12N30
MOSFET. Datasheet pdf. Equivalent
Type Designator: 12N30
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 83
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 24
nC
trⓘ - Rise Time: 105
nS
Cossⓘ -
Output Capacitance: 900
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.34
Ohm
Package:
TO-252
12N30
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
12N30
Datasheet (PDF)
..1. Size:158K utc
12n30.pdf 
UNISONIC TECHNOLOGIES CO., LTD 12N30 Preliminary Power MOSFET 12A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N30 is an N-channel mode power MOSFET usingUTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. Italso can withstand
0.1. Size:176K ixys
ixbt12n300.pdf
High Voltage, High GainVCES = 3000VIXBT12N300BIMOSFETTM MonolithicIXBH12N300IC110 = 12ABipolar MOS TransistorVCE(sat) 3.2VTO-268 (IXBT)GSymbol Test Conditions Maximum RatingsEVCES TC = 25C to 150C 3000 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VTO-247 (IXBH)VGEM Transient 30 VIC25 TC = 25C 30 A
0.2. Size:176K ixys
ixbh12n300.pdf
High Voltage, High GainVCES = 3000VIXBT12N300BIMOSFETTM MonolithicIXBH12N300IC110 = 12ABipolar MOS TransistorVCE(sat) 3.2VTO-268 (IXBT)GSymbol Test Conditions Maximum RatingsEVCES TC = 25C to 150C 3000 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VTO-247 (IXBH)VGEM Transient 30 VIC25 TC = 25C 30 A
0.3. Size:246K ixys
ixbt12n300hv.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBA12N300HVBIMOSFETTM MonolithicIXBT12N300HVIC110 = 12ABipolar MOS TransistorVCE(sat) 3.2VTO-263 (IXBA)GEC (Tab)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VTO-268 (IXBT)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VVGEM Trans
0.4. Size:195K ixys
ixbf12n300.pdf
Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBF12N300BIMOSFETTM MonolithicIC90 = 12ABipolar MOS TransistorVCE(sat) 3.2V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 V1VCGR TJ = 25C to 150C, RGE = 1M 3000 V2VGES Continuous 20 V5VGEM Transie
0.5. Size:246K ixys
ixba12n300hv.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBA12N300HVBIMOSFETTM MonolithicIXBT12N300HVIC110 = 12ABipolar MOS TransistorVCE(sat) 3.2VTO-263 (IXBA)GEC (Tab)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VTO-268 (IXBT)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VVGEM Trans
0.6. Size:252K ixys
mmix4b12n300.pdf
Preliminary Technical InformationHigh Voltage, High GainMMIX4B12N300 VCES = 3000VBIMOSFETTM MonolithicIC110 = 11ABipolar MOS TransistorVCE(sat) 3.2VC2C1G1G2(Electrically Isolated Tab)E2C4 E1C3G3 G4C2G2E3E4E2C4G4E3E4C1G1E1C3Symbol Test Conditions Maximum RatingsG3VCES TC = 25C to 150C 3000 V Isolated TabE3E4VCG
0.7. Size:462K kec
kmb012n30q.pdf
SEMICONDUCTOR KMB012N30QTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,portable equipment and battery powered systems.HTD P GLFEATURES VDSS=30V, ID=12A.ALow Drain-Source ON Resistance.DIM MILLIMETERS: RDS(ON)=7m (Max.) @ VGS=10VA 5.05+0.25/-0.20: RDS(ON)=11
0.8. Size:803K kec
kmb012n30qa.pdf
SEMICONDUCTOR KMB012N30QATECHNICAL DATA N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlyHsuitable for DC/DC Converter and Battery pack..TD P GLUFEATURES AVDSS=30V, ID=12A.DIM MILLIMETERSDrain to Source On Resis
0.9. Size:324K aosemi
aot12n30.pdf
AOT12N30/AOTF12N30300V,11.5A N-Channel MOSFETGeneral Description Product Summary VDS350V@150The AOT12N30/AOTF12N30 is fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 11.5Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)
0.10. Size:324K aosemi
aotf12n30.pdf
AOT12N30/AOTF12N30300V,11.5A N-Channel MOSFETGeneral Description Product Summary VDS350V@150The AOT12N30/AOTF12N30 is fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 11.5Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)
0.11. Size:463K cystek
mtn12n30fp.pdf
Spec. No. : C993FP Issued Date : 2014.12.15 CYStech Electronics Corp.Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS 300VMTN12N30FP ID@VGS=10V, TC=25C 12A RDSON(TYP)@ VGS=10V, ID=6A 248m Description The MTN12N30FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized devic
0.12. Size:261K inchange semiconductor
aot12n30.pdf
isc N-Channel MOSFET Transistor AOT12N30FEATURESDrain Current I = 11.5A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.42(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu
0.13. Size:252K inchange semiconductor
aotf12n30.pdf
isc N-Channel MOSFET Transistor AOTF12N30FEATURESDrain Current I = 11.5A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.42(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
Datasheet: FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, STP80NF70
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.
