Аналог (замена) для 12N30

 

 

12N30 Datasheet (PDF)

1.1. mtn12n30fp.pdf Size:463K _update-mosfet

Spec. No. : C993FP Issued Date : 2014.12.15 CYStech Electronics Corp. Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 300V MTN12N30FP ID@VGS=10V, TC=25°C 12A RDSON(TYP)@ VGS=10V, ID=6A 248mΩ Description The MTN12N30FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized devic

1.2. ixbt12n300hv.pdf Size:246K _igbt

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBA12N300HV BIMOSFETTM Monolithic IXBT12N300HV IC110 = 12A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ TO-263 (IXBA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V TO-268 (IXBT) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES Continuous ± 20 V VGEM Trans

 1.3. ixbh12n300.pdf Size:176K _igbt

High Voltage, High Gain VCES = 3000V IXBT12N300 BIMOSFETTM Monolithic IXBH12N300 IC110 = 12A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings E VCES TC = 25°C to 150°C 3000 V C (Tab) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES Continuous ± 20 V TO-247 (IXBH) VGEM Transient ± 30 V IC25 TC = 25°C 30 A

1.4. mmix4b12n300.pdf Size:252K _igbt

Preliminary Technical Information High Voltage, High Gain MMIX4B12N300 VCES = 3000V BIMOSFETTM Monolithic IC110 = 11A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ C2 C1 G1 G2 (Electrically Isolated Tab) E2C4 E1C3 G3 G4 C2 G2 E3E4 E2C4 G4 E3E4 C1 G1 E1C3 Symbol Test Conditions Maximum Ratings G3 VCES TC = 25°C to 150°C 3000 V Isolated Tab E3E4 VCG

 1.5. ixbf12n300.pdf Size:195K _igbt

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBF12N300 BIMOSFETTM Monolithic IC90 = 12A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V 1 VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V 2 VGES Continuous ± 20 V 5 VGEM Transie

1.6. ixbt12n300.pdf Size:176K _igbt

High Voltage, High Gain VCES = 3000V IXBT12N300 BIMOSFETTM Monolithic IXBH12N300 IC110 = 12A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings E VCES TC = 25°C to 150°C 3000 V C (Tab) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES Continuous ± 20 V TO-247 (IXBH) VGEM Transient ± 30 V IC25 TC = 25°C 30 A

1.7. ixba12n300hv.pdf Size:246K _igbt

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBA12N300HV BIMOSFETTM Monolithic IXBT12N300HV IC110 = 12A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ TO-263 (IXBA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V TO-268 (IXBT) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES Continuous ± 20 V VGEM Trans

1.8. ixbt12n300hv.pdf Size:246K _ixys

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBA12N300HV BIMOSFETTM Monolithic IXBT12N300HV IC110 = 12A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ TO-263 (IXBA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V TO-268 (IXBT) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES Continuous ± 20 V VGEM Trans

1.9. ixbh12n300.pdf Size:176K _ixys

High Voltage, High Gain VCES = 3000V IXBT12N300 BIMOSFETTM Monolithic IXBH12N300 IC110 = 12A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings E VCES TC = 25°C to 150°C 3000 V C (Tab) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES Continuous ± 20 V TO-247 (IXBH) VGEM Transient ± 30 V IC25 TC = 25°C 30 A

1.10. mmix4b12n300.pdf Size:252K _ixys

Preliminary Technical Information High Voltage, High Gain MMIX4B12N300 VCES = 3000V BIMOSFETTM Monolithic IC110 = 11A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ C2 C1 G1 G2 (Electrically Isolated Tab) E2C4 E1C3 G3 G4 C2 G2 E3E4 E2C4 G4 E3E4 C1 G1 E1C3 Symbol Test Conditions Maximum Ratings G3 VCES TC = 25°C to 150°C 3000 V Isolated Tab E3E4 VCG

1.11. ixbf12n300.pdf Size:195K _ixys

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBF12N300 BIMOSFETTM Monolithic IC90 = 12A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V 1 VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V 2 VGES Continuous ± 20 V 5 VGEM Transie

1.12. ixbt12n300.pdf Size:176K _ixys

High Voltage, High Gain VCES = 3000V IXBT12N300 BIMOSFETTM Monolithic IXBH12N300 IC110 = 12A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings E VCES TC = 25°C to 150°C 3000 V C (Tab) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES Continuous ± 20 V TO-247 (IXBH) VGEM Transient ± 30 V IC25 TC = 25°C 30 A

1.13. ixba12n300hv.pdf Size:246K _ixys

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBA12N300HV BIMOSFETTM Monolithic IXBT12N300HV IC110 = 12A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ TO-263 (IXBA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V TO-268 (IXBT) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES Continuous ± 20 V VGEM Trans

1.14. 12n30.pdf Size:158K _utc

UNISONIC TECHNOLOGIES CO., LTD 12N30 Preliminary Power MOSFET 12A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N30 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand hig

1.15. kmb012n30q.pdf Size:462K _kec

SEMICONDUCTOR KMB012N30Q TECHNICAL DATA N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems. H T D P G L FEATURES VDSS=30V, ID=12A. A Low Drain-Source ON Resistance. DIM MILLIMETERS : RDS(ON)=7m (Max.) @ VGS=10V A 5.05+0.25/-0.20 : RDS(ON)=11

1.16. kmb012n30qa.pdf Size:803K _kec

SEMICONDUCTOR KMB012N30QA TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly H suitable for DC/DC Converter and Battery pack.. T D P G L U FEATURES A ·VDSS=30V, ID=12A. DIM MILLIMETERS ·Drain to Source On Resis

1.17. aot12n30.pdf Size:324K _aosemi

AOT12N30/AOTF12N30 300V,11.5A N-Channel MOSFET General Description Product Summary VDS 350V@150℃ The AOT12N30/AOTF12N30 is fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 11.5A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) < 0.42Ω popular AC-DC applications.By providing low RDS(on), Ciss and Crss along wi

1.18. aotf12n30.pdf Size:324K _aosemi

AOT12N30/AOTF12N30 300V,11.5A N-Channel MOSFET General Description Product Summary VDS 350V@150℃ The AOT12N30/AOTF12N30 is fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 11.5A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) < 0.42Ω popular AC-DC applications.By providing low RDS(on), Ciss and Crss along wi

1.19. mtn12n30fp.pdf Size:463K _cystek

Spec. No. : C993FP Issued Date : 2014.12.15 CYStech Electronics Corp. Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 300V MTN12N30FP ID@VGS=10V, TC=25°C 12A RDSON(TYP)@ VGS=10V, ID=6A 248mΩ Description The MTN12N30FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized devic

     

 

Список транзисторов

Обновления

MOSFET: IPP45N04S4L-08 | IPI45N04S4L-08 | IPP12CNE8NG | IPI12CNE8NG | IPD12CNE8NG | IPP08CNE8NG | IPI08CNE8NG | IPI06CN10NG | IPP054NE8NG | IPI05CNE8NG | IPP050N06NG | SWP069R10VS | SWD069R10VS | SWI069R10VS | NTHL082N65S3F |