25N40 Datasheet. Equivalente

 ..1. Size:177K  utc
 25n40.pdf

UNISONIC TECHNOLOGIES CO., LTD 25N40 Preliminary Power MOSFET 400V, 26A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 25N40 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse

 0.1. Size:213K  1
 ssf25n40a.pdf

 0.2. Size:214K  samsung
 ssh25n40a.pdf

SSH25N40A Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 25 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 10 A (Max.) @ VDS = 400V Low RDS(ON) 0.162 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol C

 0.3. Size:105K  samsung
 sgi25n40.pdf

N-CHANNEL IGBT SGI25N40 FEATURES I2 - PAK * High Input Impedance * High Peak Current Capability(170A) * Easy Drive by Gate Voltage C APPLICATIONS * STROBE FLASH G E ABSOLUTE MAXIMUM RATINGS Symbol Characteristics Unit Rating VCES Collector-Emitter Voltage V 400 VGE Gate - Emitter Voltage V 25 IC Continuous Collector Current Tc = 25 25 A ICM Pulsed Collector Curren

 0.4. Size:275K  samsung
 ssh25n35 ssh25n40.pdf

 0.5. Size:208K  vishay
 sihp25n40d.pdf

 0.6. Size:179K  vishay
 sihg25n40d.pdf

SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) at TJ max. 450 Definition RDS(on) max. at 25 C ( ) VGS = 10 V 0.17 Optimal Design Qg max. (nC) 88 - Low Area Specific On-Resistance Qgs (nC) 12 - Low Input Capacitance (Ciss) Qgd (nC) 23 - Reduced Capacitive Switching Losses Conf

 0.7. Size:1108K  belling
 bl25n40-p bl25n40-a bl25n40-w bl25n40-f.pdf

BL25N40 Power MOSFET 1 Description Step-Down Converter BL25N40, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

 0.8. Size:23K  shaanxi
 wvm25n40.pdf

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM25N(IRF360) Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of power sou

 0.9. Size:222K  inchange semiconductor
 25n40a.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 25N40A FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.2 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Switch mode power suppl