All MOSFET. 15N50 Datasheet

 

15N50 MOSFET. Datasheet pdf. Equivalent

Type Designator: 15N50

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 170 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 150 nS

Drain-Source Capacitance (Cd): 250 pF

Maximum Drain-Source On-State Resistance (Rds): 0.26 Ohm

Package: TO-220F2

15N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

15N50 Datasheet (PDF)

0.1. sth15n50 sth15n50fi stw15n50.pdf Size:336K _1

15N50
15N50

0.2. mtm15n45 mtm15n50.pdf Size:200K _motorola

15N50
15N50

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material C

 0.3. stw15n50.pdf Size:336K _st

15N50
15N50

0.4. fdh15n50 fdp15n50.pdf Size:181K _fairchild_semi

15N50
15N50

August 2003FDH15N50 / FDP15N50 / FDB15N5015A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFETApplications Features Low Gate Charge Qg results in Simple DriveSwitch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward ConverterRuggedness Single Switch Forward Converter Reduced rDS(ON)

 0.5. fdh15n50 fdp15n50 fdb15n50.pdf Size:194K _fairchild_semi

15N50
15N50

August 2003FDH15N50 / FDP15N50 / FDB15N5015A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFETApplications Features Low Gate Charge Qg results in Simple DriveSwitch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward ConverterRuggedness Single Switch Forward Converter Reduced rDS(ON)

0.6. sihb15n50e.pdf Size:200K _vishay

15N50
15N50

SiHB15N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.243 Reduced switching and conduction lossesQg max. (nC) 66 Low gate charge (Qg)Qgs (nC) 8 Avalanche energy rated (UIS)Qgd (nC) 14 Materi

0.7. siha15n50e.pdf Size:164K _vishay

15N50
15N50

SiHA15N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.243 Reduced switching and conduction lossesQg max. (nC) 66 Low gate charge (Qg)Qgs (nC) 8 Avalanche energy rated (UIS)Qgd (nC) 14 Materi

0.8. sihp15n50e.pdf Size:158K _vishay

15N50
15N50

SiHP15N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.243 Reduced switching and conduction lossesQg max. (nC) 66 Low gate charge (Qg)Qgs (nC) 8 Avalanche energy rated (UIS)Qgd (nC) 14 Materi

0.9. ixth15n50l2-ixtp15n50l2.pdf Size:133K _ixys

15N50
15N50

Linear L2TM Power VDSS = 500VIXTH15N50L2MOSFET w/Extended ID25 = 15AIXTP15N50L2 RDS(on) 480m FBSOAN-Channel Enhancement ModeAvalanche RatedTO-220 (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VG (TAB)DVDGR TJ = 25C to 150C, RGS = 1M 500 VSVGSS Continuous 20 VTO-247 (IXTH)VGSM Transient 30

0.10. ixta15n50l2.pdf Size:167K _ixys

15N50
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Linear L2TM VDSS = 500VIXTA15N50L2Power MOSFETs ID25 = 15AIXTP15N50L2 RDS(on) 480m w/ Extended FBSOAIXTH15N50L2N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C, RGS = 1M 500 VVGSS Continuous 20 V

0.11. ixth15n45a ixth15n50a ixtm15n45a ixtm15n50a.pdf Size:65K _ixys

15N50

0.12. 15n50.pdf Size:232K _utc

15N50
15N50

UNISONIC TECHNOLOGIES CO., LTD 15N50 Power MOSFET 15A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N50 is an N-channel mode power MOSFET using UTCs 1advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance andTO-220F2superior switching performance. It also can withstand high energy puls

0.13. tsm15n50ci.pdf Size:401K _taiwansemi

15N50
15N50

TSM15N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 0.44 @ VGS =10V 14 General Description The TSM15N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pro

0.14. kf15n50n.pdf Size:63K _kec

15N50
15N50

KF15N50NSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description AThis planar stripe MOSFET has better characteristics, such as fastQ BNO Kswitching time, low on resistance, low gate charge and excellentDIM MILLIMETERSavalanche characteristics. It is mainly suitable for switching mode _A +15.60 0.20_B4.80 + 0.20power supplies._

0.15. mtn15n50fp.pdf Size:282K _cystek

15N50
15N50

Spec. No. : C717FP Issued Date : 2013.08.27 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.38(typ.) MTN15N50FP ID : 15A Description The MTN15N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

0.16. mtn15n50f3.pdf Size:333K _cystek

15N50
15N50

Spec. No. : C717F3 Issued Date : 2010.08.03 CYStech Electronics Corp.Revised Date : Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.38(typ.) MTN15N50F3 ID : 15A Description The MTN15N50F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc

0.17. mtn15n50e3.pdf Size:319K _cystek

15N50
15N50

Spec. No. : C717E3 Issued Date : 2010.08.03 CYStech Electronics Corp.Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 500V RDS(ON) : 0.38(typ.) MTN15N50E3 ID : 15A Description The MTN15N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc

0.18. cs15n50 a8r.pdf Size:229K _crhj

15N50
15N50

Silicon N-Channel Power MOSFET R CS15N50 A8R General Description VDSS 500 V CS15N50 A8R, the silicon N-channel Enhanced ID 15 A PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

0.19. cs15n50f a9r.pdf Size:231K _crhj

15N50
15N50

Silicon N-Channel Power MOSFET R CS15N50F A9R General Description VDSS 500 V CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, ID 15 A PD(TC=25) 70 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.3 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

0.20. cm15n50.pdf Size:123K _jdsemi

15N50
15N50

RC1N0M55 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 500V N-Channel VDMOS RoHS 12 3

0.21. kdb15n50.pdf Size:49K _kexin

15N50
15N50

SMD Type MOSFETN-Channel SMPS Power MOSFETKDB15N50(FDB15N50)FeaturesTO-263Unit: mmLow Gate Charge Qg results in Simple Drive Requirement+0.24.57-0.2+0.1Improved Gate, Avalanche and High Reapplied dv/dt1.27-0.1RuggednessReduced rDS(ON)Reduced Miller Capacitance and Low Input Capacitance+0.10.1max1.27-0.1Improved Switching Speed with Low EMI+0.10.81-0.12.

0.22. ms15n50.pdf Size:397K _bruckewell

15N50
15N50

MS15N50 N-Channel Enhancement Mode Power MOSFET Description The MS15N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simpl

0.23. af15n50.pdf Size:246K _bcdsemi

15N50
15N50

Data Sheet 50V N-Channel MOSFET AF15N50 Features General Description Typ RDS(ON)=14.32m @ VGS=10V, ID=15A This N-Channel MOSFET has been designed Typ RDS(ON)=16.36m @ VGS=4.5V, ID=15A specifically to improve the overall efficiency and to RoHS Compliantminimize switch node ringing of DC-DC converters using either synchronous or conventional switching PWM

0.24. wvm15n50.pdf Size:23K _shaanxi

15N50

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N50(MTM15N50) Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of powe

0.25. tman15n50.pdf Size:485K _trinnotech

15N50
15N50

TMAN15N50 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 14.2A

0.26. tmp15n50 tmpf15n50.pdf Size:343K _trinnotech

15N50
15N50

TMP15N50/TMPF15N50TMP15N50G/TMPF15N50GVDSS = 550 V @TjmaxFeaturesID = 14A Low gate chargeRDS(on) = 0.44 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP15N50 / TMPF15N50 TO-220 / TO-220F TMP15N50 / TMPF15N50 RoHSTMP15N50G / TMPF15N50G

0.27. cs15n50f cs15n50p.pdf Size:403K _convert

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15N50

nvertSuzhou Convert Semiconductor Co ., Ltd.CS15N50F,CS15N50P500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS15N50F TO-220F CS15N50FCS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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