UTT10N10. Аналоги и основные параметры

Наименование производителя: UTT10N10

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 54 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 25 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 55 ns

Cossⓘ - Выходная емкость: 100 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.142 Ohm

Тип корпуса: TO-251 TO-252

Аналог (замена) для UTT10N10

- подборⓘ MOSFET транзистора по параметрам

 

UTT10N10 даташит

 ..1. Size:148K  utc
 utt10n10.pdf pdf_icon

UTT10N10

UNISONIC TECHNOLOGIES CO., LTD UTT10N10 Preliminary Power MOSFET 10A, 100V N-CHANNEL MOSFET DESCRIPTION The UTC UTT10N10 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and ultra low gate charge. It also can withstand high energy pulse in the avalanche and commut

 9.1. Size:123K  utc
 utt100n08.pdf pdf_icon

UTT10N10

UNISONIC TECHNOLOGIES CO., LTD UTT100N08 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT100N08 is an N-channel enhancement mode Power FET using UTC s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation

 9.2. Size:126K  utc
 utt100p03.pdf pdf_icon

UTT10N10

UNISONIC TECHNOLOGIES CO., LTD UTT100P03 Preliminary Power MOSFET 100A, 30V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100P03 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT100P03 is suitable for low voltage an

 9.3. Size:123K  utc
 utt100n05.pdf pdf_icon

UTT10N10

UNISONIC TECHNOLOGIES CO., LTD UTT100N05 Preliminary Power MOSFET 100A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT100N05 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with minimum on-state resistance and superior switching performance. FEATURES * RDS(ON)= 7m @ VGS=10V, ID= 50A RDS(ON)= 10m @ VGS=4.5V,

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... UTT18P10, UTT25P10, UTT50P10, UTT70P10, UTT80P06, UK4145, UTT100N06, UTT100N08, IRFP250N, UTT120N06, UTT150N06, UTT20N10, UTT25N08, UTT30N08, UTT30N10, UTT36N10, UTT50N06