Справочник MOSFET. 16N50

 

16N50 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 16N50
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 62 W
   Предельно допустимое напряжение сток-исток |Uds|: 500 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 16 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 32 nC
   Время нарастания (tr): 150 ns
   Выходная емкость (Cd): 235 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.31 Ohm
   Тип корпуса: TO-220F2 TO-220F1

 Аналог (замена) для 16N50

 

 

16N50 Datasheet (PDF)

 ..1. Size:182K  utc
16n50.pdf

16N50
16N50

UNISONIC TECHNOLOGIES CO., LTD 16N50 Preliminary Power MOSFET 16 A, 500 V N-CHANNEL POWER MOSFET DESCRIPTION 1TO-220F1The UTC 16N50 is an N-channel mode power MOSFET usingUTCs advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand

 ..2. Size:2028K  goford
16n50.pdf

16N50
16N50

GOFORD16N50500V N-Channel MOSFETGENERAL DESCRIPTIONVDSS RDS(ON) IDThis Power MOSFET is produced usingadvanced planar stripe DMOS technology.500V 0.38 16AThis advanced technology has beenespecially tailored to minimize on-stateresistance, provide superior switchingperformance, and withstand high energypulse in the avalanche and commutationmode. These devices are well

 0.1. Size:276K  motorola
mtv16n50e.pdf

16N50
16N50

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTV16N50E/DAdvance InformationMTV16N50ETMOS E-FET.Power Field Effect TransistorD3PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate16 AMPERES500 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 0.40 OHMscheme to provide enhanced voltageblocking capability

 0.2. Size:206K  international rectifier
irfb16n50kpbf.pdf

16N50
16N50

PD - 95619SMPS MOSFETIRFB16N50KPbFApplicationsl Switch Mode Power Supply (SMPS)HEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power SwitchingVDSS RDS(on) typ. IDl Hard Switched and High FrequencyCircuits500V 285m 17Al Lead-FreeBenefitsl Low Gate Charge Qg results in Simple DriveRequirementl Improved Gate, Avalanche and Dynamicdv/dt SDRuggedne

 0.3. Size:1255K  st
std16n50m2 stf16n50m2 stp16n50m2.pdf

16N50
16N50

STD16N50M2, STF16N50M2, STP16N50M2N-channel 500 V, 0.24 typ.,13 A, MDmesh M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packagesDatasheet - preliminary dataFeaturesTAB3Order codes VDS @ TJmax RDS(on) max. ID1DPAKSTD16N50M2STF16N50M2 550 V 0.28 13 ASTP16N50M2TAB Extremely low gate charge Excellent output capacitance (Coss) profile3322 10

 0.4. Size:687K  st
stf16n50u.pdf

16N50
16N50

STF16N50UN-channel 500 V, 0.47 , 15 A TO-220FPUltraFAST MESH Power MOSFETFeaturesVDSS @ RDS(on) Type ID PwTjmax. max.STF16N50U 550 V

 0.5. Size:824K  fairchild semi
fda16n50.pdf

16N50
16N50

April 2007TMUniFETFDA16N50500V N-Channel MOSFETFeatures Description 16.5A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 32 nC)stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored to

 0.6. Size:1433K  fairchild semi
fdpf16n50 fdpf16n50t.pdf

16N50
16N50

November 2013FDPF16N50 / FDPF16N50T N-Channel UniFETTM MOSFET500 V, 16 A, 380 mFeatures Description RDS(on) = 380 m (Max.) @ VGS = 10 V, ID = 8 A UniFETTM MOSFET is Fairchild Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 32 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (

 0.7. Size:497K  fairchild semi
fda16n50ldtu.pdf

16N50
16N50

August 2014FDA16N50LDTUN-Channel UniFETTM MOSFET500 V, 16.5 A, 380 mFeatures Description RDS(on) = 310 m (Typ.) @ VGS = 10 V, ID = 8.3 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 32 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 20 pF)

 0.8. Size:241K  fairchild semi
fdp16n50u fdpf16n50ut.pdf

16N50
16N50

October 2009UniFETTMFDP16N50U / FDPF16N50UTtmN-Channel MOSFET, FRFET500V, 15A, 0.48Features Description RDS(on) = 0.37 ( Typ.)@ VGS = 10V, ID = 7.5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 32nC)DMOS technology. Low Crss ( Typ. 20pF)This advance tech

 0.9. Size:718K  fairchild semi
fda16n50 f109.pdf

16N50
16N50

July 2007TMUniFETFDA16N50 / FDA16N50_F109500V N-Channel MOSFETFeatures Description 16.5A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 32 nC)stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especial

 0.10. Size:432K  fairchild semi
fdp16n50.pdf

16N50
16N50

April 2007TMUniFETFDP16N50 / FDPF16N50500V N-Channel MOSFETFeatures Description 16A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 32 nC)stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially t

 0.11. Size:719K  fairchild semi
fqaf16n50.pdf

16N50
16N50

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 11.3A, 500V, RDS(on) = 0.32 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has be

 0.12. Size:749K  fairchild semi
fqa16n50.pdf

16N50
16N50

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 16A, 500V, RDS(on) = 0.32 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been

 0.13. Size:464K  fairchild semi
fdp16n50 fdpf16n50.pdf

16N50
16N50

April 2007TMUniFETFDP16N50 / FDPF16N50500V N-Channel MOSFETFeatures Description 16A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 32 nC)stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially t

 0.14. Size:292K  vishay
sihp16n50c sihb16n50c sihf16n50c.pdf

16N50
16N50

SiHP16N50C, SiHB16N50C, SiHF16N50Cwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit Ron x QgVDS (V) at TJ max. 560RDS(on) ()VGS = 10 V 0.38 100 % Avalanche TestedQg (Max.) (nC) 68 Gate Charge ImprovedQgs (nC) 17.6 Trr/Qrr ImprovedQgd (nC) 21.8Configuration Single Compliant to RoHS Directive 2002/95/ECTO-220A

 0.15. Size:165K  vishay
irfb16n50k irfb16n50kpbf.pdf

16N50
16N50

IRFB16N50K, SiHFB16N50KVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.285RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 89 COMPLIANTRuggednessQgs (nC) 27 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 43and CurrentCon

 0.16. Size:142K  vishay
sihg16n50c.pdf

16N50
16N50

SiHG16N50CVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit Ron x QgVDS (V) at TJ max. 560 VRDS(on) ()VGS = 10 V 0.38 100 % Avalanche TestedQg (Max.) (nC) 68 Gate Charge ImprovedQgs (nC) 17.6 Trr/Qrr ImprovedQgd (nC) 21.8Configuration Single Compliant to RoHS Directive 2002/95/ECDTO-247ACGSDGSN-Channel MOSFET

 0.17. Size:175K  vishay
sihb16n50c sihf16n50c sihp16n50c.pdf

16N50
16N50

SiHP16N50C, SiHB16N50C, SiHF16N50Cwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit Ron x QgVDS (V) at TJ max. 560RDS(on) ()VGS = 10 V 0.38 100 % Avalanche TestedQg (Max.) (nC) 68 Gate Charge ImprovedQgs (nC) 17.6 Trr/Qrr ImprovedQgd (nC) 21.8Configuration Single Compliant to RoHS Directive 2002/95/ECTO-220A

 0.18. Size:723K  infineon
spp16n50c3 spi16n50c3 spa16n50c3 spp16n50c3 spi16n50c3 spa16n50c3 rev.3.2.pdf

16N50
16N50

SPP16N50C3SPI16N50C3, SPA16N50C3Cool MOS Power TransistorVDS @ Tjmax 560 VFeatureRDS(on) 0.28 New revolutionary high voltage technologyID 16 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 Ultra low effective capacitances2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1

 0.19. Size:760K  infineon
spw16n50c3.pdf

16N50
16N50

VDS Tjmax G G

 0.20. Size:1347K  infineon
spb16n50c3.pdf

16N50
16N50

SPB16N50C3Cool MOS Power TransistorVDS @ Tjmax 560 VFeatureRDS(on) 0.28 New revolutionary high voltage technologyID 16 A Ultra low gate chargePG-TO263 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPB16N50C3 PG-TO263 Q67040-S4642 16N50C3Maximum Rating

 0.21. Size:199K  ixys
ixth16n50d2 ixtt16n50d2.pdf

16N50
16N50

Advance Technical InformationDepletion Mode VDSX = 500VIXTH16N50D2MOSFET ID(on) > 16AIXTT16N50D2 RDS(on) 240m N-ChannelTO-247 (IXTH)GSymbol Test Conditions Maximum RatingsDD (Tab)SVDSX TJ = 25C to 150C 500 VVDGX TJ = 25C to 150C, RGS = 1M 500 VVGSX Continuous 20 VTO-268 (IXTT)VGSM Transient 30 VPD TC = 2

 0.22. Size:252K  ixys
ixfa16n50p ixfh16n50p ixfp16n50p.pdf

16N50
16N50

IXFA 16N50P VDSS = 500 VPolarHVTM HiPerFETIXFH 16N50P ID25 = 16 APower MOSFETIXFP 16N50P RDS(on) 400 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 V

 0.23. Size:223K  ixys
ixfc16n50p.pdf

16N50
16N50

IXFC 16N50P VDSS = 500 VPolarHVTM HiPerFETID25 = 10 APower MOSFET RDS(on) 450 m ISOPLUS220TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeFast Intrinsic DiodeAvalanche RatedISOPLUS220TM (IXFC)Symbol Test Conditions Maximum RatingsE153432VDSS TJ = 25 C to 150 C 500 VVDGR T

 0.24. Size:173K  ixys
ixfa16n50p3 ixfh16n50p3 ixfp16n50p3.pdf

16N50
16N50

Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 500VIXFA16N50P3Power MOSFETs ID25 = 16AIXFP16N50P3 RDS(on) 360m IXFH16N50P3N-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXFP)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 15

 0.25. Size:143K  ixys
ixta16n50p ixtp16n50p ixtq16n50p.pdf

16N50
16N50

IXTA 16N50P VDSS = 500 VPolarHVTMIXTP 16N50P ID25 = 16 APower MOSFETIXTQ 16N50P RDS(on) 400 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-263 (IXTA)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VGVGS Continuous 30 VSVGSM Transient 40 V(TAB)ID25 TC = 25C16 A

 0.26. Size:993K  onsemi
fqaf16n50.pdf

16N50
16N50

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.27. Size:1542K  onsemi
fdpf16n50ut.pdf

16N50
16N50

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.28. Size:422K  fuji
fmh16n50e.pdf

16N50
16N50

FMH16N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P(Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

 0.29. Size:476K  fuji
fmv16n50es.pdf

16N50
16N50

FMV16N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.2

 0.30. Size:488K  fuji
fmh16n50es.pdf

16N50
16N50

FMH16N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P (Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5

 0.31. Size:414K  fuji
fmp16n50e.pdf

16N50
16N50

FMP16N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

 0.32. Size:358K  fuji
fmv16n50e.pdf

16N50
16N50

FMV16N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.

 0.33. Size:429K  fuji
fmb16n50e.pdf

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SPECIFICATIONDevice Name : Power MOSFETFMI16N50E (T-pack L)FMC16N50E (T-pack S)Type Name : FMB16N50E (T-pack SJ)Spec. No. : MS5F6867Date :July.-19-2007Fuji Electric Device Technology Co.,Ltd.NAMEDATE APPROVEDFuji Electric Device Technology Co., Ltd.DRAWN July.-19-'07CHECKED July.-19-'07MS5F6867 1 / 18CHECKED July.-19-'07H04-004-05This m aterial and the inform a

 0.34. Size:482K  fuji
fmi16n50es.pdf

16N50
16N50

FMI16N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack (L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.

 0.35. Size:484K  fuji
fmc16n50es.pdf

16N50
16N50

FMC16N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack (S)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.

 0.36. Size:367K  fuji
fmc16n50e.pdf

16N50
16N50

FMC16N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(S)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

 0.37. Size:477K  fuji
fmp16n50es.pdf

16N50
16N50

FMP16N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5V

 0.38. Size:286K  fuji
fml16n50es.pdf

16N50
16N50

http://www.fujisemi.comFML16N50ES FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTFP9.00.27.00.2 0.40.1Lower R (on) characteristicDS4More controllable switching dv/dt by gate resistance4 DSmaller V ringing waveform during switchingGSNarrow

 0.39. Size:364K  fuji
fmi16n50e.pdf

16N50
16N50

FMI16N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

 0.40. Size:393K  kec
kf16n50f.pdf

16N50
16N50

KF16N50P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF16N50PAThis planar stripe MOSFET has better characteristics, such as fastOCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERSGcorrection and switching mode power supp

 0.41. Size:160K  aosemi
aot16n50.pdf

16N50
16N50

AOT16N50/AOTF16N50500V, 16A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT16N50 & AOTF16N50 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 16Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 0.42. Size:160K  aosemi
aotf16n50.pdf

16N50
16N50

AOT16N50/AOTF16N50500V, 16A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT16N50 & AOTF16N50 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 16Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 0.43. Size:151K  ape
ap16n50p.pdf

16N50
16N50

AP16N50P-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16AG RoHS Compliant & Halogen-FreeSDescriptionAP16N50 series are from Advanced Power innovated

 0.44. Size:58K  ape
ap16n50i-hf.pdf

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16N50

AP16N50I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized

 0.45. Size:59K  ape
ap16n50w-hf.pdf

16N50
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AP16N50W-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized

 0.46. Size:59K  ape
ap16n50p-hf.pdf

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AP16N50P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized

 0.47. Size:171K  ape
ap16n50i.pdf

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AP16N50I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID3 16AG RoHS Compliant & Halogen-FreeSDescriptionAP16N50 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

 0.48. Size:58K  ape
ap16n50w.pdf

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AP16N50WRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.4 Fast Switching Characteristic ID 16AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design, lowon-resistance a

 0.49. Size:1026K  magnachip
mdf16n50gth mdp16n50gth.pdf

16N50
16N50

MDP16N50G / MDF16N50G N-Channel MOSFET 500V, 16.0 A, 0.35 General Description Features VDS = 500V These N-channel MOSFET are produced using advanced VDS = 550V @ Tjmax MagnaChips MOSFET Technology, which provides low on-ID = 16A @VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.35 @VGS = 10V quality. These devices are suitable d

 0.50. Size:813K  magnachip
mdq16n50gth mdq16n50gtp.pdf

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MDQ16N50G N-Channel MOSFET 500V, 16.5A, 0.35 General Description Features V = 500V DSThese N-channel MOSFET are produced using advanced I = 16.5A @V = 10V D GSMagnaChips MOSFET Technology, which provides low on- R 0.35 @V = 10V DS(ON) GSstate resistance, high switching performance and excellent quality. Applications These devices are suitab

 0.51. Size:871K  bruckewell
msw16n50.pdf

16N50
16N50

MSW16N50 500V N-Channel MOSFET Description TO-247 This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics

 0.52. Size:426K  bruckewell
msf16n50.pdf

16N50
16N50

MSF16N50 500V N-Channel MOSFET Description The MSF16N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features RDS(on) (Typical 0.33)@VGS=10V Gate

 0.53. Size:908K  jiaensemi
jfpc16n50c jffm16n50c.pdf

16N50
16N50

JFPC16N50C JFFM16N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 16A, 500V, RDS(on)typ. = 0.33@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

 0.54. Size:1321K  maple semi
slp16n50c slf16n50c.pdf

16N50
16N50

SLP16N50C / SLF16N50C500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 16A, 500V, RDS(on)typ. = 305m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 52nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching

 0.55. Size:938K  maple semi
slp16n50s slf16n50s.pdf

16N50
16N50

SLP16N50S / SLF16N50S500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 16A, 500V, RDS(on) = 280m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 31nC)This advanced technology has been especially tailored - Low Crss ( typical 6.8pF)to minimize on-state resistance, provide superior switching - High rug

 0.56. Size:916K  truesemi
tsf16n50mr.pdf

16N50
16N50

TSF16N50MR500V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 16.0A,500V,Max.RDS(on)=0.4 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 32nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withs

 0.57. Size:2457K  cn hmsemi
hm16n50 hm16n50f.pdf

16N50
16N50

HM16N50 / HM16N50F500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 16A, 500V, RDS(on)typ. = 305m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 52nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingp

 0.58. Size:248K  inchange semiconductor
spp16n50c3.pdf

16N50
16N50

isc N-Channel MOSFET Transistor SPP16N50C3ISPP16N50C3FEATURESStatic drain-source on-resistance:RDS(on) 280mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONNew revolutionary high voltage technologyUltra low effective capacitanceABSOLUTE MAXIMUM

 0.59. Size:288K  inchange semiconductor
mdp16n50gth.pdf

16N50
16N50

isc N-Channel MOSFET Transistor MDP16N50GTHFEATURESDrain Current : I = 16A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.35(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 0.60. Size:328K  inchange semiconductor
mdq16n50gtp.pdf

16N50
16N50

isc N-Channel MOSFET Transistor MDQ16N50GTPFEATURESDrain Current : I = 16.5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.35(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

 0.61. Size:244K  inchange semiconductor
spw16n50c3.pdf

16N50
16N50

isc N-Channel MOSFET Transistor SPW16N50C3ISPW16N50C3FEATURESStatic drain-source on-resistance:RDS(on)280mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved TransconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 50

 0.62. Size:261K  inchange semiconductor
aot16n50.pdf

16N50
16N50

isc N-Channel MOSFET Transistor AOT16N50FEATURESDrain Current I = 16A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.37(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 0.63. Size:226K  inchange semiconductor
aotf16n50.pdf

16N50
16N50

isc N-Channel Mosfet Transistor AOTF16N50FEATURESDrain Current I = 16A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSLow ON Resistance R = 0.37(Max)DS(on)Low leakage currentFast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for high efficiency switch mode power supply.ABSOLUTE

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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