12N25 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 12N25
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 73 W
Предельно допустимое напряжение сток-исток (Uds): 250 V
Предельно допустимое напряжение затвор-исток (Ugs): 20 V
Максимально допустимый постоянный ток стока (Id): 12 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 80 ns
Выходная емкость (Cd): 900 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.34 Ohm
Тип корпуса: TO-220, TO-252
12N25 Datasheet (PDF)
1.1. irfu12n25dpbf.pdf 
Size:225K _upd
PD - 95353A IRFR12N25DPbF SMPS MOSFET IRFU12N25DPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 250V 0.26Ω 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pa
1.2. irfr12n25dpbf.pdf Size:225K _upd
PD - 95353A IRFR12N25DPbF SMPS MOSFET IRFU12N25DPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 250V 0.26Ω 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pa
1.3. irfu12n25d.pdf Size:109K _upd
PD - 94296A IRFR12N25D SMPS MOSFET IRFU12N25D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current I
1.4. irfr12n25d.pdf Size:104K _international_rectifier
PD - 94296A IRFR12N25D SMPS MOSFET IRFU12N25D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 250V 0.26? 14A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR12N
1.5. 12n25.pdf Size:189K _utc
UNISONIC TECHNOLOGIES CO., LTD 12N25 Power MOSFET 12A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N25 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pul
Другие MOSFET... GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .
Список транзисторов
Обновления
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