16N50 MOSFET. Datasheet pdf. Equivalent

Type Designator: 16N50

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 62 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 16 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 150 nS

Drain-Source Capacitance (Cd): 235 pF

Maximum Drain-Source On-State Resistance (Rds): 0.31 Ohm

Package: TO-220F2_TO-220F1

16N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

16N50 Datasheet (PDF)

1.1. stf16n50m2.pdf Size:1255K _update

STD16N50M2, STF16N50M2, STP16N50M2 N-channel 500 V, 0.24 Ω typ.,13 A, MDmesh™ M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages Datasheet - preliminary data Features TAB 3 Order codes VDS @ TJmax RDS(on) max. ID 1 DPAK STD16N50M2 STF16N50M2 550 V 0.28 Ω 13 A STP16N50M2 TAB • Extremely low gate charge • Excellent output capacitance (Coss) profile 3 3 2 2 • 10

1.2. std16n50m2.pdf Size:1255K _upd

1.3. fmh16n50es.pdf Size:488K _upd-mosfet

FMH16N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P (Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2±0.5

1.4. fmp16n50es.pdf Size:477K _upd-mosfet

FMP16N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2±0.5V

1.5. fmb16n50e.pdf Size:429K _upd-mosfet

SPECIFICATION Device Name : Power MOSFET FMI16N50E (T-pack L) FMC16N50E (T-pack S) Type Name : FMB16N50E (T-pack SJ) Spec. No. : MS5F6867 Date : July.-19-2007 Fuji Electric Device Technology Co.,Ltd. NAME DATE APPROVED Fuji Electric Device Technology Co., Ltd. DRAWN July.-19-'07 CHECKED July.-19-'07 MS5F6867 1 / 18 CHECKED July.-19-'07 H04-004-05 This m aterial and the inform a

1.6. sihp16n50c.pdf Size:175K _upd-mosfet

SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 RDS(on) ()VGS = 10 V 0.38 • 100 % Avalanche Tested Qg (Max.) (nC) 68 • Gate Charge Improved Qgs (nC) 17.6 • Trr/Qrr Improved Qgd (nC) 21.8 Configuration Single • Compliant to RoHS Directive 2002/95/EC TO-220A

1.7. sihb16n50c sihf16n50c.pdf Size:175K _upd-mosfet

1.8. fmi16n50es.pdf Size:482K _upd-mosfet

FMI16N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack (L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2±0.

1.9. fmi16n50e.pdf Size:364K _upd-mosfet

FMI16N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.10. fqa16n50.pdf Size:749K _upd-mosfet

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 16A, 500V, RDS(on) = 0.32Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 60 nC) planar stripe, DMOS technology. • Low Crss ( typical 35 pF) This advanced technology has been

1.11. fdp16n50.pdf Size:432K _upd-mosfet

April 2007 TM UniFET FDP16N50 / FDPF16N50 500V N-Channel MOSFET Features Description • 16A, 500V, RDS(on) = 0.38Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 32 nC) stripe, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology has been especially t

1.12. fmh16n50e.pdf Size:422K _upd-mosfet

FMH16N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.13. fml16n50es.pdf Size:286K _upd-mosfet

http://www.fujisemi.com FML16N50ES FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TFP 9.0±0.2 7.0±0.2 0.4±0.1 Lower R (on) characteristic DS 4 More controllable switching dv/dt by gate resistance 4 D Smaller V ringing waveform during switching GS Narrow

1.14. fmv16n50es.pdf Size:476K _upd-mosfet

FMV16N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2±

1.15. irfb16n50k irfb16n50kpbf.pdf Size:165K _upd-mosfet

IRFB16N50K, SiHFB16N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (Ω)VGS = 10 V 0.285 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 89 COMPLIANT Ruggedness Qgs (nC) 27 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 43 and Current Con

1.16. stp16n50m2.pdf Size:1255K _upd-mosfet

1.17. msf16n50.pdf Size:426K _upd-mosfet

MSF16N50 500V N-Channel MOSFET Description The MSF16N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • RDS(on) (Typical 0.33Ω)@VGS=10V • Gate

1.18. fda16n50.pdf Size:824K _upd-mosfet

April 2007 TM UniFET FDA16N50 500V N-Channel MOSFET Features Description • 16.5A, 500V, RDS(on) = 0.38Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 32 nC) stripe, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology has been especially tailored to

1.19. sihg16n50c.pdf Size:142K _upd-mosfet

SiHG16N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 V RDS(on) (Ω)VGS = 10 V 0.38 • 100 % Avalanche Tested Qg (Max.) (nC) 68 • Gate Charge Improved Qgs (nC) 17.6 • Trr/Qrr Improved Qgd (nC) 21.8 Configuration Single • Compliant to RoHS Directive 2002/95/EC D TO-247AC G S D G S N-Channel MOSFET

1.20. fmc16n50e.pdf Size:367K _upd-mosfet

FMC16N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.21. fmp16n50e.pdf Size:414K _upd-mosfet

FMP16N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.22. fmc16n50es.pdf Size:484K _upd-mosfet

FMC16N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack (S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2±0.

1.23. msw16n50.pdf Size:871K _upd-mosfet

MSW16N50 500V N-Channel MOSFET Description TO-247 This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features • Originative New Design • Very Low Intrinsic Capacitances • Excellent Switching Characteristics •

1.24. fmv16n50e.pdf Size:358K _upd-mosfet

FMV16N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.

1.25. mtv16n50e.pdf Size:276K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTV16N50E/D Advance Information MTV16N50E TMOS E-FET.? Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET N�Channel Enhancement�Mode Silicon Gate 16 AMPERES 500 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 0.40 OHM scheme to provide enhanced voltage�blocking capability without de

1.26. fdp16n50 fdpf16n50.pdf Size:464K _fairchild_semi

April 2007 TM UniFET FDP16N50 / FDPF16N50 500V N-Channel MOSFET Features Description � 16A, 500V, RDS(on) = 0.38? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild�s proprietary, planar � Low gate charge ( typical 32 nC) stripe, DMOS technology. � Low Crss ( typical 20 pF) This advanced technology has been especially tailored to

1.27. fda16n50ldtu.pdf Size:497K _fairchild_semi

August 2014 FDA16N50LDTU N-Channel UniFETTM MOSFET 500 V, 16.5 A, 380 mΩ Features Description • RDS(on) = 310 mΩ (Typ.) @ VGS = 10 V, ID = 8.3 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 32 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low Crss (Typ. 20 pF)

1.28. fda16n50 f109.pdf Size:718K _fairchild_semi

July 2007 TM UniFET FDA16N50 / FDA16N50_F109 500V N-Channel MOSFET Features Description � 16.5A, 500V, RDS(on) = 0.38? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild�s proprietary, planar � Low gate charge ( typical 32 nC) stripe, DMOS technology. � Low Crss ( typical 20 pF) This advanced technology has been especially tailored t

1.29. fdpf16n50 fdpf16n50t.pdf Size:1433K _fairchild_semi

November 2013 FDPF16N50 / FDPF16N50T N-Channel UniFETTM MOSFET 500 V, 16 A, 380 mΩ Features Description • RDS(on) = 380 mΩ (Max.) @ VGS = 10 V, ID = 8 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 32 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low Crss (

1.30. fqaf16n50.pdf Size:719K _fairchild_semi

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect � 11.3A, 500V, RDS(on) = 0.32? @VGS = 10 V transistors are produced using Fairchild�s proprietary, � Low gate charge ( typical 60 nC) planar stripe, DMOS technology. � Low Crss ( typical 35 pF) This advanced technology has been especially

1.31. fdp16n50u fdpf16n50ut.pdf Size:241K _fairchild_semi

October 2009 UniFETTM FDP16N50U / FDPF16N50UT tm N-Channel MOSFET, FRFET 500V, 15A, 0.48? Features Description � RDS(on) = 0.37? ( Typ.)@ VGS = 10V, ID = 7.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild�s proprietary, planar stripe, � Low gate charge ( Typ. 32nC) DMOS technology. � Low Crss ( Typ. 20pF) This advance technology has been

1.32. irfb16n50kpbf.pdf Size:206K _international_rectifier

PD - 95619 SMPS MOSFET IRFB16N50KPbF Applications l Switch Mode Power Supply (SMPS) HEXFET� Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching VDSS RDS(on) typ. ID l Hard Switched and High Frequency Circuits 500V 285m 17A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt S D Ruggedness

1.33. spp16n50c3 spi16n50c3 spa16n50c3 rev[1].3.2.pdf Size:723K _infineon

SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS� Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.28 ? � New revolutionary high voltage technology ID 16 A � Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 � Periodic avalanche rated 2 � Extreme dv/dt rated 3 � Ultra low effective capacitances 2 3 2 1 1 P-TO220-3-31 � Improved transconductance P-TO220-3-1 � PG-TO-220-3-31;-3-

1.34. spb16n50c3 rev.2.4.pdf Size:1347K _infineon

SPB16N50C3 Cool MOS� Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.28 ? � New revolutionary high voltage technology ID 16 A � Ultra low gate charge PG-TO263 � Periodic avalanche rated � Extreme dv/dt rated � Ultra low effective capacitances � Improved transconductance Type Package Ordering Code Marking SPB16N50C3 PG-TO263 Q67040-S4642 16N50C3 Maximum Ratings Parameter Symbol

1.35. spw16n50c3 rev2[1].5 pcn.pdf Size:760K _infineon

VDS Tjmax ? � � G � � � � G

1.36. ixth16n50d2 ixtt16n50d2.pdf Size:199K _ixys

Advance Technical Information Depletion Mode VDSX = 500V IXTH16N50D2 MOSFET ID(on) > 16A IXTT16N50D2 ? ? RDS(on) ? 240m? ? ? ? ? ? ? N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSX TJ = 25�C to 150�C 500 V VDGX TJ = 25�C to 150�C, RGS = 1M? 500 V VGSX Continuous �20 V TO-268 (IXTT) VGSM Transient �30 V PD TC = 25�C 695 W G TJ - 55 ... +150

1.37. ixta16n50p ixtp16n50p ixtq16n50p.pdf Size:143K _ixys

IXTA 16N50P VDSS = 500 V PolarHVTM IXTP 16N50P ID25 = 16 A Power MOSFET IXTQ 16N50P RDS(on) ? ? ? ? ? 400 m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25�C to 150�C 500 V VDGR TJ = 25�C to 150�C; RGS = 1 M? 500 V G VGS Continuous �30 V S VGSM Transient �40 V (TAB) ID25 TC = 25�C16 A IDM TC = 25�C, pulse wid

1.38. ixfa16n50p ixfh16n50p ixfp16n50p.pdf Size:252K _ixys

IXFA 16N50P VDSS = 500 V PolarHVTM HiPerFET IXFH 16N50P ID25 = 16 A Power MOSFET IXFP 16N50P RDS(on) ? 400 m? ? ? ? ? ? ? ? ? ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25� C to 150� C 500 V VDGR TJ = 25� C to 150� C; RGS = 1 M? 500 V VGS Continuous �30 V VGSM Transient �4

1.39. ixfc16n50p.pdf Size:223K _ixys

IXFC 16N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 10 A Power MOSFET ? ? RDS(on) ? 450 m? ? ? ? ? ? ? ISOPLUS220TM ? trr ? 200 ns ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated ISOPLUS220TM (IXFC) Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25� C to 150� C 500 V VDGR TJ = 25� C to 150� C; RGS = 1 M? 500

1.40. ixfa16n50p3 ixfh16n50p3 ixfp16n50p3.pdf Size:173K _ixys

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 500V IXFA16N50P3 Power MOSFETs ID25 = 16A IXFP16N50P3 ≤ Ω RDS(on) ≤ Ω ≤ 360mΩ ≤ Ω ≤ Ω IXFH16N50P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 15

1.41. 16n50.pdf Size:182K _utc

UNISONIC TECHNOLOGIES CO., LTD 16N50 Preliminary Power MOSFET 16 A, 500 V N-CHANNEL POWER MOSFET ? DESCRIPTION 1 TO-220F1 The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high

1.42. kf16n50f.pdf Size:393K _kec

KF16N50P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF16N50P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G correction and switching mode power supp

1.43. aotf16n50.pdf Size:160K _aosemi

AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 16A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.37Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss a

1.44. aot16n50.pdf Size:160K _aosemi

1.45. ap16n50i-hf.pdf Size:58K _a-power

AP16N50I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low On-resistance BVDSS 500V Ў Simple Drive Requirement RDS(ON) 0.4? Ў Fast Switching Characteristic ID 16A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device

1.46. ap16n50p-hf.pdf Size:59K _a-power

AP16N50P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-resistance D BVDSS 500V ▼ Simple Drive Requirement RDS(ON) 0.4Ω ▼ Fast Switching Characteristic ID 16A G ▼ RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized

1.47. ap16n50p.pdf Size:151K _a-power

AP16N50P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-resistance D BVDSS 500V ▼ ▼ ▼ ▼ Simple Drive Requirement RDS(ON) 0.4Ω ▼ ▼ ▼ ▼ Fast Switching Characteristic ID 16A ▼ ▼ ▼ G ▼ RoHS Compliant & Halogen-Free ▼ ▼ ▼ S Description AP16N50 series are from Advanced Power innovated

1.48. ap16n50i.pdf Size:171K _a-power

AP16N50I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Low On-resistance BVDSS 500V ▼ Simple Drive Requirement RDS(ON) 0.4Ω ▼ Fast Switching Characteristic ID3 16A G ▼ RoHS Compliant & Halogen-Free S Description AP16N50 series are from Advanced Power innovated design and silicon process technology to achieve the lowest

1.49. ap16n50w-hf.pdf Size:59K _a-power

AP16N50W-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Low On-resistance BVDSS 500V ▼ Simple Drive Requirement RDS(ON) 0.4Ω ▼ Fast Switching Characteristic ID 16A G ▼ RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized

1.50. ap16n50w.pdf Size:58K _a-power

AP16N50W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low On-resistance BVDSS 500V Ў Simple Drive Requirement RDS(ON) 0.4? Ў Fast Switching Characteristic ID 16A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost

1.51. 16n50.pdf Size:2028K _goford

GOFORD 16N50 500V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe DMOS technology. 500V 0.38Ω 16A This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well

1.52. mdq16n50gtp.pdf Size:813K _magnachip

MDQ16N50G N-Channel MOSFET 500V, 16.5A, 0.35Ω General Description Features  V = 500V DS These N-channel MOSFET are produced using advanced  I = 16.5A @V = 10V D GS MagnaChip’s MOSFET Technology, which provides low on-  R ≤ 0.35Ω @V = 10V DS(ON) GS state resistance, high switching performance and excellent quality. Applications These devices are suitab

1.53. mdq16n50gth.pdf Size:813K _magnachip

1.54. mdp16n50gth.pdf Size:1026K _magnachip

MDP16N50G / MDF16N50G N-Channel MOSFET 500V, 16.0 A, 0.35Ω General Description Features VDS = 500V These N-channel MOSFET are produced using advanced VDS = 550V @ Tjmax MagnaChip’s MOSFET Technology, which provides low on- ID = 16A @VGS = 10V state resistance, high switching performance and excellent RDS(ON) ≤ 0.35Ω @VGS = 10V quality. These devices are suitable d

1.55. mdf16n50gth.pdf Size:1026K _magnachip