12N25 Todos los transistores

 

12N25 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 12N25
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 73 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 900 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.34 Ohm
   Paquete / Cubierta: TO-220 TO-252

 Búsqueda de reemplazo de MOSFET 12N25

 

12N25 Datasheet (PDF)

 ..1. Size:189K  utc
 12n25.pdf pdf_icon

12N25

UNISONIC TECHNOLOGIES CO., LTD 12N25 Power MOSFET 12A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N25 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy

 0.1. Size:109K  international rectifier
 irfu12n25d.pdf pdf_icon

12N25

PD - 94296A IRFR12N25D SMPS MOSFET IRFU12N25D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 250V 0.26 14A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current I

 0.2. Size:225K  international rectifier
 irfr12n25dpbf irfu12n25dpbf.pdf pdf_icon

12N25

PD - 95353A IRFR12N25DPbF SMPS MOSFET IRFU12N25DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 250V 0.26 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pa

 0.3. Size:104K  international rectifier
 irfr12n25d.pdf pdf_icon

12N25

PD - 94296A IRFR12N25D SMPS MOSFET IRFU12N25D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 250V 0.26 14A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current I

MOSTRAR MÁS

Otros transistores... 15N40 , 18N40 , 20N40 , 25N40 , UF730 , UF740 , UF3N25 , UF634 , RFP50N06 , 15N25 , 18N25 , UF2N30 , 10N30 , 12N30 , UF3205 , 2N7000Z , 2N7002LL .

History: RHP030N03T100

 

 
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