All MOSFET. 12N25 Datasheet

 

12N25 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 12N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 73 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 900 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
   Package: TO-220 TO-252

 12N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

12N25 Datasheet (PDF)

 ..1. Size:189K  utc
12n25.pdf

12N25
12N25

UNISONIC TECHNOLOGIES CO., LTD 12N25 Power MOSFET 12A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N25 is an N-channel mode power MOSFET usingUTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. Italso can withstand high energy

 0.1. Size:109K  international rectifier
irfu12n25d.pdf

12N25
12N25

PD - 94296AIRFR12N25DSMPS MOSFET IRFU12N25DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters250V 0.26 14ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche VoltageD-Pak I-Pakand CurrentI

 0.2. Size:225K  international rectifier
irfr12n25dpbf irfu12n25dpbf.pdf

12N25
12N25

PD - 95353AIRFR12N25DPbFSMPS MOSFET IRFU12N25DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters250V 0.26 14Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pa

 0.3. Size:104K  international rectifier
irfr12n25d.pdf

12N25
12N25

PD - 94296AIRFR12N25DSMPS MOSFET IRFU12N25DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters250V 0.26 14ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche VoltageD-Pak I-Pakand CurrentI

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IPP80R360P7

 

 
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