All MOSFET. 2N7002LL Datasheet

 

2N7002LL MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N7002LL

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.225 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 0.12 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 25 pF

Maximum Drain-Source On-State Resistance (Rds): 7.5 Ohm

Package: SOT-23-3_TO-236

2N7002LL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N7002LL Datasheet (PDF)

1.1. 2n7002ll.pdf Size:160K _utc

2N7002LL
2N7002LL

UNISONIC TECHNOLOGIES CO., LTD 2N7002LL Preliminary Power MOSFET 60V, 115mA N-CHANNEL POWER MOSFET DESCRIPTION 3 The UTC 2N7002LL uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate 1 voltages. This device is suitable for use as a load switch or in 2 PWM applications. FEATURES SOT-23-3 (JEDEC TO-236) * RDS(ON) = 7.5? @VGS

3.1. 2v7002l 2n7002l.pdf Size:90K _upd

2N7002LL
2N7002LL

2N7002L, 2V7002L Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Features • 2V Prefix for Automotive and Other Applications Requiring Site and http://onsemi.com Change Controls • AEC Qualified - 2V7002L V(BR)DSS RDS(on) MAX ID MAX • PPAP Capable - 2V7002L • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 7.5 W @ 10 V, 60 V 115 mA Compliant 500 mA N-Channel

3.2. l2n7002lt1g.pdf Size:340K _update_mosfet

2N7002LL
2N7002LL

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET L2N7002LT1G 115 mAmps, 60 Volts N–Channel SOT–23 3 • • We declare that the material of product 1 compliance with RoHS requirements. 2 • ESD Protected:1000V CASE 318, STYLE 21 SOT– 23 (TO–236AB) MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vd

 3.3. 2n7002lt1.pdf Size:98K _motorola

2N7002LL
2N7002LL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7002LT1/D TMOS FET Transistor 2N7002LT1 3 DRAIN NChannel Enhancement Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit DrainSource Voltage VDSS 60 Vdc CASE 31808, STYLE 21 SOT23 (TO236AB) DrainGate Voltage (RGS = 1.0 M?) VDGR 60 Vdc Drain Current Continuous TC = 25C(1

3.4. 2n7002lt1rev2.pdf Size:94K _motorola

2N7002LL
2N7002LL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7002LT1/D TMOS FET Transistor 2N7002LT1 3 DRAIN NChannel Enhancement Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit DrainSource Voltage VDSS 60 Vdc CASE 31808, STYLE 21 SOT23 (TO236AB) DrainGate Voltage (RGS = 1.0 M?) VDGR 60 Vdc Drain Current Continuous TC = 25C(1

 3.5. 2n7002l.pdf Size:92K _onsemi

2N7002LL
2N7002LL

2N7002L Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Features AEC Qualified http://onsemi.com PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 7.5 W @ 10 V, 60 V 115 mA 500 mA MAXIMUM RATINGS Rating Symbol Value Unit N-Channel Drain-Source Voltage VDSS 60 Vdc 3 Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vd

3.6. 2n7002lt1.pdf Size:370K _willas

2N7002LL
2N7002LL

FM120-M WILLAS THRU 2N7002LT1 Small Signal MOSFET 115 mAmps, 60 Volts FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to N

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