Справочник MOSFET. 25N40


25N40 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 25N40

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 297 W

Предельно допустимое напряжение сток-исток (Uds): 400 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Максимально допустимый постоянный ток стока (Id): 25 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 100 ns

Выходная емкость (Cd): 390 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.11 Ohm

Тип корпуса: TO-247

Аналог (замена) для 25N40



25N40 Datasheet (PDF)

1.1. ssh25n35 ssh25n40.pdf Size:275K _samsung


1.2. ssh25n40a.pdf Size:214K _samsung


SSH25N40A Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology Ω RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 25 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 10 A (Max.) @ VDS = 400V µ Low RDS(ON) : 0.162 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol C

 1.3. sgi25n40.pdf Size:105K _samsung


N-CHANNEL IGBT SGI25N40 FEATURES I2 - PAK * High Input Impedance * High Peak Current Capability(170A) * Easy Drive by Gate Voltage C APPLICATIONS * STROBE FLASH G E ABSOLUTE MAXIMUM RATINGS Symbol Characteristics Unit Rating VCES Collector-Emitter Voltage V 400 VGE Gate - Emitter Voltage V 25 IC Continuous Collector Current Tc = 25 25 A ICM Pulsed Collector Curren

1.4. sihg25n40d.pdf Size:179K _vishay


SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) at TJ max. 450 Definition RDS(on) max. at 25 °C () VGS = 10 V 0.17 • Optimal Design Qg max. (nC) 88 - Low Area Specific On-Resistance Qgs (nC) 12 - Low Input Capacitance (Ciss) Qgd (nC) 23 - Reduced Capacitive Switching Losses Conf

 1.5. sihp25n40d.pdf Size:208K _vishay


SiHP25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS (V) at TJ max. 450 - Low Area Specific On-Resistance RDS(on) max. at 25 °C () VGS = 10 V 0.17 - Low Input Capacitance (Ciss) Qg max. (nC) 88 - Reduced Capacitive Switching Losses Qgs (nC) 12 - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) Qgd (nC) 23

1.6. 25n40.pdf Size:177K _utc


UNISONIC TECHNOLOGIES CO., LTD 25N40 Preliminary Power MOSFET 400V, 26A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 25N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse

1.7. wvm25n40.pdf Size:23K _shaanxi


Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM25N(IRF360) Power MOSFET(N-channel) Transistor Features: 1. It’s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power sou

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