12N40 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 12N40
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 192 W
Предельно допустимое напряжение сток-исток |Uds|: 400 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 12 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 105 ns
Выходная емкость (Cd): 900 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.34 Ohm
Тип корпуса: TO-220 TO-220F1
12N40 Datasheet (PDF)
12n40.pdf
UNISONIC TECHNOLOGIES CO., LTD 12N40 Preliminary Power MOSFET 12 A, 400 V N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The UTC 12N40 is an N-channel mode power MOSFET usingUTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It1als
hgth12n40c1d hgth12n40e1d hgth12n50c1d hgth12n50e1d.pdf
HGTH12N40C1D, HGTH12N40E1D,S E M I C O N D U C T O RHGTH12N50C1D, HGTH12N50E1D12A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-218AC 12A, 400V and 500V VCE(ON): 2.5V Max.EMITTER TFALL: 1s, 0.5s COLLECTORGATE Low On-State Voltage Fast Switching SpeedsCOLLECTOR High Input Impedance(FLANG
hgth12n40c1 hgth12n40e1 hgth12n50c1 hgth12n50e1 hgtm12n40c1 hgtm12n40e1 hgtm12n50c1 hgtm12n50e1 hgtp10n40c1 hgtp10n40e1 hgtp10n50c1 hgtp10n50e1.pdf
hgth12n40c1 hgth12n40e1 hgth12n50c1 hgth12n50e1 hgtp10n40c1 hgtp10n40e1 hgtp10n50c1 hgtp10n50e1.pdf
HGTP10N40C1, 40E1, 50C1, 50E1,S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E110A, 12A,400V and 500V N-Channel IGBTsApril 1995Features PackagesHGTH-TYPES JEDEC TO-218AC 10A and 12A, 400V and 500VEMITTER VCE(ON): 2.5V Max.COLLECTOR TFI: 1s, 0.5sGATECOLLECTOR(FLANGE) Low On-State Voltage Fast Switching Speeds High Input Impedance
kmb012n40da.pdf
SEMICONDUCTOR KMB012N40DATECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheA KDIM MILLIMETERScharacteristics. It is mainly suitable for Back-light Inverter and Power LC D_A 6.60 + 0.20_B 6.10 + 0.20Supply._C 5.34 + 0.30_D 0.70 +
aot12n40.pdf
AOT12N40400V,11A N-Channel MOSFETGeneral Description Product Summary VDS500V@150The AOT12N40 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 11Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
aot12n40.pdf
isc N-Channel MOSFET Transistor AOT12N40FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.59(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
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