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12N40 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 12N40

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 192 W

Tensión drenaje-fuente (Vds): 400 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 105 nS

Conductancia de drenaje-sustrato (Cd): 900 pF

Resistencia drenaje-fuente RDS(on): 0.34 Ohm

Empaquetado / Estuche: TO-220, TO-220F1

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12N40 Datasheet (PDF)

1.1. 12n40.pdf Size:162K _utc

12N40
12N40

UNISONIC TECHNOLOGIES CO., LTD 12N40 Preliminary Power MOSFET 12 A, 400 V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 12N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It 1 als

1.2. kmb012n40da.pdf Size:395K _kec

12N40
12N40

SEMICONDUCTOR KMB012N40DA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS characteristics. It is mainly suitable for Back-light Inverter and Power L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70 +

 1.3. aot12n40.pdf Size:305K _aosemi

12N40
12N40

AOT12N40 400V,11A N-Channel MOSFET General Description Product Summary VDS 500V@150℃ The AOT12N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 11A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) <0.59Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche c

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