16N50 Specs and Replacement
Type Designator: 16N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 62 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 235 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
16N50 substitution
- MOSFET ⓘ Cross-Reference Search
16N50 datasheet
16n50.pdf
UNISONIC TECHNOLOGIES CO., LTD 16N50 Preliminary Power MOSFET 16 A, 500 V N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-220F1 The UTC 16N50 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand ... See More ⇒
16n50.pdf
GOFORD 16N50 500V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe DMOS technology. 500V 0.38 16A This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well ... See More ⇒
mtv16n50e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTV16N50E/D Advance Information MTV16N50E TMOS E-FET. Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 16 AMPERES 500 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 0.40 OHM scheme to provide enhanced voltage blocking capability ... See More ⇒
irfb16n50kpbf.pdf
PD - 95619 SMPS MOSFET IRFB16N50KPbF Applications l Switch Mode Power Supply (SMPS) HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching VDSS RDS(on) typ. ID l Hard Switched and High Frequency Circuits 500V 285m 17A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt S D Ruggedne... See More ⇒
std16n50m2 stf16n50m2 stp16n50m2.pdf
STD16N50M2, STF16N50M2, STP16N50M2 N-channel 500 V, 0.24 typ.,13 A, MDmesh M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages Datasheet - preliminary data Features TAB 3 Order codes VDS @ TJmax RDS(on) max. ID 1 DPAK STD16N50M2 STF16N50M2 550 V 0.28 13 A STP16N50M2 TAB Extremely low gate charge Excellent output capacitance (Coss) profile 3 3 2 2 10... See More ⇒
stf16n50u.pdf
STF16N50U N-channel 500 V, 0.47 , 15 A TO-220FP UltraFAST MESH Power MOSFET Features VDSS @ RDS(on) Type ID Pw Tjmax. max. STF16N50U 550 V ... See More ⇒
fda16n50.pdf
April 2007 TM UniFET FDA16N50 500V N-Channel MOSFET Features Description 16.5A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 32 nC) stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially tailored to... See More ⇒
fdpf16n50 fdpf16n50t.pdf
November 2013 FDPF16N50 / FDPF16N50T N-Channel UniFETTM MOSFET 500 V, 16 A, 380 m Features Description RDS(on) = 380 m (Max.) @ VGS = 10 V, ID = 8 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 32 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (... See More ⇒
fda16n50ldtu.pdf
August 2014 FDA16N50LDTU N-Channel UniFETTM MOSFET 500 V, 16.5 A, 380 m Features Description RDS(on) = 310 m (Typ.) @ VGS = 10 V, ID = 8.3 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 32 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 20 pF) ... See More ⇒
fdp16n50u fdpf16n50ut.pdf
October 2009 UniFETTM FDP16N50U / FDPF16N50UT tm N-Channel MOSFET, FRFET 500V, 15A, 0.48 Features Description RDS(on) = 0.37 ( Typ.)@ VGS = 10V, ID = 7.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 32nC) DMOS technology. Low Crss ( Typ. 20pF) This advance tech... See More ⇒
fda16n50 f109.pdf
July 2007 TM UniFET FDA16N50 / FDA16N50_F109 500V N-Channel MOSFET Features Description 16.5A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 32 nC) stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especial... See More ⇒
fdp16n50.pdf
April 2007 TM UniFET FDP16N50 / FDPF16N50 500V N-Channel MOSFET Features Description 16A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 32 nC) stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially t... See More ⇒
fqaf16n50.pdf
April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 11.3A, 500V, RDS(on) = 0.32 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has be... See More ⇒
fqa16n50.pdf
April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16A, 500V, RDS(on) = 0.32 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been ... See More ⇒
fdp16n50 fdpf16n50.pdf
April 2007 TM UniFET FDP16N50 / FDPF16N50 500V N-Channel MOSFET Features Description 16A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 32 nC) stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially t... See More ⇒
sihp16n50c sihb16n50c sihf16n50c.pdf
SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 RDS(on) ( )VGS = 10 V 0.38 100 % Avalanche Tested Qg (Max.) (nC) 68 Gate Charge Improved Qgs (nC) 17.6 Trr/Qrr Improved Qgd (nC) 21.8 Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220A... See More ⇒
irfb16n50k irfb16n50kpbf.pdf
IRFB16N50K, SiHFB16N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 0.285 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 89 COMPLIANT Ruggedness Qgs (nC) 27 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 43 and Current Con... See More ⇒
sihg16n50c.pdf
SiHG16N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 V RDS(on) ( )VGS = 10 V 0.38 100 % Avalanche Tested Qg (Max.) (nC) 68 Gate Charge Improved Qgs (nC) 17.6 Trr/Qrr Improved Qgd (nC) 21.8 Configuration Single Compliant to RoHS Directive 2002/95/EC D TO-247AC G S D G S N-Channel MOSFET ... See More ⇒
sihb16n50c sihf16n50c sihp16n50c.pdf
SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 RDS(on) ( )VGS = 10 V 0.38 100 % Avalanche Tested Qg (Max.) (nC) 68 Gate Charge Improved Qgs (nC) 17.6 Trr/Qrr Improved Qgd (nC) 21.8 Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220A... See More ⇒
spp16n50c3 spi16n50c3 spa16n50c3 spp16n50c3 spi16n50c3 spa16n50c3 rev.3.2.pdf
... See More ⇒
spb16n50c3.pdf
SPB16N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.28 New revolutionary high voltage technology ID 16 A Ultra low gate charge PG-TO263 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPB16N50C3 PG-TO263 Q67040-S4642 16N50C3 Maximum Rating... See More ⇒
ixth16n50d2 ixtt16n50d2.pdf
Advance Technical Information Depletion Mode VDSX = 500V IXTH16N50D2 MOSFET ID(on) > 16A IXTT16N50D2 RDS(on) 240m N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSX TJ = 25 C to 150 C 500 V VDGX TJ = 25 C to 150 C, RGS = 1M 500 V VGSX Continuous 20 V TO-268 (IXTT) VGSM Transient 30 V PD TC = 2... See More ⇒
ixfa16n50p ixfh16n50p ixfp16n50p.pdf
IXFA 16N50P VDSS = 500 V PolarHVTM HiPerFET IXFH 16N50P ID25 = 16 A Power MOSFET IXFP 16N50P RDS(on) 400 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V ... See More ⇒
ixfc16n50p.pdf
IXFC 16N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 10 A Power MOSFET RDS(on) 450 m ISOPLUS220TM trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated ISOPLUS220TM (IXFC) Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25 C to 150 C 500 V VDGR T... See More ⇒
ixfa16n50p3 ixfh16n50p3 ixfp16n50p3.pdf
Advance Technical Information Polar3 TM HiPerFETTM VDSS = 500V IXFA16N50P3 Power MOSFETs ID25 = 16A IXFP16N50P3 RDS(on) 360m IXFH16N50P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 15... See More ⇒
ixta16n50p ixtp16n50p ixtq16n50p.pdf
IXTA 16N50P VDSS = 500 V PolarHVTM IXTP 16N50P ID25 = 16 A Power MOSFET IXTQ 16N50P RDS(on) 400 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V G VGS Continuous 30 V S VGSM Transient 40 V (TAB) ID25 TC = 25 C16 A... See More ⇒
fqaf16n50.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fdpf16n50ut.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fmh16n50e.pdf
FMH16N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V) ... See More ⇒
fmv16n50es.pdf
FMV16N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 ... See More ⇒
fmh16n50es.pdf
FMH16N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P (Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5... See More ⇒
fmp16n50e.pdf
FMP16N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V) ... See More ⇒
fmv16n50e.pdf
FMV16N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.... See More ⇒
fmb16n50e.pdf
SPECIFICATION Device Name Power MOSFET FMI16N50E (T-pack L) FMC16N50E (T-pack S) Type Name FMB16N50E (T-pack SJ) Spec. No. MS5F6867 Date July.-19-2007 Fuji Electric Device Technology Co.,Ltd. NAME DATE APPROVED Fuji Electric Device Technology Co., Ltd. DRAWN July.-19-'07 CHECKED July.-19-'07 MS5F6867 1 / 18 CHECKED July.-19-'07 H04-004-05 This m aterial and the inform a... See More ⇒
fmi16n50es.pdf
FMI16N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack (L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.... See More ⇒
fmc16n50es.pdf
FMC16N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack (S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.... See More ⇒
fmc16n50e.pdf
FMC16N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)... See More ⇒
fmp16n50es.pdf
FMP16N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5V... See More ⇒
fml16n50es.pdf
http //www.fujisemi.com FML16N50ES FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TFP 9.0 0.2 7.0 0.2 0.4 0.1 Lower R (on) characteristic DS 4 More controllable switching dv/dt by gate resistance 4 D Smaller V ringing waveform during switching GS Narrow... See More ⇒
fmi16n50e.pdf
FMI16N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)... See More ⇒
kf16n50f.pdf
KF16N50P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF16N50P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G correction and switching mode power supp... See More ⇒
aot16n50 aotf16n50.pdf
AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 16A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
aot16n50.pdf
AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 16A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
aotf16n50.pdf
AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 16A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
ap16n50p.pdf
AP16N50P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16A G RoHS Compliant & Halogen-Free S Description AP16N50 series are from Advanced Power innovated ... See More ⇒
ap16n50i-hf.pdf
AP16N50I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized... See More ⇒
ap16n50w-hf.pdf
AP16N50W-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized... See More ⇒
ap16n50p-hf.pdf
AP16N50P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized ... See More ⇒
ap16n50i.pdf
AP16N50I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID3 16A G RoHS Compliant & Halogen-Free S Description AP16N50 series are from Advanced Power innovated design and silicon process technology to achieve the lowest... See More ⇒
ap16n50w.pdf
AP16N50W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance a... See More ⇒
mdf16n50gth mdp16n50gth.pdf
MDP16N50G / MDF16N50G N-Channel MOSFET 500V, 16.0 A, 0.35 General Description Features VDS = 500V These N-channel MOSFET are produced using advanced VDS = 550V @ Tjmax MagnaChip s MOSFET Technology, which provides low on- ID = 16A @VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.35 @VGS = 10V quality. These devices are suitable d... See More ⇒
mdq16n50gth mdq16n50gtp.pdf
MDQ16N50G N-Channel MOSFET 500V, 16.5A, 0.35 General Description Features V = 500V DS These N-channel MOSFET are produced using advanced I = 16.5A @V = 10V D GS MagnaChip s MOSFET Technology, which provides low on- R 0.35 @V = 10V DS(ON) GS state resistance, high switching performance and excellent quality. Applications These devices are suitab... See More ⇒
msw16n50.pdf
MSW16N50 500V N-Channel MOSFET Description TO-247 This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics ... See More ⇒
msf16n50.pdf
MSF16N50 500V N-Channel MOSFET Description The MSF16N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features RDS(on) (Typical 0.33 )@VGS=10V Gate... See More ⇒
jfpc16n50c jffm16n50c.pdf
JFPC16N50C JFFM16N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 16A, 500V, RDS(on)typ. = 0.33 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc... See More ⇒
slp16n50c slf16n50c.pdf
SLP16N50C / SLF16N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 16A, 500V, RDS(on)typ. = 305m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 52nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching... See More ⇒
slp16n50s slf16n50s.pdf
SLP16N50S / SLF16N50S 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 16A, 500V, RDS(on) = 280m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 31nC) This advanced technology has been especially tailored - Low Crss ( typical 6.8pF) to minimize on-state resistance, provide superior switching - High rug... See More ⇒
tsf16n50mr.pdf
TSF16N50MR 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 16.0A,500V,Max.RDS(on)=0.4 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 32nC) minimize on-state resistance, provide superior switching High ruggedness performance, and withs... See More ⇒
fir16n50fg.pdf
FIR16N50FG CREAT BY ART N-Channel Power MOSFET PIN Connection TO-220F VDSS 500 V ID 16 A PD (TC=25 ) 70 W RDS(ON) 0.4 G D S Features Fast Switching g Schematic dia ram D Low ON Resistance(Rdson 0.40 ) Low Gate Charge (Typical Data 50nC) G Low Reverse transfer capacitances(Typical 25.5pF) 100% Single Pulse avalanche energy Test S Marking Diagram Ap... See More ⇒
hm16n50 hm16n50f.pdf
HM16N50 / HM16N50F 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 16A, 500V, RDS(on)typ. = 305m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 52nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching p... See More ⇒
spp16n50c3.pdf
isc N-Channel MOSFET Transistor SPP16N50C3 ISPP16N50C3 FEATURES Static drain-source on-resistance RDS(on) 280m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION New revolutionary high voltage technology Ultra low effective capacitance ABSOLUTE MAXIMUM ... See More ⇒
mdp16n50gth.pdf
isc N-Channel MOSFET Transistor MDP16N50GTH FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.35 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
mdq16n50gtp.pdf
isc N-Channel MOSFET Transistor MDQ16N50GTP FEATURES Drain Current I = 16.5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.35 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s... See More ⇒
spw16n50c3.pdf
isc N-Channel MOSFET Transistor SPW16N50C3 ISPW16N50C3 FEATURES Static drain-source on-resistance RDS(on) 280m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved Transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 50... See More ⇒
aot16n50.pdf
isc N-Channel MOSFET Transistor AOT16N50 FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.37 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
aotf16n50.pdf
isc N-Channel Mosfet Transistor AOTF16N50 FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Low ON Resistance R = 0.37 (Max) DS(on) Low leakage current Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for high efficiency switch mode power supply. ABSOLUTE... See More ⇒
Detailed specifications: 8N50H , 9N50 , 10N50 , 11N50 , 12N50 , 13N50 , 14N50 , 15N50 , P55NF06 , 18N50 , 24N50 , 26N50 , UF830 , UF830Z , UF840 , UK3568 , UF450 .
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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