25N40 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 25N40

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 297 W

Tensión drenaje-fuente (Vds): 400 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 25 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 100 nS

Conductancia de drenaje-sustrato (Cd): 390 pF

Resistencia drenaje-fuente RDS(on): 0.11 Ohm

Empaquetado / Estuche: TO-247

Búsqueda de reemplazo de MOSFET 25N40

25N40 Datasheet (PDF)

1.1. ssh25n35 ssh25n40.pdf Size:275K _samsung

1.2. ssh25n40a.pdf Size:214K _samsung

SSH25N40A Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology Ω RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 25 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 10 A (Max.) @ VDS = 400V µ Low RDS(ON) : 0.162 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol C

1.3. sgi25n40.pdf Size:105K _samsung

N-CHANNEL IGBT SGI25N40 FEATURES I2 - PAK * High Input Impedance * High Peak Current Capability(170A) * Easy Drive by Gate Voltage C APPLICATIONS * STROBE FLASH G E ABSOLUTE MAXIMUM RATINGS Symbol Characteristics Unit Rating VCES Collector-Emitter Voltage V 400 VGE Gate - Emitter Voltage V 25 IC Continuous Collector Current Tc = 25 25 A ICM Pulsed Collector Curren

1.4. sihg25n40d.pdf Size:179K _vishay

SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) at TJ max. 450 Definition RDS(on) max. at 25 °C () VGS = 10 V 0.17 • Optimal Design Qg max. (nC) 88 - Low Area Specific On-Resistance Qgs (nC) 12 - Low Input Capacitance (Ciss) Qgd (nC) 23 - Reduced Capacitive Switching Losses Conf

1.5. sihp25n40d.pdf Size:208K _vishay

SiHP25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS (V) at TJ max. 450 - Low Area Specific On-Resistance RDS(on) max. at 25 °C () VGS = 10 V 0.17 - Low Input Capacitance (Ciss) Qg max. (nC) 88 - Reduced Capacitive Switching Losses Qgs (nC) 12 - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) Qgd (nC) 23 �

1.6. 25n40.pdf Size:177K _utc

UNISONIC TECHNOLOGIES CO., LTD 25N40 Preliminary Power MOSFET 400V, 26A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 25N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse

1.7. 25n40a.pdf Size:222K _inchange_semiconductor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 25N40A ·FEATURES ·Drain Current I = 25A@ T =25℃ D C ·Drain Source Voltage : V = 400V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.2Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. ·APPLICATIONS ·Switch mode power suppl

1.8. wvm25n40.pdf Size:23K _shaanxi

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM25N(IRF360) Power MOSFET(N-channel) Transistor Features: 1. It’s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power sou

Otros transistores... 9N40 , 10N40 , 11N40 , 12N40 , 13N40 , 15N40 , 18N40 , 20N40 , BF245C , UF730 , UF740 , UF3N25 , UF634 , 12N25 , 15N25 , 18N25 , UF2N30 .

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