2N7002LL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N7002LL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.225 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 25 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 7.5 Ohm

Encapsulados: SOT-23-3 TO-236

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2N7002LL datasheet

 ..1. Size:160K  utc
2n7002ll.pdf pdf_icon

2N7002LL

UNISONIC TECHNOLOGIES CO., LTD 2N7002LL Preliminary Power MOSFET 60V, 115mA N-CHANNEL POWER MOSFET DESCRIPTION 3 The UTC 2N7002LL uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate 1 voltages. This device is suitable for use as a load switch or in 2 PWM applications. FEATURES SOT-23-3 (JEDEC TO-236) * RDS(ON) = 7.5

 7.1. Size:98K  motorola
2n7002lt1.pdf pdf_icon

2N7002LL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7002LT1/D TMOS FET Transistor 2N7002LT1 3 DRAIN N Channel Enhancement Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc CASE 318 08, STYLE 21 SOT 23 (TO 236AB) Drain Gate Voltage (RGS = 1.0 M ) VDGR 60 Vdc Drain Current Con

 7.2. Size:94K  motorola
2n7002lt1rev2.pdf pdf_icon

2N7002LL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7002LT1/D TMOS FET Transistor 2N7002LT1 3 DRAIN N Channel Enhancement Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc CASE 318 08, STYLE 21 SOT 23 (TO 236AB) Drain Gate Voltage (RGS = 1.0 M ) VDGR 60 Vdc Drain Current Con

 7.3. Size:92K  onsemi
2n7002l.pdf pdf_icon

2N7002LL

2N7002L Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Features AEC Qualified http //onsemi.com PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 7.5 W @ 10 V, 60 V 115 mA 500 mA MAXIMUM RATINGS Rating Symbol Value Unit N-Channel Drain-Source Voltage VDSS 60 Vdc 3 Drain-Gate Voltage (RGS = 1.0 MW) V

Otros transistores... 12N25, 15N25, 18N25, UF2N30, 10N30, 12N30, UF3205, 2N7000Z, IRFZ24N, 2N7002Z, 2N7002ZT, UF3055, UTD3055, 12N06, 12N06Z, 15N06, 12N10