Справочник MOSFET. 12N25

 

12N25 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 12N25

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 73 W

Предельно допустимое напряжение сток-исток (Uds): 250 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 12 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 80 ns

Выходная емкость (Cd): 900 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.34 Ohm

Тип корпуса: TO-220, TO-252

Аналог (замена) для 12N25

 

 

12N25 Datasheet (PDF)

1.1. irfr12n25dpbf.pdf Size:225K _upd

12N25
12N25

PD - 95353A IRFR12N25DPbF SMPS MOSFET IRFU12N25DPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 250V 0.26Ω 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pa

1.2. irfu12n25dpbf.pdf Size:225K _upd

12N25
12N25

PD - 95353A IRFR12N25DPbF SMPS MOSFET IRFU12N25DPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 250V 0.26Ω 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pa

 1.3. irfu12n25d.pdf Size:109K _upd

12N25
12N25

PD - 94296A IRFR12N25D SMPS MOSFET IRFU12N25D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current I

1.4. irfr12n25d.pdf Size:104K _international_rectifier

12N25
12N25

PD - 94296A IRFR12N25D SMPS MOSFET IRFU12N25D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 250V 0.26? 14A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR12N

 1.5. 12n25.pdf Size:189K _utc

12N25
12N25

UNISONIC TECHNOLOGIES CO., LTD 12N25 Power MOSFET 12A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N25 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pul

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