12N40 Datasheet and Replacement
Type Designator: 12N40
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 105 nS
Cossⓘ - Output Capacitance: 900 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
Package: TO-220 TO-220F1
12N40 substitution
12N40 Datasheet (PDF)
12n40.pdf

UNISONIC TECHNOLOGIES CO., LTD 12N40 Preliminary Power MOSFET 12 A, 400 V N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The UTC 12N40 is an N-channel mode power MOSFET usingUTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It1als
hgth12n40c1d hgth12n40e1d hgth12n50c1d hgth12n50e1d.pdf

HGTH12N40C1D, HGTH12N40E1D,S E M I C O N D U C T O RHGTH12N50C1D, HGTH12N50E1D12A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-218AC 12A, 400V and 500V VCE(ON): 2.5V Max.EMITTER TFALL: 1s, 0.5s COLLECTORGATE Low On-State Voltage Fast Switching SpeedsCOLLECTOR High Input Impedance(FLANG
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hgth12n40c1 hgth12n40e1 hgth12n50c1 hgth12n50e1 hgtp10n40c1 hgtp10n40e1 hgtp10n50c1 hgtp10n50e1.pdf

HGTP10N40C1, 40E1, 50C1, 50E1,S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E110A, 12A,400V and 500V N-Channel IGBTsApril 1995Features PackagesHGTH-TYPES JEDEC TO-218AC 10A and 12A, 400V and 500VEMITTER VCE(ON): 2.5V Max.COLLECTOR TFI: 1s, 0.5sGATECOLLECTOR(FLANGE) Low On-State Voltage Fast Switching Speeds High Input Impedance
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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