1N50 MOSFET. Datasheet pdf. Equivalent

Type Designator: 1N50

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 1.3 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 13 nS

Drain-Source Capacitance (Cd): 30 pF

Maximum Drain-Source On-State Resistance (Rds): 4.6 Ohm

Package: TO-220

1N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

1N50 Datasheet (PDF)

1.1. tmp11n50 tmpf11n50.pdf Size:353K _update

TMP11N50/TMPF11N50 TMP11N50G/TMPF11N50G VDSS = 550 V @Tjmax Features ID = 11A  Low gate charge RDS(ON) = 0.67 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery D G S Device Package Marking Remark TMP11N50 / TMPF11N50 TO-220 / TO-220F TMP11N50 / TMPF11N50

1.2. tmp11n50sg tmpf11n50sg.pdf Size:340K _update

TMP11N50SG/TMPF11N50SG VDSS = 550 V @Tjmax Features ID = 10A  Low gate charge RDS(ON) = 0.7 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery D G S Device Package Marking Remark TMP11N50SG / TMPF11N50SG TO-220 / TO-220F TMP11N50SG / TMPF11N50SG Halogen Fre

1.3. irfy11n50cma.pdf Size:104K _update

PD - 94167A HEXFET® POWER MOSFET IRFY11N50CMA THRU-HOLE (TO-257AA) 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFY11N50CMA 500V 0.56Ω 10A Fifth Generation HEXFET® power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Feature

1.4. stf11n50m2.pdf Size:986K _update

STD11N50M2, STF11N50M2 N-channel 500 V, 0.45 Ω typ,8 A, MDmesh II Plus™ low Qg Power MOSFETs in DPAK and TO-220FP packages Datasheet - preliminary data Features Order codes VDS @ TJmax RDS(on) max ID STD11N50M2 550 V 0.53 Ω 8 A STF11N50M2 TAB • Extremely low gate charge 3 1 • Lower RDS(on) x area vs previous generation 3 DPAK 2 • Low gate input resistance 1 •

1.5. irfs11n50apbf.pdf Size:341K _upd

IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ()VGS = 10 V 0.52 • Low Gate Charge Qg results in Simple Drive Qg (Max.) (nC) 52 Requirement Qgs (nC) 13 • Improved Gate, Avalanche and Dynamic dV/dt Qgd (nC) 18 Ruggedness • Fully Characterized Capacitance and Avalanc

1.6. std11n50m2 stf11n50m2.pdf Size:986K _upd

1.7. irfsl11n50apbf.pdf Size:307K _upd

IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 • Repetitive Avalanche Rated RDS(on) ()VGS = 10 V 0.55 • Fast Switching Qg (Max.) (nC) 51 • Ease of Paralleling Qgs (nC) 12 • Simple Drive Requirements Qgd (nC) 23 • Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION D I2PAK

1.8. sihfsl11n50a.pdf Size:307K _upd-mosfet

1.9. msu11n50q.pdf Size:398K _upd-mosfet

500V/11A POWER MOSFET (N-Channel) MSU11N50Q 500V/11A Power MOSFET (N-Channel) General Description  MSU11N50Q is a N-Channel enhancement mode power MOSFET with advanced technology. It is designed to have Better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high TO-262 energy pulse in the avalanche and commu

1.10. irfb11n50apbf.pdf Size:163K _upd-mosfet

IRFB11N50A, SiHFB11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (Ω)VGS = 10 V 0.52 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 52 COMPLIANT Ruggedness Qgs (nC) 13 • Fully Characterized Capacitance and Qgd (nC) 18 Avalanche Voltage and current Confi

1.11. fmr21n50es.pdf Size:491K _upd-mosfet

FMR21N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3PF Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2±0.5V)

1.12. irfp31n50l irfp31n50lpbf.pdf Size:192K _upd-mosfet

IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Super Fast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) ()VGS = 10 V 0.15 RoHS* • Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 210 COMPLIANT Requirements Qgs (nC) 58 • Enhanced dV/dt Capabilities Offer Improved Ruggedness

1.13. fmv21n50es.pdf Size:486K _upd-mosfet

FMV21N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F (SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2

1.14. sihfs11n50a.pdf Size:341K _upd-mosfet

1.15. fmh21n50es.pdf Size:494K _upd-mosfet

FMH21N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P (Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2±0.5

1.16. sihfp31n50l.pdf Size:192K _upd-mosfet

1.17. tsm1n50ct.pdf Size:118K _update_mosfet

1.18. smos21n50 smos26n50.pdf Size:135K _update_mosfet

SMOS21N50, SMOS26N50 Power MOSFETs Dimensions TO-247AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 S (TAB) E 4.32 5.49 0.170 0.216 D G F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 G=Gate, D=Drain, K 10.8 11.0 0.426 0.433 S=Source,TAB=Drain

1.19. wvm21n50.pdf Size:23K _update_mosfet

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM21N50(IRF460) Power MOSFET(N-channel) Transistor Features: 1. It’s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power s

1.20. cs1n50a1.pdf Size:545K _update_mosfet

Silicon N-Channel Power MOSFET R ○ CS1N50 A1 General Description： VDSS 500 V CS1N50 A1, the silicon N-channel Enhanced ID 1.0 A PD (TC=25℃) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

1.21. mtp1n50e.pdf Size:112K _update-mosfet

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1N50E/D Designer's Data Sheet MTP1N50E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 1.0 AMPERES scheme to provide enhanced voltage–blocking capability without 500 VOLTS degra

1.22. mtp1n50.pdf Size:25K _update-mosfet

PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: MTP1N50 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain – Source Voltage VDSS 500 Vdc Drain – Gate Voltage VDGR 500 Vdc Drain Current – Continuous ID 1.

1.23. mtp1n50e.pdf Size:142K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1N50E/D Designer's? Data Sheet MTP1N50E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor N�Channel Enhancement�Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 1.0 AMPERES scheme to provide enhanced voltage�blocking capability without 500 VOLTS degrading performa

1.24. mtd1n50erev1.pdf Size:267K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD1N50E/D Designer's? Data Sheet MTD1N50E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET N�Channel Enhancement�Mode Silicon Gate 1.0 AMPERE 500 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 5.0 OHM scheme to provide enhanced voltage�blocki

1.25. mtp1n50erev1x.pdf Size:159K _motorola

1.26. mtd1n50e.pdf Size:230K _motorola

1.27. phx1n50e 1.pdf Size:24K _philips2

Philips Semiconductors Objective Specification PowerMOS transistor PHX1N50E Isolated version fo PHP1N50E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a full pack, plastic envelope featuring high VDS Drain-source voltage 500 V avalanche energy capability, stable ID Drain current (DC) 1.4 A blocking voltage

1.28. phb11n50e phw11n50e 1.pdf Size:102K _philips2

Philips Semiconductors Product specification PowerMOS transistors PHB11N50E, PHW11N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d � Repetitive Avalanche Rated � Fast switching VDSS = 500 V � Stable off-state characteristics � High thermal cycling performance ID = 10.9 A g � Low thermal resistance RDS(ON) ? 0.55 ? s GENERAL DESCRIPTION N-channel, enhancement mode

1.29. php11n50e phb11n50e phw11n50e.pdf Size:35K _philips2

Philips Semiconductors Preliminary specification PowerMOS transistors PHP11N50E, PHB11N50E, PHW11N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 500 V • Stable off-state characteristics • High thermal cycling performance ID = 10.4 A g • Low thermal resistance RDS(ON) ≤ 0.6 Ω s GENERAL DESCRIPTI

1.30. php1n50e 1.pdf Size:20K _philips2

Philips Semiconductors Objective Specification PowerMOS transistor PHP1N50E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 500 V avalanche energy capability, stable ID Drain current (DC) 2 A blocking voltage, fast switching and Ptot Total power dissip

1.31. fqp11n50cf.pdf Size:1291K _fairchild_semi

July 2005 TM FRFET FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features Description • 11A, 500V, RDS(on) = 0.55Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low Gate Charge (typical 43 nC) DMOS technology. • Low Crss (typical 20pF) This advanced technology has been especially tai

1.32. fqnl1n50bbu fqnl1n50bta.pdf Size:618K _fairchild_semi

March 2001 TM QFET FQNL1N50B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 0.27A, 500V, RDS(on) = 9.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 3.0 pF) This advanced technology has been especially tailo

1.33. fqpf1n50.pdf Size:722K _fairchild_semi

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 0.9A, 500V, RDS(on) = 9.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 3.0 pF) This advanced technology has bee

1.34. fqnl1n50b.pdf Size:620K _fairchild_semi

March 2001 TM QFET FQNL1N50B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect � 0.27A, 500V, RDS(on) = 9.0? @VGS = 10 V transistors are produced using Fairchild�s proprietary, � Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. � Low Crss ( typical 3.0 pF) This advanced technology has been especially tailored to � Fas

1.35. fqu1n50tu.pdf Size:827K _fairchild_semi

January 2009 QFET® FQD1N50 / FQU1N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 1.1A, 500V, RDS(on) = 9.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 3.0 pF) This advanced technology has been especia

1.36. fqp11n50cf fqpf11n50cf.pdf Size:1291K _fairchild_semi

July 2005 TM FRFET FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features Description � 11A, 500V, RDS(on) = 0.55? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild�s proprietary, planar stripe, � Low Gate Charge (typical 43 nC) DMOS technology. � Low Crss (typical 20pF) This advanced technology has been especially tailored to mini

1.37. fqp1n50.pdf Size:725K _fairchild_semi

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 1.4A, 500V, RDS(on) = 9.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 3.0 pF) This advanced technology has been

1.38. fqn1n50cbu fqn1n50cta.pdf Size:1065K _fairchild_semi

January 2006 ® QFET FQN1N50C 500V N-Channel MOSFET Features Description • 0.38 A, 500 V, RDS(on) = 6.0 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 4.9 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to • Low Crss ( typica

1.39. fqd1n50tf fqd1n50tm.pdf Size:827K _fairchild_semi

1.40. fqn1n50c.pdf Size:1068K _fairchild_semi

January 2006 � QFET FQN1N50C 500V N-Channel MOSFET Features Description � 0.38 A, 500 V, RDS(on) = 6.0 ? @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild�s proprietary, planar � Low gate charge ( typical 4.9 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to � Low Crss ( typical 4.1 pF) min

1.41. ssu1n50b.pdf Size:688K _fairchild_semi

April 2014 SSU1N50B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.3A, 520V, RDS(on) = 5.3Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low Gate Charge (Typ. 8.3 nC) planar, DMOS technology. • Low Crss (Typ. 5.5 pF) This advanced technology has been especially tailored to • Fast Switching

1.42. irfs11n50apbf.pdf Size:855K _international_rectifier

PD- 95232 IRFS11N50APbF � Lead-Free 04/29/04 Document Number: 91286 www.vishay.com 1 IRFS11N50APbF Document Number: 91286 www.vishay.com 2 IRFS11N50APbF Document Number: 91286 www.vishay.com 3 IRFS11N50APbF Document Number: 91286 www.vishay.com 4 IRFS11N50APbF Document Number: 91286 www.vishay.com 5 IRFS11N50APbF Document Number: 91286 www.vishay.com 6 IRFS11N50APbF Do

1.43. irfy11n50cma.pdf Size:105K _international_rectifier

PD - 94167A HEXFET� POWER MOSFET IRFY11N50CMA THRU-HOLE (TO-257AA) 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFY11N50CMA 500V 0.56? 10A Fifth Generation HEXFET� power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fas

1.44. irfp31n50l.pdf Size:95K _international_rectifier

PD - 94081 SMPS MOSFET IRFP31N50L Applications HEXFET� Power MOSFET Switch Mode Power Supply (SMPS) UninterruptIble Power Supply VDSS RDS(on) typ. ID High Speed Power Switching 500V 0.15? 31A ZVS and High Frequency Circuit PWM Inverters Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capa

1.45. irfsl11n50.pdf Size:111K _international_rectifier

PD- 91847B IRFSL11N50A HEXFET� Power MOSFET Dynamic dv/dt Rating D Repetitive Avalanche Rated VDSS = 500V Fast Switching Ease of Paraleling RDS(on) = 0.55? Simple Drive Requirements G ID = 11A S Description Third Generation HEXFET� Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resi

1.46. irfs11n50a.pdf Size:118K _international_rectifier

PD- 93797 SMPS MOSFET IRFS11N50A HEXFET� Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.52? 11A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D 2 Pak Avalanche Voltage and Cu

1.47. irfsl11n50a.pdf Size:107K _international_rectifier

PD- 91847A IRFSL11N50A HEXFET� Power MOSFET Dynamic dv/dt Rating D Repetitive Avalanche Rated VDSS = 500V Fast Switching Ease of Paraleling RDS(on) = 0.55? Simple Drive Requirements G ID = 11A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and co

1.48. irfb11n50a.pdf Size:202K _international_rectifier

PD- 94832 SMPS MOSFET IRFB11N50APbF HEXFET� Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.52? 11A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche V

1.49. irfba31n50l.pdf Size:41K _international_rectifier

PD- 93925 PROVISIONAL IRFBA31N50L SMPS MOSFET HEXFET� Power MOSFET Applications VDSS RDS(on) ID Telecom and Data-Com off-Line SMPS Motor Control 500V 0.152? 31A UninterruptIble Power Supply Benefits Low On-Resistance High Speed Switching Low Gate Drive Current Due to Improved Gate Charge Characteristics Built in Fast Recovery Diode Improved Avalanche Ruggedness and Super-

1.50. irfsl11n50apbf.pdf Size:827K _international_rectifier

PD- 95231 IRFSL11N50APbF � Lead-Free 04/29/04 Document Number: 91288 www.vishay.com 1 IRFSL11N50APbF Document Number: 91288 www.vishay.com 2 IRFSL11N50APbF Document Number: 91288 www.vishay.com 3 IRFSL11N50APbF Document Number: 91288 www.vishay.com 4 IRFSL11N50APbF Document Number: 91288 www.vishay.com 5 IRFSL11N50APbF Document Number: 91288 www.vishay.com 6 IRFSL11N50AP

1.51. irfp31n50lpbf.pdf Size:208K _international_rectifier

PD - 95051 SMPS MOSFET IRFP31N50LPbF AppIications HEXFET� Power MOSFET � Trr typ. VDSS RDS(on) typ. ID � � 500V 0.15? 170ns 31A � � Features and Benefits � �

1.52. ssw1n50a.pdf Size:503K _samsung

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology ? RDS(on) = 5.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 �A (Max.) @ VDS = 500V 2 Lower RDS(ON) : 4.046 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteri

1.53. ssr1n50a.pdf Size:504K _samsung

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 5.5? Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.3 A Improved Gate Charge Extended Safe Operating Area � Lower Leakage Current : 10 A (Max.) @ VDS = 500V ? Lower RDS(ON) : 4.046 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characterist

1.54. ssp1n50a.pdf Size:942K _samsung

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 5.5? Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 �A (Max.) @ VDS = 500V Lower RDS(ON) : 4.046 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

1.55. irfp31n50l sihfp31n50l.pdf Size:188K _vishay

IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Super Fast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) (?)VGS = 10 V 0.15 RoHS* � Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 210 COMPLIANT Requirements Qgs (nC) 58 � Enhanced dV/dt Capabilities Offer Improved Ruggedness Qgd (nC) 10

1.56. irfb11n50a sihfb11n50a.pdf Size:137K _vishay

IRFB11N50A, SiHFB11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (?)VGS = 10 V 0.52 � Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 52 COMPLIANT Ruggedness Qgs (nC) 13 � Fully Characterized Capacitance and Qgd (nC) 18 Avalanche Voltage and current Configuration S

1.57. irfsl11n50a sihfsl11n50a.pdf Size:305K _vishay

IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Dynamic dV/dt Rating VDS (V) 500 � Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.55 � Fast Switching Qg (Max.) (nC) 51 � Ease of Paralleling Qgs (nC) 12 � Simple Drive Requirements Qgd (nC) 23 � Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION D I2PAK (TO-262) Third

1.58. spb21n50c3 rev.2.3.pdf Size:1286K _infineon

SPB21N50C3 Cool MOS� Power Transistor VDS @ Tjmax 560 V RDS(on) 0.19 ? Feature ID 21 A � New revolutionary high voltage technology PG-TO263 � Ultra low gate charge � Periodic avalanche rated � Extreme dv/dt rated � Ultra low effective capacitances � Improved transconductance Type Package Ordering Code Marking SPB21N50C3 PG-TO263 Q67040-S4566 21N50C3 Maximum Ratings Parameter Symbol

1.59. spp21n50c3 spi21n50c3 spa21n50c3.pdf Size:751K _infineon

SPP21N50C3 SPI21N50C3, SPA21N50C3 Cool MOS� Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.19 ? � New revolutionary high voltage technology ID 21 A � Worldwide best RDS(on) in TO 220 PG-TO220FP P G-TO262 PG-TO220 � Ultra low gate charge � Periodic avalanche rated 3 � Extreme dv/dt rated 2 1 � Ultra low effective capacitances � Improved transconductance Type Package Ordering

1.60. spw21n50c3 rev[1].2.5 pcn.pdf Size:761K _infineon

VDS Tjmax ? � � G � � � � G

1.61. ixth21n50 ixth24n50 ixtm21n50 ixtm24n50.pdf Size:108K _ixys

VDSS ID25 RDS(on) MegaMOSTMFET ? IXTH / IXTM 21N50 500 V 21 A 0.25 ? ? ? ? ? IXTH / IXTM 24N50 500 V 24 A 0.23 ? ? ? ? N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25�C to 150�C 500 V VDGR TJ = 25�C to 150�C; RGS = 1 M? 500 V D (TAB) VGS Continuous �20 V VGSM Transient �30 V ID25 TC = 25�C 21N50 21 A TO-204 AE (IXTM) 24N50 24 A

1.62. ixfh21n50 ixfh24n50 ixfh26n50 ixfm21n50 ixfm24n50 ixfm26n50 ixft24n50 ixft26n50.pdf Size:158K _ixys

VDSS ID25 RDS(on) HiPerFETTM ? IXFH/IXFM21N50 500 V 21 A 0.25 ? ? ? ? Power MOSFETs ? IXFH/IXFM/IXFT24N50 500 V 24 A 0.23 ? ? ? ? ? IXFH/IXFT26N50 500 V 26 A 0.20 ? ? ? ? N-Channel Enhancement Mode ? High dv/dt, Low trr, HDMOSTM Family trr ? ? 250 ns ? ? TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25�C to 150�C 500 V VDGR TJ = 25�C to 150�C; RGS =

1.63. 1n50z.pdf Size:185K _utc

UNISONIC TECHNOLOGIES CO., LTD 1N50Z Preliminary Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N50Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse i

1.64. 11n50.pdf Size:177K _utc

UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET 11A, 500V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 11N50 is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state 1 resistance. It also can withstand high energy pulse in the avalanche TO-220F

1.65. 1n50.pdf Size:164K _utc

UNISONIC TECHNOLOGIES CO., LTD 1N50 Power MOSFET Preliminary 1.3 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe 1 TO-220 and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand

1.66. kf11n50p-f.pdf Size:415K _kec

KF11N50P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF11N50P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ + switching mode power supplies. A

1.67. spp21n50c3.pdf Size:247K _inchange_semiconductor

isc N-Channel MOSFET Transistor SPP21N50C3，ISPP21N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤190mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·New revolutionary high voltage technology ·Ultra low effective capacitance ·ABSOLUTE MAXIMUM

1.68. spw21n50c3.pdf Size:244K _inchange_semiconductor

isc N-Channel MOSFET Transistor SPW21N50C3 ISPW21N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤190mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved Transconductance ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 50

1.69. spi21n50c3.pdf Size:215K _inchange_semiconductor

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPI21N50C3 ·FEATURES ·With TO-262(I2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·Improved transconductance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25�

1.70. ap11n50i.pdf Size:93K _a-power

AP11N50I RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low On-resistance BVDSS 500V Ў Simple Drive Requirement RDS(ON) 0.62? Ў Fast Switching Characteristic ID 11A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low G on-resistance and

1.71. ap11n50i-hf.pdf Size:91K _a-power

AP11N50I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Low On-resistance BVDSS 500V ▼ Simple Drive Requirement RDS(ON) 0.68Ω ▼ Fast Switching Characteristic ID 11A G ▼ RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedize

1.72. cs1n50 a1.pdf Size:545K _crhj

Datasheet: GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

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