All MOSFET. 25N40 Datasheet

 

25N40 MOSFET. Datasheet pdf. Equivalent

Type Designator: 25N40

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 297 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 25 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 100 nS

Drain-Source Capacitance (Cd): 390 pF

Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm

Package: TO-247

25N40 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

25N40 Datasheet (PDF)

1.1. sihg25n40d.pdf Size:179K _upd-mosfet

25N40
25N40

SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) at TJ max. 450 Definition RDS(on) max. at 25 °C () VGS = 10 V 0.17 • Optimal Design Qg max. (nC) 88 - Low Area Specific On-Resistance Qgs (nC) 12 - Low Input Capacitance (Ciss) Qgd (nC) 23 - Reduced Capacitive Switching Losses Conf

1.2. sihp25n40d.pdf Size:208K _upd-mosfet

25N40
25N40

SiHP25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS (V) at TJ max. 450 - Low Area Specific On-Resistance RDS(on) max. at 25 °C () VGS = 10 V 0.17 - Low Input Capacitance (Ciss) Qg max. (nC) 88 - Reduced Capacitive Switching Losses Qgs (nC) 12 - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) Qgd (nC) 23

 1.3. wvm25n40.pdf Size:23K _update_mosfet

25N40

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM25N(IRF360) Power MOSFET(N-channel) Transistor Features: 1. It’s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power sou

1.4. ssh25n35 ssh25n40.pdf Size:275K _samsung

25N40
25N40



 1.5. ssh25n40a.pdf Size:214K _samsung

25N40
25N40

SSH25N40A Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology ? RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 25 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 0.162 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Character

1.6. sgi25n40.pdf Size:105K _samsung

25N40
25N40

N-CHANNEL IGBT SGI25N40 FEATURES I2 - PAK * High Input Impedance * High Peak Current Capability(170A) * Easy Drive by Gate Voltage C APPLICATIONS * STROBE FLASH G E ABSOLUTE MAXIMUM RATINGS Symbol Characteristics Unit Rating VCES Collector-Emitter Voltage V 400 VGE Gate - Emitter Voltage V 25 IC Continuous Collector Current Tc = 25 25 A ICM Pulsed Collector Current(1

1.7. 25n40.pdf Size:177K _utc

25N40
25N40

UNISONIC TECHNOLOGIES CO., LTD 25N40 Preliminary Power MOSFET 400V, 26A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 25N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in

Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .

 
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