2N7002LL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

UNISONIC TECHNOLOGIES CO., LTD 2N7002LL Preliminary Power MOSFET 60V, 115mA N-CHANNEL POWER MOSFET DESCRIPTION 3The UTC 2N7002LL uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate 1voltages. This device is suitable for use as a load switch or in 2PWM applications. FEATURES SOT-23-3(JEDEC TO-236)* RDS(ON) = 7.5

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N7002LT1/DTMOS FET Transistor2N7002LT13 DRAINNChannel EnhancementMotorola Preferred Device1GATE32 SOURCE1MAXIMUM RATINGS2Rating Symbol Value UnitDrainSource Voltage VDSS 60 VdcCASE 31808, STYLE 21SOT23 (TO236AB)DrainGate Voltage (RGS = 1.0 M) VDGR 60 VdcDrain Current Con

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N7002LT1/DTMOS FET Transistor2N7002LT13 DRAINNChannel EnhancementMotorola Preferred Device1GATE32 SOURCE1MAXIMUM RATINGS2Rating Symbol Value UnitDrainSource Voltage VDSS 60 VdcCASE 31808, STYLE 21SOT23 (TO236AB)DrainGate Voltage (RGS = 1.0 M) VDGR 60 VdcDrain Current Con

2N7002LSmall Signal MOSFET60 V, 115 mA, N-Channel SOT-23Features AEC Qualifiedhttp://onsemi.com PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant7.5 W @ 10 V,60 V 115 mA500 mAMAXIMUM RATINGSRating Symbol Value UnitN-ChannelDrain-Source Voltage VDSS 60 Vdc3Drain-Gate Voltage (RGS = 1.0 MW) V

2N7002L, 2V7002LSmall Signal MOSFET60 V, 115 mA, N-Channel SOT-23Features 2V Prefix for Automotive and Other Applications Requiring Uniquehttp://onsemi.comSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable (2V7002L)V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant7.5 W @ 10 V,60 V 115 mA500 mA

2N7002L, 2V7002LSmall Signal MOSFET60 V, 115 mA, N-Channel SOT-23Features 2V Prefix for Automotive and Other Applications Requiring Site andhttp://onsemi.comChange Controls AEC Qualified - 2V7002LV(BR)DSS RDS(on) MAX ID MAX PPAP Capable - 2V7002L These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS7.5 W @ 10 V,60 V 115 mACompliant 500 mAN-Channel

FM120-M WILLASTHRU2N7002LT1Small Signal MOSFET 115 mAmps, 60 VoltsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to

BR2N7002LK2 Rev.C Oct.-2023 DATA SHEET / Descriptions SOT-23 N MOS N-CHANNEL MOSFET in a SOT-23 Plastic Package. / Features 2KV Sensitive gate trigger current and Low Holding current.ESD protected up to 2KV,HF Product. / Applications

L2N7002LT1GS-L2N7002LT1GSmall Signal MOSFET115 mAmps, 60 Volts NChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.ESD Protected:1000V2.

LESHAN RADIO COMPANY, LTD.Small Signal MOSFETL2N7002LT1G115 mAmps, 60 VoltsNChannel SOT233 We declare that the material of product 1compliance with RoHS requirements.2 ESD Protected:1000VCASE 318, STYLE 21SOT 23 (TO236AB)MAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1.0 M) VDGR 60 Vd