12N40 Datasheet. Equivalente

 ..1. Size:162K  utc
 12n40.pdf

UNISONIC TECHNOLOGIES CO., LTD 12N40 Preliminary Power MOSFET 12 A, 400 V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 12N40 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It 1 als

 0.1. Size:45K  1
 hgth12n40c1d hgth12n40e1d hgth12n50c1d hgth12n50e1d.pdf

HGTH12N40C1D, HGTH12N40E1D, S E M I C O N D U C T O R HGTH12N50C1D, HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-218AC 12A, 400V and 500V VCE(ON) 2.5V Max. EMITTER TFALL 1 s, 0.5 s COLLECTOR GATE Low On-State Voltage Fast Switching Speeds COLLECTOR High Input Impedance (FLANG

 0.2. Size:333K  1
 hgth12n40c1 hgth12n40e1 hgth12n50c1 hgth12n50e1 hgtm12n40c1 hgtm12n40e1 hgtm12n50c1 hgtm12n50e1 hgtp10n40c1 hgtp10n40e1 hgtp10n50c1 hgtp10n50e1.pdf

 0.3. Size:49K  1
 hgth12n40c1 hgth12n40e1 hgth12n50c1 hgth12n50e1 hgtp10n40c1 hgtp10n40e1 hgtp10n50c1 hgtp10n50e1.pdf

HGTP10N40C1, 40E1, 50C1, 50E1, S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E1 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC 10A and 12A, 400V and 500V EMITTER VCE(ON) 2.5V Max. COLLECTOR TFI 1 s, 0.5 s GATE COLLECTOR (FLANGE) Low On-State Voltage Fast Switching Speeds High Input Impedance

 0.4. Size:395K  kec
 kmb012n40da.pdf

SEMICONDUCTOR KMB012N40DA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS characteristics. It is mainly suitable for Back-light Inverter and Power L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70 +

 0.5. Size:305K  aosemi
 aot12n40.pdf

AOT12N40 400V,11A N-Channel MOSFET General Description Product Summary VDS 500V@150 The AOT12N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 11A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 0.6. Size:261K  inchange semiconductor
 aot12n40.pdf

isc N-Channel MOSFET Transistor AOT12N40 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.59 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 0.7. Size:2006K  cn apm
 ap12n40f ap12n40p.pdf

AP12N40FIP 400V N-Channel Enhancement Mode MOSFET Description The AP12N40F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.