1N50 Datasheet. Specs and Replacement
Type Designator: 1N50 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.6 Ohm
Package: TO-220
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1N50 substitution
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1N50 datasheet
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TMP11N50SG/TMPF11N50SG VDSS = 550 V @Tjmax Features ID = 10A Low gate charge RDS(ON) = 0.7 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D G S Device Package Marking Remark TMP11N50SG / TMPF11N50SG TO-220 / TO-220F TMP11N50SG / TMPF11N50SG Halogen Fre... See More ⇒
tmp11n50 tmpf11n50.pdf
TMP11N50/TMPF11N50 TMP11N50G/TMPF11N50G VDSS = 550 V @Tjmax Features ID = 11A Low gate charge RDS(ON) = 0.67 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D G S Device Package Marking Remark TMP11N50 / TMPF11N50 TO-220 / TO-220F TMP11N50 / TMPF11N50 ... See More ⇒
cs1n50a1.pdf
Silicon N-Channel Power MOSFET R CS1N50 A1 General Description VDSS 500 V CS1N50 A1, the silicon N-channel Enhanced ID 1.0 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒
cst1n50dlu cst1n50dld cst1n50dlf.pdf
nvert CST1N50DLU, CST1N50DLD, CST1N50DLF Suzhou Convert Semiconductor Co ., Ltd. 500V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CST1N50DLU T... See More ⇒
hm1n50mr.pdf
Silicon N-Channel Power MOSFET HM1N50MR General Description VDSS 500 V HM1N50MR, the silicon N-channel Enhanced ID 1.0 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching cir... See More ⇒
irfp31n50l.pdf
iscN-Channel MOSFET Transistor IRFP31N50L FEATURES Low drain-source on-resistance RDS(ON) =0.18 (MAX) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒
irfs11n50a.pdf
iscN-Channel MOSFET Transistor IRFS11N50A FEATURES Low drain-source on-resistance RDS(ON) =0.52 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒
spp21n50c3.pdf
isc N-Channel MOSFET Transistor SPP21N50C3 ISPP21N50C3 FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION New revolutionary high voltage technology Ultra low effective capacitance ABSOLUTE MAXIMUM ... See More ⇒
spw21n50c3.pdf
isc N-Channel MOSFET Transistor SPW21N50C3 ISPW21N50C3 FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved Transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 50... See More ⇒
Detailed specifications: 24N50, 26N50, UF830, UF830Z, UF840, UK3568, UF450, UF460, IRF1010E, 1N50Z, 2N50, 3N50, 3N50Z, 4N50, 5N50, 5N50K, 6N50
Keywords - 1N50 MOSFET specs
1N50 cross reference
1N50 equivalent finder
1N50 pdf lookup
1N50 substitution
1N50 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
MOSFET Parameters. How They Affect Each Other
History: 15N06 | 2KJ7107DFN
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