81-0.1 2.

1.20. ms15n50.pdf Size:397K _bruckewell

MS15N50 N-Channel Enhancement Mode Power MOSFET Description The MS15N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simpl

1.21. af15n50.pdf Size:246K _bcdsemi

 Data Sheet 50V N-Channel MOSFET AF15N50 Features General Description • Typ RDS(ON)=14.32m @ VGS=10V, ID=15A This N-Channel MOSFET has been designed • Typ RDS(ON)=16.36m @ VGS=4.5V, ID=15A specifically to improve the overall efficiency and to • RoHS Compliant minimize switch node ringing of DC-DC converters using either synchronous or conventional switching PWM

1.22. wvm15n50.pdf Size:23K _shaanxi

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N50(MTM15N50) Power MOSFET(N-channel) Transistor Features: 1. It’s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of powe

1.23. tman15n50.pdf Size:485K _trinnotech

TMAN15N50 N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 500V 14.2A <0.44W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TO-3PN D G S Device Package Marking Remark TMAN15N50 TO-3PN TMAN15N50 RoHS Absolute Maximum Ratings Parameter Symbol TMAN15N50 Unit Drain-Source

1.24. tmp15n50 tmpf15n50.pdf Size:343K _trinnotech

TMP15N50/TMPF15N50 TMP15N50G/TMPF15N50G VDSS = 550 V @Tjmax Features ID = 14A  Low gate charge RDS(on) = 0.44 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP15N50 / TMPF15N50 TO-220 / TO-220F TMP15N50 / TMPF15N50 RoHS TMP15N50G / TMPF15N50G

     

 

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