12N30 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 12N30
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 83 W
   Voltaje máximo drenador - fuente |Vds|: 300 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 12 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 24 nC
   Tiempo de subida (tr): 105 nS
   Conductancia de drenaje-sustrato (Cd): 900 pF
   Resistencia entre drenaje y fuente RDS(on): 0.34 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET 12N30

12N30 Datasheet (PDF)

..1. Size:158K utc
12n30.pdf

UNISONIC TECHNOLOGIES CO., LTD 12N30 Preliminary Power MOSFET 12A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N30 is an N-channel mode power MOSFET usingUTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. Italso can withstand

0.1. Size:176K ixys
ixbt12n300.pdf

High Voltage, High GainVCES = 3000VIXBT12N300BIMOSFETTM MonolithicIXBH12N300IC110 = 12ABipolar MOS TransistorVCE(sat) 3.2VTO-268 (IXBT)GSymbol Test Conditions Maximum RatingsEVCES TC = 25C to 150C 3000 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VTO-247 (IXBH)VGEM Transient 30 VIC25 TC = 25C 30 A

0.2. Size:176K ixys
ixbh12n300.pdf

0.3. Size:246K ixys
ixbt12n300hv.pdf

Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBA12N300HVBIMOSFETTM MonolithicIXBT12N300HVIC110 = 12ABipolar MOS TransistorVCE(sat) 3.2VTO-263 (IXBA)GEC (Tab)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VTO-268 (IXBT)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VVGEM Trans

0.4. Size:195K ixys
ixbf12n300.pdf

Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBF12N300BIMOSFETTM MonolithicIC90 = 12ABipolar MOS TransistorVCE(sat) 3.2V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 V1VCGR TJ = 25C to 150C, RGE = 1M 3000 V2VGES Continuous 20 V5VGEM Transie

0.5. Size:246K ixys
ixba12n300hv.pdf

0.6. Size:252K ixys
mmix4b12n300.pdf

Preliminary Technical InformationHigh Voltage, High GainMMIX4B12N300 VCES = 3000VBIMOSFETTM MonolithicIC110 = 11ABipolar MOS TransistorVCE(sat) 3.2VC2C1G1G2(Electrically Isolated Tab)E2C4 E1C3G3 G4C2G2E3E4E2C4G4E3E4C1G1E1C3Symbol Test Conditions Maximum RatingsG3VCES TC = 25C to 150C 3000 V Isolated TabE3E4VCG

0.7. Size:462K kec
kmb012n30q.pdf

SEMICONDUCTOR KMB012N30QTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,portable equipment and battery powered systems.HTD P GLFEATURES VDSS=30V, ID=12A.ALow Drain-Source ON Resistance.DIM MILLIMETERS: RDS(ON)=7m (Max.) @ VGS=10VA 5.05+0.25/-0.20: RDS(ON)=11

0.8. Size:803K kec
kmb012n30qa.pdf

SEMICONDUCTOR KMB012N30QATECHNICAL DATA N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlyHsuitable for DC/DC Converter and Battery pack..TD P GLUFEATURES AVDSS=30V, ID=12A.DIM MILLIMETERSDrain to Source On Resis

0.9. Size:324K aosemi
aot12n30.pdf

AOT12N30/AOTF12N30300V,11.5A N-Channel MOSFETGeneral Description Product Summary VDS350V@150The AOT12N30/AOTF12N30 is fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 11.5Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

0.10. Size:324K aosemi
aotf12n30.pdf

0.11. Size:463K cystek
mtn12n30fp.pdf

Spec. No. : C993FP Issued Date : 2014.12.15 CYStech Electronics Corp.Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS 300VMTN12N30FP ID@VGS=10V, TC=25C 12A RDSON(TYP)@ VGS=10V, ID=6A 248m Description The MTN12N30FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized devic

0.12. Size:261K inchange semiconductor
aot12n30.pdf

isc N-Channel MOSFET Transistor AOT12N30FEATURESDrain Current I = 11.5A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.42(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

0.13. Size:252K inchange semiconductor
aotf12n30.pdf

isc N-Channel MOSFET Transistor AOTF12N30FEATURESDrain Current I = 11.5A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.42(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

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