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16N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 16N50
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 62 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 150 nS
   Cossⓘ - Capacitancia de salida: 235 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.31 Ohm
   Paquete / Cubierta: TO-220F2 TO-220F1
 

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16N50 Datasheet (PDF)

 ..1. Size:182K  utc
16n50.pdf pdf_icon

16N50

UNISONIC TECHNOLOGIES CO., LTD 16N50 Preliminary Power MOSFET 16 A, 500 V N-CHANNEL POWER MOSFET DESCRIPTION 1TO-220F1The UTC 16N50 is an N-channel mode power MOSFET usingUTCs advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand

 ..2. Size:2028K  goford
16n50.pdf pdf_icon

16N50

GOFORD16N50500V N-Channel MOSFETGENERAL DESCRIPTIONVDSS RDS(ON) IDThis Power MOSFET is produced usingadvanced planar stripe DMOS technology.500V 0.38 16AThis advanced technology has beenespecially tailored to minimize on-stateresistance, provide superior switchingperformance, and withstand high energypulse in the avalanche and commutationmode. These devices are well

 0.1. Size:276K  motorola
mtv16n50e.pdf pdf_icon

16N50

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTV16N50E/DAdvance InformationMTV16N50ETMOS E-FET.Power Field Effect TransistorD3PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate16 AMPERES500 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 0.40 OHMscheme to provide enhanced voltageblocking capability

 0.2. Size:206K  international rectifier
irfb16n50kpbf.pdf pdf_icon

16N50

PD - 95619SMPS MOSFETIRFB16N50KPbFApplicationsl Switch Mode Power Supply (SMPS)HEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power SwitchingVDSS RDS(on) typ. IDl Hard Switched and High FrequencyCircuits500V 285m 17Al Lead-FreeBenefitsl Low Gate Charge Qg results in Simple DriveRequirementl Improved Gate, Avalanche and Dynamicdv/dt SDRuggedne

Otros transistores... 8N50H , 9N50 , 10N50 , 11N50 , 12N50 , 13N50 , 14N50 , 15N50 , IRFB4115 , 18N50 , 24N50 , 26N50 , UF830 , UF830Z , UF840 , UK3568 , UF450 .

History: ZXMD63P03X | 2SJ259 | IPB051NE8NG | 2SJ605-ZJ | APT1201R6BVFRG

 

 
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