UTT120P06 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: UTT120P06
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 192 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 230 nC
trⓘ - Время нарастания: 160 ns
Cossⓘ - Выходная емкость: 1200 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm
Тип корпуса: TO-220
UTT120P06 Datasheet (PDF)
utt120p06.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT120P06 Preliminary Power MOSFET 120A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT120P06 is a P-channel power MOSFET usingUTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT120P06 is suitable for low voltage and
utt120n06.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT120N06 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT120N06 is an N-channel enhancement mode Power FET using UTCs advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutati
utt120n04.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT120N04 Preliminary Power MOSFET 120A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT120N04 is an N-channel enhancement mode Power FET, it uses UTCs advanced technology to provide customers a minimum on-state resistance and high switching speed. FEATURES * RDS(ON)
utt12p10.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT12P10 Power MOSFET 100V, 12A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT12P10 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON)
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: UTT150N03
History: UTT150N03
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918