UTT10N10 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: UTT10N10
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 54 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 10 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 110 nC
Время нарастания (tr): 55 ns
Выходная емкость (Cd): 100 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.142 Ohm
Тип корпуса: TO-251 TO-252
UTT10N10 Datasheet (PDF)
utt10n10.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT10N10 Preliminary Power MOSFET 10A, 100V N-CHANNEL MOSFET DESCRIPTION The UTC UTT10N10 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide thecustomers with a minimum on-state resistance, high switching speedand ultra low gate charge. It also can withstand high energy pulse in the avalanche and commut
utt100n08.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT100N08 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT100N08 is an N-channel enhancement mode Power FET using UTCs advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation
utt100p03.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT100P03 Preliminary Power MOSFET 100A, 30V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100P03 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT100P03 is suitable for low voltage an
utt100n05.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT100N05 Preliminary Power MOSFET 100A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100N05 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customers with minimum on-state resistance and superior switchingperformance. FEATURES * RDS(ON)= 7m @ VGS=10V, ID= 50A RDS(ON)= 10m @ VGS=4.5V,
utt100n06.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT100N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT100N06 is an N-channel enhancement mode 1Power FET using UTCs advanced technology to provide customers TO-220with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutatio
utt108n03.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT108N03 Power MOSFET 30V, 108A N-CHANNEL POWER MOSFET DESCRIPTION As advanced N-channel level power MOSFET, the UTT108N03is produced using UTCs advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain1low gate charge for superior switching performance. TO-220 FEATURES * RDS(ON) = 6.0m
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Список транзисторов
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