1N50 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 1N50
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 1.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 30 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.6 Ohm
Encapsulados: TO-220
Búsqueda de reemplazo de 1N50 MOSFET
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1N50 datasheet
1n50.pdf
UNISONIC TECHNOLOGIES CO., LTD 1N50 Power MOSFET Preliminary 1.3 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N50 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe 1 TO-220 and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand
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mtp1n50e.pdf
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nvert CST1N50DLU, CST1N50DLD, CST1N50DLF Suzhou Convert Semiconductor Co ., Ltd. 500V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CST1N50DLU T
hm1n50mr.pdf
Silicon N-Channel Power MOSFET HM1N50MR General Description VDSS 500 V HM1N50MR, the silicon N-channel Enhanced ID 1.0 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching cir
irfp31n50l.pdf
iscN-Channel MOSFET Transistor IRFP31N50L FEATURES Low drain-source on-resistance RDS(ON) =0.18 (MAX) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
irfs11n50a.pdf
iscN-Channel MOSFET Transistor IRFS11N50A FEATURES Low drain-source on-resistance RDS(ON) =0.52 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
spp21n50c3.pdf
isc N-Channel MOSFET Transistor SPP21N50C3 ISPP21N50C3 FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION New revolutionary high voltage technology Ultra low effective capacitance ABSOLUTE MAXIMUM
spw21n50c3.pdf
isc N-Channel MOSFET Transistor SPW21N50C3 ISPW21N50C3 FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved Transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 50
Otros transistores... 24N50 , 26N50 , UF830 , UF830Z , UF840 , UK3568 , UF450 , UF460 , IRF9540N , 1N50Z , 2N50 , 3N50 , 3N50Z , 4N50 , 5N50 , 5N50K , 6N50 .
History: AOU1N60 | AP9970GW | IXFT50N85XHV
History: AOU1N60 | AP9970GW | IXFT50N85XHV
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