12N25 Todos los transistores

 

12N25 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 12N25

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 73 W

Tensión drenaje-fuente (Vds): 250 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 80 nS

Conductancia de drenaje-sustrato (Cd): 900 pF

Resistencia drenaje-fuente RDS(on): 0.34 Ohm

Empaquetado / Estuche: TO-220_TO-252

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12N25 Datasheet (PDF)

1.1. irfu12n25dpbf.pdf Size:225K _upd

12N25
12N25

PD - 95353A IRFR12N25DPbF SMPS MOSFET IRFU12N25DPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 250V 0.26Ω 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pa

1.2. irfr12n25dpbf.pdf Size:225K _upd

12N25
12N25

PD - 95353A IRFR12N25DPbF SMPS MOSFET IRFU12N25DPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 250V 0.26Ω 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pa

 1.3. irfu12n25d.pdf Size:109K _upd

12N25
12N25

PD - 94296A IRFR12N25D SMPS MOSFET IRFU12N25D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current I

1.4. irfr12n25d.pdf Size:104K _international_rectifier

12N25
12N25

PD - 94296A IRFR12N25D SMPS MOSFET IRFU12N25D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 250V 0.26? 14A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR12N

 1.5. 12n25.pdf Size:189K _utc

12N25
12N25

UNISONIC TECHNOLOGIES CO., LTD 12N25 Power MOSFET 12A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N25 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pul

Otros transistores... NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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