All MOSFET. UTT120P06 Datasheet

 

UTT120P06 Datasheet and Replacement


   Type Designator: UTT120P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 160 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO-220
 

 UTT120P06 substitution

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UTT120P06 Datasheet (PDF)

 ..1. Size:125K  utc
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UTT120P06

UNISONIC TECHNOLOGIES CO., LTD UTT120P06 Preliminary Power MOSFET 120A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT120P06 is a P-channel power MOSFET usingUTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT120P06 is suitable for low voltage and

 8.1. Size:127K  utc
utt120n06.pdf pdf_icon

UTT120P06

UNISONIC TECHNOLOGIES CO., LTD UTT120N06 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT120N06 is an N-channel enhancement mode Power FET using UTCs advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutati

 8.2. Size:128K  utc
utt120n04.pdf pdf_icon

UTT120P06

UNISONIC TECHNOLOGIES CO., LTD UTT120N04 Preliminary Power MOSFET 120A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT120N04 is an N-channel enhancement mode Power FET, it uses UTCs advanced technology to provide customers a minimum on-state resistance and high switching speed. FEATURES * RDS(ON)

 9.1. Size:280K  utc
utt12p10.pdf pdf_icon

UTT120P06

UNISONIC TECHNOLOGIES CO., LTD UTT12P10 Power MOSFET 100V, 12A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT12P10 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON)

Datasheet: URFP150 , UT12N10 , UT2N10 , 12P10 , 7P20 , UF9640 , UF9Z24 , UT2955 , 10N60 , UTT12P10 , UTT16P10 , UTT18P10 , UTT25P10 , UTT50P10 , UTT70P10 , UTT80P06 , UK4145 .

History: CEB6086 | AP60WN2K3H

Keywords - UTT120P06 MOSFET datasheet

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