12N40
MOSFET. Datasheet pdf. Equivalent
Type Designator: 12N40
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 192
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 105
nS
Cossⓘ -
Output Capacitance: 900
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.34
Ohm
Package:
TO-220
TO-220F1
12N40
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
12N40
Datasheet (PDF)
..1. Size:162K utc
12n40.pdf 
UNISONIC TECHNOLOGIES CO., LTD 12N40 Preliminary Power MOSFET 12 A, 400 V N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The UTC 12N40 is an N-channel mode power MOSFET usingUTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It1als
0.1. Size:45K 1
hgth12n40c1d hgth12n40e1d hgth12n50c1d hgth12n50e1d.pdf
HGTH12N40C1D, HGTH12N40E1D,S E M I C O N D U C T O RHGTH12N50C1D, HGTH12N50E1D12A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-218AC 12A, 400V and 500V VCE(ON): 2.5V Max.EMITTER TFALL: 1s, 0.5s COLLECTORGATE Low On-State Voltage Fast Switching SpeedsCOLLECTOR High Input Impedance(FLANG
0.3. Size:49K 1
hgth12n40c1 hgth12n40e1 hgth12n50c1 hgth12n50e1 hgtp10n40c1 hgtp10n40e1 hgtp10n50c1 hgtp10n50e1.pdf
HGTP10N40C1, 40E1, 50C1, 50E1,S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E110A, 12A,400V and 500V N-Channel IGBTsApril 1995Features PackagesHGTH-TYPES JEDEC TO-218AC 10A and 12A, 400V and 500VEMITTER VCE(ON): 2.5V Max.COLLECTOR TFI: 1s, 0.5sGATECOLLECTOR(FLANGE) Low On-State Voltage Fast Switching Speeds High Input Impedance
0.4. Size:395K kec
kmb012n40da.pdf
SEMICONDUCTOR KMB012N40DATECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheA KDIM MILLIMETERScharacteristics. It is mainly suitable for Back-light Inverter and Power LC D_A 6.60 + 0.20_B 6.10 + 0.20Supply._C 5.34 + 0.30_D 0.70 +
0.5. Size:305K aosemi
aot12n40.pdf
AOT12N40400V,11A N-Channel MOSFETGeneral Description Product Summary VDS500V@150The AOT12N40 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 11Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
0.6. Size:261K inchange semiconductor
aot12n40.pdf
isc N-Channel MOSFET Transistor AOT12N40FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.59(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
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