UTT120P06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: UTT120P06
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 192 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 160 nS
   Cossⓘ - Capacitancia de salida: 1200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: TO-220

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UTT120P06 Datasheet (PDF)

..1. Size:125K utc
utt120p06.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT120P06 Preliminary Power MOSFET 120A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT120P06 is a P-channel power MOSFET usingUTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT120P06 is suitable for low voltage and

8.1. Size:127K utc
utt120n06.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT120N06 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT120N06 is an N-channel enhancement mode Power FET using UTCs advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutati

8.2. Size:128K utc
utt120n04.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT120N04 Preliminary Power MOSFET 120A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT120N04 is an N-channel enhancement mode Power FET, it uses UTCs advanced technology to provide customers a minimum on-state resistance and high switching speed. FEATURES * RDS(ON)

9.1. Size:280K utc
utt12p10.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT12P10 Power MOSFET 100V, 12A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT12P10 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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