UTT10N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

UNISONIC TECHNOLOGIES CO., LTD UTT10N10 Preliminary Power MOSFET 10A, 100V N-CHANNEL MOSFET DESCRIPTION The UTC UTT10N10 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide thecustomers with a minimum on-state resistance, high switching speedand ultra low gate charge. It also can withstand high energy pulse in the avalanche and commut

UNISONIC TECHNOLOGIES CO., LTD UTT100N08 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT100N08 is an N-channel enhancement mode Power FET using UTCs advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation

UNISONIC TECHNOLOGIES CO., LTD UTT100P03 Preliminary Power MOSFET 100A, 30V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100P03 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT100P03 is suitable for low voltage an

UNISONIC TECHNOLOGIES CO., LTD UTT100N05 Preliminary Power MOSFET 100A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100N05 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customers with minimum on-state resistance and superior switchingperformance. FEATURES * RDS(ON)= 7m @ VGS=10V, ID= 50A RDS(ON)= 10m @ VGS=4.5V,

UNISONIC TECHNOLOGIES CO., LTD UTT100N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT100N06 is an N-channel enhancement mode 1Power FET using UTCs advanced technology to provide customers TO-220with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutatio

UNISONIC TECHNOLOGIES CO., LTD UTT108N03 Power MOSFET 30V, 108A N-CHANNEL POWER MOSFET DESCRIPTION As advanced N-channel level power MOSFET, the UTT108N03is produced using UTCs advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain1low gate charge for superior switching performance. TO-220 FEATURES * RDS(ON) = 6.0m